Abstract: In one aspect, a dual tunnel magnetoresistance (TMR) element structure includes a first TMR element and a second TMR element. The TMR element structure also includes a conducting layer that is disposed between the first TMR element and the second TMR element and is in direct contact with the first TMR element and the second TMR element.

Abstract: In one aspect, a tunnel magnetoresistance (TMR) element includes a magnesium oxide (MgO) layer, a cobalt iron boron (CoFeB) layer in direct contact with the MgO layer and a cobalt iron (CoFe) layer. The TMR element also includes a tantalum layer in direct contact with the CoFeB layer and the CoFe layer.

Abstract: A magnetoresistance assembly can include a substrate and a first GMR element disposed over the substrate, the first GMR element having a bottom surface and top surface. The magnetoresistance assembly can further include a first TMR element disposed over the substrate, the first TMR element having a top surface and a bottom surface, wherein a line perpendicular to and intersecting the top or bottom surface of the first TMR element intersects the first GMR element. The first GMR element and the first TMR element are in electrical communication.

Abstract: In one aspect, a bridge includes a first magnetoresistance element that includes a first set of pillars, a second magnetoresistance element that includes a second set of pillars, a third magnetoresistance element that includes a third set of pillars and a fourth magnetoresistance element that includes a fourth set of pillars. The first set of pillars and the fourth set of pillars are disposed in a first matrix and the second set of pillars and the third set of pillars are disposed in a second matrix. The second magnetoresistance element is in series with the first magnetoresistance element, the third magnetoresistance element is in parallel with the first magnetoresistance element and the fourth magnetoresistance element is in series with the third magnetoresistance element.

Abstract: In one aspect, a bridge includes a first magnetoresistance element that includes a first set of pillars, a second magnetoresistance element that includes a second set of pillars, a third magnetoresistance element that includes a third set of pillars and a fourth magnetoresistance element that includes a fourth set of pillars. The first set of pillars and the fourth set of pillars are disposed in a first matrix and the second set of pillars and the third set of pillars are disposed in a second matrix. The second magnetoresistance element is in series with the first magnetoresistance element, the third magnetoresistance element is in parallel with the first magnetoresistance element and the fourth magnetoresistance element is in series with the third magnetoresistance element.

Abstract: In one aspect, a tunnel magnetoresistance (TMR) element includes a magnesium oxide (MgO) layer, a cobalt iron boron (CoFeB) layer in direct contact with the MgO layer and a cobalt iron (CoFe) layer. The TMR element also includes a tantalum layer in direct contact with the CoFeB layer and the CoFe layer.

Abstract: In one aspect, a dual tunnel magnetoresistance (TMR) element structure includes a first TMR element and a second TMR element. The TMR element structure also includes a conducting layer that is disposed between the first TMR element and the second TMR element and is in direct contact with the first TMR element and the second TMR element.

Abstract: In one aspect, a tunnel magnetoresistance (TMR) element includes a magnesium oxide (MgO) layer, a cobalt iron boron (CoFeB) layer in direct contact with the MgO layer and a cobalt iron (CoFe) layer. The TMR element also includes a tantalum layer in direct contact with the CoFeB layer and the CoFe layer.

Abstract: A magnetoresistance structure includes a first magnetoresistance element and a second magnetoresistance element, wherein the first magnetoresistance element is formed on a surface of the second magnetoresistance element. The first magnetoresistance element comprises a free layer, a bias stack configured to bias a magnetic alignment of the free layer to a first direction in the absence of an external magnetic field, and a reference stack having a reference direction substantially orthogonal to the first direction. The magnetoresistance structure may be used to form a two- or three-dimensional magnetic field sensor.

Abstract: A magnetoresistance structure includes a first magnetoresistance element and a second magnetoresistance element, wherein the first magnetoresistance element is formed on a surface of the second magnetoresistance element. The first magnetoresistance element comprises a free layer, a bias stack configured to bias a magnetic alignment of the free layer to a first direction in the absence of an external magnetic field, and a reference stack having a reference direction substantially orthogonal to the first direction. The magnetoresistance structure may be used to form a two- or three-dimensional magnetic field sensor.

Abstract: A magnetoresistance assembly can include a substrate and a first GMR element disposed over the substrate, the first GMR element having a bottom surface and top surface. The magnetoresistance assembly can further include a first TMR element disposed over the substrate, the first TMR element having a top surface and a bottom surface, wherein a line perpendicular to and intersecting the top or bottom surface of the first TMR element intersects the first GMR element. The first GMR element and the first TMR element are in electrical communication.