Abstract: This process is for the reforming of (particularly; the aromatization of and isomerization of) alkanes to produce aromatics isonomal alkanes. Although the process and catalyst parameters can be adjusted to produce a majority of one or the other of the aromatic or isomerate products, the process is especially favorable for the production of a superior gasoline blending component having high octane blending values and containing significant amounts of both aromatics and branched paraffins. Only a small amount of cracking takes place. The process is catalytic and uses a high silica faujasite type zeolite, which contains a catalytic amount of at least one Group VIII noble metal, particularly platinum, within the pores of the zeolite.

Abstract: A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Abstract: A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Abstract: A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

Abstract: Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Abstract: In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. giThe Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

Abstract: A photovoltaic device for the conversion of light (preferably in the visible spectrum) to electrical current consists of at least two electrodes (one of which must be substantially transparent to the light), each electrode being made of different materials and in which one electrode comprises an element that has a work function (generally expressed in electron volts) greater than that of aluminum (e.g. gold or silver) and the other electrode comprises an element that has a work function equal to or less than that of aluminum (e.g., aluminum or magnesium). Sandwiched between and in contact with the electrodes is a photoresponsive organic layer comprising at least one organic compound which, in general, has the capacity to sensitize or de-sensitize silver halides, titanium dioxide, zinc oxide, cadmium sulfide, selenium and polyvinyl carbazole (examples of the organic compounds are the cyanine dyes, especially the merocyanine dyes).

Abstract: A photocell includes a metallic base electrode, a continuous, crystalline P-type semiconductive selenium layer less than about 50 microns thick, a thin tellurium layer interposed therebetween to metallurgically bond the base electrode to the selenium layer and to form an ohmic contact between the base electrode and the selenium layer, a thin N-type semiconductive cadmium selenide layer contiguous with the selenium layer and forming a photovoltaic heterojunction therebetween, a pellucid layer of at least one cadmium chalcogenide contiguous with the cadmium selenide layer and forming an ohmic contact therewith and a current collecting electrode on the cadmium chalcogenide layer. The sunlight conversion efficiency of the cell is at least about 3.0%. The efficiency can be further improved by doping the selenium layer to improve its conductivity and by providing an N-type layer of cadmium selenide and N.sup.+ cadmium oxide. This can be done by continuously varying the oxygen content of the N-type layer.