Abstract: In a method for designing and fabricating a micro-lens array, a design is finalized by varying certain features of a shadow mask, varying a distance between a source of lens-forming material and the shadow mask, and varying other parameters until the features and distances result in the formation of a micro-lens having desired shape, etc. A shadow mask in accordance with the design is then fabricated and is appropriately positioned with respect to a micro-display and a source of lens-forming material. A plume of lens-forming material is then generated under reduced pressure and which propagates toward the shadow mask, directly patterning the micro-lenses on sub-pixels of the micro-display.

Abstract: A shadow mask that includes compensation layer operative for at least partially correcting gravity-induced sag of a shadow-mask membrane is disclosed. The compensation layer is formed on a surface of the shadow-mask membrane such that the compensation layer is characterized by a residual stress that gives rise to a first bending moment in the membrane, where the first bending moment is directed in the opposite direction to a second bending moment in the membrane that is induced by the effect of gravity.

Abstract: The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

Abstract: Aspects of the present disclosure are directed to systems, method, and structures including a high-resolution shadow mask with tapered aperture/pixel openings that advantageously overcomes problems plaguing the prior art namely shadowing, sagging, and fragility.

Abstract: The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

Abstract: OLED-based displays that include pixel arrays having non-uniform sub-pixel arrangements are presented. The non-uniformity of the sub-pixel arrangements enable the pattern of light-emitting material for each sub-pixel color to be deposited through a structurally robust, high-resolution shadow mask in a single deposition. Sub-pixel arrangements in accordance with the present disclosure have larger separations between adjacent features and, therefore, shadow masks suitable for use in forming an entire same-color sub-pixel pattern have apertures that are separated by more structural material. As a result, such shadow masks have greater structural integrity than shadow masks known in the prior art. The teachings of the present disclosure are particularly well suited for the fabrication of full-color, high-resolution, side-by-side-type OLED displays that have a pixel pitch of 20 microns or less.

Abstract: A deposition system that mitigates feathering in a directly deposited pattern of organic material is disclosed. Deposition systems in accordance with the present disclosure include an evaporation source, an electrically conductive shadow mask, and an electrically conductive field plate. The source imparts a negative charge on vaporized organic molecules as they are emitted toward a target substrate. The source and substrate are biased to produce an electric field having field lines that extend normally between them. The shadow mask and field plate are located between the source and substrate and each functions as an electrostatic lens that directs the charged vapor molecules toward propagation directions aligned with the field lines as the charged vapor molecules approach and pass through them.

Abstract: A linear evaporation apparatus, system and method including a conductance chamber including a linear output section configured to emit a linear source deposition flux therethrough, an evaporative vapor communication conduit including an evaporative vapor mixing chamber and a plurality of crucible-receiving apertures at distal ends from the evaporative vapor mixing chamber, wherein the evaporative vapor mixing chamber is in communication with the conductance chamber and configured to transmit the linear source deposition flux therethrough, and a plurality of crucibles, each of the plurality of crucibles corresponding to one of the plurality of crucible-receiving apertures at the distal ends from the evaporative vapor mixing chamber, each of the plurality of crucibles configured to hold a material and heat the material to a corresponding material evaporation temperature, each of the plurality of crucibles further including a vapor pressure activated lid configured to open at a predetermined material vapor press

Abstract: A deposition system that mitigates feathering in a directly deposited pattern of organic material is disclosed. Deposition systems in accordance with the present disclosure include an evaporation source, an electrically conductive shadow mask, and an electrically conductive field plate. The source imparts a negative charge on vaporized organic molecules as they are emitted toward a target substrate. The source and substrate are biased to produce an electric field having field lines that extend normally between them. The shadow mask and field plate are located between the source and substrate and each functions as an electrostatic lens that directs the charged vapor molecules toward propagation directions aligned with the field lines as the charged vapor molecules approach and pass through them.

Abstract: A linear evaporation apparatus, system and method including a conductance chamber including a linear output section configured to emit a linear source deposition flux therethrough, an evaporative vapor communication conduit including an evaporative vapor mixing chamber and a plurality of crucible-receiving apertures at distal ends from the evaporative vapor mixing chamber, wherein the evaporative vapor mixing chamber is in communication with the conductance chamber and configured to transmit the linear source deposition flux therethrough, and a plurality of crucibles, each of the plurality of crucibles corresponding to one of the plurality of crucible-receiving apertures at the distal ends from the evaporative vapor mixing chamber, each of the plurality of crucibles configured to hold a material and heat the material to a corresponding material evaporation temperature, each of the plurality of crucibles further including a vapor pressure activated lid configured to open at a predetermined material vapor press

Abstract: The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

Abstract: An apparatus and method for performing material deposition on an active-matrix organic light emitting diode (AMOLED) display array on a substrate, includes aligning a shadow mask to a first position relative to the substrate; initially depositing a first material through the shadow mask onto the substrate at a first material deposition position relative to the first position of the aligned shadow mask and at a first deposition height; incrementing the position the shadow mask to a second position relative to the first material deposition position; and subsequently depositing one of the first material or a second material through the shadow mask onto the substrate at a second material deposition position relative to the first material deposition position, wherein the second material deposition position having an identical deposition pattern as the first material deposition position on account of the shadow mask.

Abstract: A method of active alignment of a shadow mask to a substrate includes a first alignment by moving the shadow mask and the substrate a first distance in a vertical direction, capturing a first alignment image, determining at least one of a first correction distance and a first rotational correction angle, and aligning the shadow mask and the substrate by moving the first correction distance and rotating the first rotational correction angle. The method further includes performing a first material deposition process on the substrate and continuously capturing a first series of alignment images during the generation of the first material deposition flow. During the generation of the first material deposition flow the first series of alignment images are analyzed to determine a second correction distance and a second rotational correction angle and determining whether second distance and/or rotational correction angle is greater than or equal to a predetermined value to cause a second alignment process to occur.

Abstract: A tandem Organic Light Emitting Diode (OLED) apparatus and method of fabricating the same, where the tandem OLED apparatus includes a buffer assisted charge generation layer having a junction of a p-type doped semiconductor layer and an n-type doped semiconductor layer, where a hole buffer layer and an electron buffer layer pair surrounding the junction of the p-type and n-type doped semiconductor layers. The OLED apparatus further includes a first OLED emissive layer and a second OLED emissive layer pair surrounding the buffer assisted charge generation layer, and a cathode and anode layer pair further surrounding the first and second OLED emissive layer pair.

Abstract: A direct-deposition system capable of forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. As a result, the vaporized atoms that pass through the shadow mask exhibit little or no lateral spread (i.e., feathering) after passing through its apertures and the material deposits on the substrate in a pattern that has very high fidelity with the aperture pattern of the shadow mask.

Abstract: Aspects of the present disclosure are directed to systems, method, and structures including a high-resolution shadow mask with tapered aperture/pixel openings that advantageously overcomes problems plaguing the prior art namely shadowing, sagging, and fragility.

Abstract: A method of active alignment of a shadow mask to a substrate includes a first alignment by moving the shadow mask and the substrate a first distance in a vertical direction, capturing a first alignment image, determining at least one of a first correction distance and a first rotational correction angle, and aligning the shadow mask and the substrate by moving the first correction distance and rotating the first rotational correction angle. The method further includes performing a first material deposition process on the substrate and continuously capturing a first series of alignment images during the generation of the first material deposition flow. During the generation of the first material deposition flow the first series of alignment images are analyzed to determine a second correction distance and a second rotational correction angle and determining whether second distance and/or rotational correction angle is greater than or equal to a predetermined value to cause a second alignment process to occur.

Abstract: A linear evaporation apparatus, system and method including a conductance chamber including a linear output section configured to emit a linear source deposition flux therethrough, an evaporative vapor communication conduit including an evaporative vapor mixing chamber and a plurality of crucible-receiving apertures at distal ends from the evaporative vapor mixing chamber, wherein the evaporative vapor mixing chamber is in communication with the conductance chamber and configured to transmit the linear source deposition flux therethrough, and a plurality of crucibles, each of the plurality of crucibles corresponding to one of the plurality of crucible-receiving apertures at the distal ends from the evaporative vapor mixing chamber, each of the plurality of crucibles configured to hold a material and heat the material to a corresponding material evaporation temperature, each of the plurality of crucibles further including a vapor pressure activated lid configured to open at a predetermined material vapor press

Abstract: A system and method for reducing attractive forces between a deposition mask and a substrate is provided that enables high-resolution direct deposition of a patterned layer of material on a substrate using electrostatic chucks for holding the substrate and the shadow mask. A charge-dissipating shadow mask is utilized that comprises a thin conductive layer on the surface of the membrane of the shadow mask. The conductive layer helps to dissipate the charge that accumulates on the membrane of the shadow mask, thereby reducing the attractive forces between the substrate and the shadow mask. As a result, the shadow mask and substrate can be placed in closer proximity to each other than would be possible without the charge-dissipating shadow mask, thereby reducing feathering effects and enabling higher resolution direct deposition.

Abstract: A deposition system that mitigates feathering in a directly deposited pattern of organic material is disclosed. Deposition systems in accordance with the present disclosure include an evaporation source, an electrically conductive shadow mask, and an electrically conductive field plate. The source imparts a negative charge on vaporized organic molecules as they are emitted toward a target substrate. The source and substrate are biased to produce an electric field having field lines that extend normally between them. The shadow mask and field plate are located between the source and substrate and each functions as an electrostatic lens that directs the charged vapor molecules toward propagation directions aligned with the field lines as the charged vapor molecules approach and pass through them.