Patents by Inventor Amanda J. Kirchner

Amanda J. Kirchner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Liquid crystal control structure, tip-tilt-focus optical phased array and high power adaptive optic
    Patent number: 9632345
    Abstract: A transmissive liquid crystal (LC) control structure comprising: a superstrate (44) having a first surface (44a) having a GaN HEMT structure disposed thereon to provide a conductor on the first surface of said superstrate; a substrate (42) having a first surface disposed over and spaced apart from the first surface of said superstrate and having a GaN HEMT structure (43) disposed thereon to provide a conductor on the first surface of said substrate and wherein the GaN HEMT structure on one of the superstrate and substrate surfaces are patterned into individual electrodes; a polymer network liquid crystal (PNLC) (48) disposed in the space between the first surface of said superstrate and the first surface of said substrate; and a control circuit coupled to the individual electrodes.
    Type: Grant
    Filed: May 24, 2013
    Date of Patent: April 25, 2017
    Assignee: Raytheon Company
    Inventors: Terry A. Dorschner, Irl W. Smith, Amanda J. Kirchner, Steven R. Collins, Daniel P. Resler, Linda A. Palmaccio
  • Liquid Crystal Control Structure, Tip-Tilt-Focus Optical Phased Array And High Power Adaptive Optic
    Publication number: 20150146139
    Abstract: A transmissive liquid crystal (LC) control structure comprising: a superstrate (44) having a first surface (44a) having a GaN HEMT structure disposed thereon to provide a conductor on the first surface of said superstrate; a substrate (42) having a first surface disposed over and spaced apart from the first surface of said superstrate and having a GaN HEMT structure (43) disposed thereon to provide a conductor on the first surface of said substrate and wherein the GaN HEMT structure on one of the superstrate and substrate surfaces are patterned into individual electrodes; a polymer network liquid crystal (PNLC) (48) disposed in the space between the first surface of said superstrate and the first surface of said substrate; and a control circuit coupled to the individual electrodes.
    Type: Application
    Filed: May 24, 2013
    Publication date: May 28, 2015
    Applicant: Raytheon Company
    Inventors: Irl W. Smith, Terry A. Dorschner, Amanda J. Kirchner, Steven R. Collins, Daniel P. Resler