Patents by Inventor Amanda Simpson

Amanda Simpson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electron beam lithography with a bilayer resist
    Patent number: 12248248
    Abstract: A method, apparatus, and system for processing a material stack. A hydrogen silsesquioxane layer is deposited on the material stack. A diffusion barrier layer is deposited on the hydrogen silsesquioxane layer to form a bilayer. The diffusion barrier layer comprises a material having a thickness that increases an amount of time before the hydrogen silsesquioxane layer ages to change a dose in an electron beam needed to expose the hydrogen silsesquioxane layer for a selected feature geometry with a desired width. The electron beam is directed through a surface of the bilayer to form an exposed portion of the bilayer. The electron beam applies the dose that is selected based on a pattern density of features for the material stack to have a desired level of exposure of the hydrogen silsesquioxane layer for the selected feature geometry. The hydrogen silsesquioxane layer is developed. The exposed portion remains on material stack.
    Type: Grant
    Filed: October 25, 2021
    Date of Patent: March 11, 2025
    Assignee: The Boeing Company
    Inventors: Antonio Mei, Ivan Milosavljevic, Amanda Simpson
  • Electron Beam Lithography With a Bilayer Resist
    Publication number: 20220137510
    Abstract: A method, apparatus, and system for processing a material stack. A hydrogen silsesquioxane layer is deposited on the material stack. A diffusion barrier layer is deposited on the hydrogen silsesquioxane layer to form a bilayer. The diffusion barrier layer comprises a material having a thickness that increases an amount of time before the hydrogen silsesquioxane layer ages to change a dose in an electron beam needed to expose the hydrogen silsesquioxane layer for a selected feature geometry with a desired width. The electron beam is directed through a surface of the bilayer to form an exposed portion of the bilayer. The electron beam applies the dose that is selected based on a pattern density of features for the material stack to have a desired level of exposure of the hydrogen silsesquioxane layer for the selected feature geometry. The hydrogen silsesquioxane layer is developed. The exposed portion remains on material stack.
    Type: Application
    Filed: October 25, 2021
    Publication date: May 5, 2022
    Inventors: Antonio Mei, Ivan Milosavljevic, Amanda Simpson
  • NANOSTRUCTURE COMPOSITE BATTERIES AND METHODS OF MAKING SAME FROM NANOSTRUCTURE COMPOSITE SHEETS
    Publication number: 20120315539
    Abstract: A secondary battery capable of being charged after discharging is provided. The battery includes a positive electrode, made from a sheet of carbon nanotubes infiltrated with mixed metal oxides, and a negative electrode made from a sheet of carbon nanotubes with silicon or germanium particles.
    Type: Application
    Filed: February 7, 2012
    Publication date: December 13, 2012
    Applicant: Nanocomp Technologies, Inc.
    Inventors: David S. Lashmore, Amanda Simpson