Abstract: A semiconductor device includes a lower substrate, a semiconductor element mounted on an upper surface of the lower substrate, an upper substrate disposed on an upper surface of the semiconductor element, an encapsulation resin disposed between the lower substrate and the upper substrate and encapsulating the semiconductor element, a wiring layer disposed on an upper surface of the upper substrate, and a covering resin formed from a material having a coefficient of thermal expansion similar to a coefficient of thermal expansion of the encapsulation resin. The covering resin is disposed on the upper surface of the upper substrate and covers a side surface of the wiring layer.

Abstract: A semiconductor device includes a lower substrate, a semiconductor element mounted on an upper surface of the lower substrate, an upper substrate disposed on an upper surface of the semiconductor element, an encapsulation resin disposed between the lower substrate and the upper substrate and encapsulating the semiconductor element, a wiring layer disposed on an upper surface of the upper substrate, and a covering resin formed from a material having a coefficient of thermal expansion similar to a coefficient of thermal expansion of the encapsulation resin. The covering resin is disposed on the upper surface of the upper substrate and covers a side surface of the wiring layer.