Abstract: Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.

Abstract: A system for modulating a terahertz beam includes a multiferroic nanoparticle heterostructure through which a terahertz beam can be propagated, and means for applying an external direct current (DC) magnetic field to the multiferroic nanoparticle heterostructure and the terahertz beam propagating through it, wherein application of the DC magnetic field modulates one or both of an amplitude and a phase of the terahertz beam.

Abstract: Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.

Abstract: Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.

Abstract: A system for modulating a terahertz beam includes a multiferroic nanoparticle heterostructure through which a terahertz beam can be propagated, and means for applying an external direct current (DC) magnetic field to the multiferroic nanoparticle heterostructure and the terahertz beam propagating through it, wherein application of the DC magnetic field modulates one or both of an amplitude and a phase of the terahertz beam.

Abstract: Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.

Abstract: Process for producing novel fluxed PZT dielectric ceramic compositions having sintering temperatures below about 1000.degree., so as to be non-reactive with electrode layers when co-fired therewith. The PZT is sintered with an effective amount of an eutectic mixture of CuO and an oxide of an alkaline earth metal, preferably barium oxide and/or strontium oxide, to reduce the sintering temperature of the PZT composition below about 1000.degree. C. Dopant such as manganese oxide may be added to reduce the dielectric losses.