Abstract: A method for analyzing the crystal structure of a polycrystalline semiconductor material is described. According to one embodiment, the method includes exciting the material to make the material emit a luminescent signal, detecting, at each point of a mesh in a preset spatial region of the material, the luminescent signal at a variable polarization angle, in a frequency band of width greater than or equal to the width of the bandgap of the material, estimating, at each point of the mesh in the preset spatial region of the material, from the signal detected for said point of the mesh, a data characteristic of the modulation of the luminescent signal, modelled by a sum of sine waves, as a function of the polarization angle, and representing the characteristic data over all of the points of the mesh in the preset spatial region.

Abstract: A method for analysing the crystal structure of a polycrystalline semiconductor material is described. According to one embodiment, the method includes exciting the material to make the material emit a luminescent signal, detecting, at each point of a mesh in a preset spatial region of the material, the luminescent signal at a variable polarization angle, in a frequency band of width greater than or equal to the width of the bandgap of the material, estimating, at each point of the mesh in the preset spatial region of the material, from the signal detected for said point of the mesh, a data characteristic of the modulation of the luminescent signal, modelled by a sum of sine waves, as a function of the polarization angle, and representing the characteristic data over all of the points of the mesh in the preset spatial region.