Patents by Inventor Amer Mohammad Khaled Samman

Amer Mohammad Khaled Samman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6474139
    Abstract: A combustible gas sensor diode including a SiC semiconductor substrate, on top of which an AlN layer and a catalytic metal “gate” electrode are deposited is disclosed. The combustible gas sensor diode can be operated in either a D.C. forward conduction mode or an A.C. reverse bias mode. Methods of detecting combustibles in both D.C. and A.C. modes are further disclosed.
    Type: Grant
    Filed: February 6, 2002
    Date of Patent: November 5, 2002
    Assignee: Ford Global Technologies, Inc.
    Inventors: Amer Mohammad Khaled Samman, Samuel Admassu Gebremariam, Lajos Rimai
  • Publication number: 20020092342
    Abstract: A combustible gas sensor diode including a SiC semiconductor substrate, on top of which an AlN layer and a catalytic metal “gate” electrode are deposited is disclosed. The combustible gas sensor diode can be operated in either a D.C. forward conduction mode or an A.C. reverse bias mode. Methods of detecting combustibles in both D.C. and A.C. modes are further disclosed.
    Type: Application
    Filed: February 6, 2002
    Publication date: July 18, 2002
    Applicant: Ford Global Technologies, Inc.
    Inventors: Amer Mohammad Khaled Samman, Samuel Admassu Gebremariam, Lajos Rimai
  • Patent number: 6418784
    Abstract: A substrate covered with an insulating layer and a catalytic gate electrode 26 disposed on the insulating layer. The catalytic gate electrode 26 has a first end having a first contact pad 30 and a second end having a second contact pad 32. A meander 28 is placed between the first contact and the second contact. A third contact pad 24 is coupled to the underside of the substrate 22. The temperature is measured between the first contact pad 30 and second contact pad 32 while sensor's response to gas concentration is sensed between the gate electrode 26 and the third contact 24.
    Type: Grant
    Filed: October 8, 1999
    Date of Patent: July 16, 2002
    Assignee: Ford Global Technologies, Inc.
    Inventors: Amer Mohammad Khaled Samman, Samuel Admassu Gebremariam, Lajos Rimai
  • Patent number: 6378355
    Abstract: A combustible gas sensor diode including a SiC semiconductor substrate, on top of which an AlN layer and a catalytic metal “gate” electrode are deposited is disclosed. The combustible gas sensor diode can be operated in either a D.C. forward conduction mode or an A.C. reverse bias mode. Methods of detecting combustibles in both D.C. and A.C. modes are further disclosed.
    Type: Grant
    Filed: June 25, 2001
    Date of Patent: April 30, 2002
    Assignee: Ford Global Technologies, Inc.
    Inventors: Amer Mohammad Khaled Samman, Samuel Admassu Gebremariam, Lajos Rimai
  • Publication number: 20010032493
    Abstract: A combustible gas sensor diode including a SiC semiconductor substrate, on top of which an AlN layer and a catalytic metal “gate” electrode are deposited is disclosed. The combustible gas sensor diode can be operated in either a D.C. forward conduction mode or an A.C. reverse bias mode. Methods of detecting combustibles in both D.C. and A.C. modes are further disclosed.
    Type: Application
    Filed: June 25, 2001
    Publication date: October 25, 2001
    Applicant: Ford Global Technologies, Inc.
    Inventors: Amer Mohammad Khaled Samman, Samuel Admassu Gebremariam, Lajos Rimai
  • Patent number: 6298710
    Abstract: A combustible gas sensor diode including a SiC semiconductor substrate, on top of which an AlN layer and a catalytic metal “gate” electrode are deposited is disclosed. The combustible gas sensor diode can be operated in either a D.C. forward conduction mode or an A.C. reverse bias mode. Methods of detecting combustibles in both D.C. and A.C. modes are further disclosed.
    Type: Grant
    Filed: February 20, 1998
    Date of Patent: October 9, 2001
    Assignee: Ford Global Technologies, Inc.
    Inventors: Amer Mohammad Khaled Samman, Samuel Admassu Gebremariam, Lajos Rimai
  • Patent number: 6297138
    Abstract: A method for depositing a metal film onto the semiconductor substrate and insulator of a MOS sensor is provided. The method utilizes a laser ablation technique to deposit metal films having a desired thickness and roughness to enhance the reliability and sensitivity of a MOS sensor to combustible gases.
    Type: Grant
    Filed: January 12, 1998
    Date of Patent: October 2, 2001
    Assignee: Ford Global Technologies, Inc.
    Inventors: Lajos Rimai, Amer Mohammad Khaled Samman, Samuel Admassu Gebremariam