Abstract: A method and apparatus for reading bitcell data stored in a content addressable memory (CAM) includes controlling a first compare line of a first column of an array of bitcells to a first logic state while controlling a second compare line of the first column as well as first and second compare lines of each of the other columns of the array to a second logic state during a second mode of operation, in order to provide the bitcell data stored in at least one bitcell of the first column to a respective match line. The method also includes reading the bitcell data on the respective match line.

Abstract: A register file circuit according to some examples of the disclosure may include a memory cell, a header transistor circuit, and a driver circuit. The header transistor circuit may include one or more PFET headers in series with the PFETs of the memory cell with the gate of the PFET header for the row being written being controlled with a pulse write signal from the driver circuit. In some examples of the disclosure, the header transistor circuit may include an NFET pull-down inserted between a virtual-vdd and ground to discharge the virtual-vdd node reducing the contention during a write operation and a clamping NFET in parallel with the PFET header to clamp the virtual-vdd node to slightly below the threshold voltage of the pull-up PFET in the memory cell to ensure the pull-up PFET is barely off and prevent the virtual-vdd node from discharging all the way to ground.