Abstract: Specific probe device configurations and processes for producing those probe configurations. A Probe device may include a silicon nitride cantilever of controlled thickness, holding a silicon probe tip of controllable sharpness. The probe tip may also be coated with a silicon nitride layer also of controllable thickness. An optional silicon reflective pad may also be formed as a base for the tip. The probe device is produced by forming a tip, optionally with base pad, on a silicon wafer, depositing a silicon nitride film on the wafer, etching the silicon nitride film to form a cantilever holding the tip/pad, selectively etching the silicon nitride film for separately controllable thickness both for the cantilever and the coated tip, and then etching away the backside silicon to leave a free silicon nitride cantilever holding a silicon nitride coated tip.

Abstract: A scanning probe assembly having a nanometer sensor element defined at a tip apex and its method of fabrication using micro-electromechanical systems (MEMS) processing techniques. The assembly comprises a probe body, a cantilever extending outward, and a hollow tip at the end of the cantilever. A first conductive material is disposed on the hollow tip, followed by a dielectric layer thus embedding the conductive layer. A nanometer hole is milled through the tip, first conductor and dielectric materials. A metal sensor element is deposited by means of electrochemical deposition in the through-hole. A second conductor is deposited on a lower layer. The first and second conductors form electrical connections to the sensor element in the tip. The intra-tip metal, in combination with other layers, may form a thermocouple, thermistor, Schottky diode, ultramicroelectrode, or Hall Effect sensor, and used as a precursor to grow spikes such a nanotubes.

Abstract: A scanning probe assembly having a nanometer sensor element defined at a tip apex and its method of fabrication using micro-electromechanical systems (MEMS) processing techniques. The assembly comprises a probe body, a cantilever extending outward, and a hollow tip at the end of the cantilever. A first conductive material is disposed on the hollow tip, followed by a dielectric layer thus embedding the conductive layer. A nanometer hole is milled through the tip, first conductor and dielectric materials. A metal sensor element is deposited by means of electrochemical deposition in the through-hole. A second conductor is deposited on a lower layer. The first and second conductors form electrical connections to the sensor element in the tip. The intra-tip metal, in combination with other layers, may form a thermocouple, thermistor, Schottky diode, ultramicroelectrode, or Hall Effect sensor, and used as a precursor to grow spikes such a nanotubes.

Abstract: A probe assembly for an instrument and a method of manufacture includes a substrate and a cantilever having a length that is independent of typical alignment error during fabrication. In one embodiment, the probe assembly includes a buffer section interposed between the substrate and the cantilever. The cantilever extends from the buffer section and a portion of the buffer section extends beyond an edge of the substrate. The portion of the buffer section is more stiff than the cantilever. The corresponding method of producing the probe assembly facilitates batch fabrication without compromising probe performance.

Abstract: A cantilever-tip assembly for atomic force microscopy (AFM) or other scanning probe microscopy and its method of making based on micro-electromechanical systems (MEMS). Two crystalline silicon wafers and attached oxide and nitride layers are bonded together across an intermediate dielectric layer. A thin cantilever with a tetrahedral silicon probe tip at its distal end are formed in one wafer by anisotropic etching of silicon and a support structure is formed in the other wafer to support the proximal end of the cantilever preferably having an inclined face formed by anisotropic silicon etching. The cantilever may be silicon or silicon nitride.

Abstract: The present invention is directed to scanning probes in which a cantilever contacts a stylus via an integrated stylus base pad, and methods for fabricating such probes. The probe offer many advantages over other types of scanning probes with respect to eliminating the need for a soft, reflective coating in some applications and providing for the simple fabrication of sharp stylus tips, flexibility with respect to functionalizing the tip, and minimal thermal drift due to reduced bimorph effect. The advantage of these features facilitates the acquisition of high resolution images of samples in general, and particularly in liquids.

Abstract: A cantilever-tip assembly for atomic force microscopy (AFM) or other scanning probe microscopy and its method of making based on micro-electromechanical systems (MEMS). Two crystalline silicon wafers and attached oxide and nitride layers are bonded together across an intermediate dielectric layer. A thin cantilever with a tetrahedral silicon probe tip at its distal end are formed in one wafer by anisotropic etching of silicon and a support structure is formed in the other wafer to support the proximal end of the cantilever preferably having an inclined face formed by anisotropic silicon etching. The cantilever may be silicon or silicon nitride.

Abstract: An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.

Abstract: An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.

Abstract: The present invention is directed to scanning probes in which a cantilever contacts a stylus via an integrated stylus base pad, and methods for fabricating such probes. The probe offer many advantages over other types of scanning probes with respect to eliminating the need for a soft, reflective coating in some applications and providing for the simple fabrication of sharp stylus tips, flexibility with respect to functionalizing the tip, and minimal thermal drift due to reduced bimorph effect. The advantage of these features facilitates the acquisition of high resolution images of samples in general, and particularly in liquids.

Abstract: An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.

Abstract: A probe assembly for an instrument and a method of manufacture includes a substrate and a cantilever having a length that is independent of typical alignment error during fabrication. In one embodiment, the probe assembly includes a buffer section interposed between the substrate and the cantilever. The cantilever extends from the buffer section and a portion of the buffer section extends beyond an edge of the substrate. The portion of the buffer section is more stiff than the cantilever. The corresponding method of producing the probe assembly facilitates batch fabrication without compromising probe performance.

Abstract: An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.

Abstract: Probes for use in a scanning probe microscope and methods of manufacturing such probes. Each probe includes a probe tip having a substantially vertical sidewall formed by an anisotropic etching process and a flared post underlying the probe tip that is formed by an etching process that is not anisotropic. A source gas comprising a bromine-containing gas and an oxygen-containing gas is used to etch the probe tip and flared post of the probe in a batch process. The probe tips may be qualified using any suitable criterion for use by a customer in an atomic force microscope without individual inspection.

Abstract: A method and apparatus for manipulating the surface of a sample including a cantilever, a first tip mounted on the cantilever, and a second tip mounted on the cantilever, the first and the second tip being configured to combine to form an imaging probe and to separate to form a manipulation probe. The first and second tips are configured to form a first position characterized in that the tips combine to form an imaging tip and the first and the second tip are configured to form a second position characterized in that the tips separate to manipulate particles on a surface of a sample. The tips can be configured to form the first position when a voltage is applied across the tips, and preferable extend downwardly from the cantilever substantially perpendicular thereto.

Abstract: This invention provides a sensor to measure physical and/or chemical properties of viscous fluids. The sensor is based on microfabricated piezoresistive cantilevers. Deflection of these cantilevers is read out using, e.g., a wheatstone bridge to amplify and convert the deflection into a voltage output. The cantilevers and/or tips attached thereto, can be chemically or physically modified using reagents specific to interact with analytes to be detected in the fluid. The cantilevers can be integrated in a microfluidic system for easy fluid handling and the ability to manage small quantities of fluids.

Abstract: A characterizer for determining the shape of a probe tip for an atomic force microscope and methods of fabricating and using the characterizer. The characterizer includes a micromachined crystalline structure with opposed edges separated by a width suitable for characterizing a dimension of the probe tip. At least one of the opposed edges overhangs an undercut region of the micromachined crystalline structure by an overhang distance that is greater than one third of the width. The probe tip is scanned across the edges of the characterizer for shape determination. The characterizer is formed by serially deep reactive ion etching and anisotropic etching (100) single crystal silicon. The opposed edges may be oxidation sharpened for use in profiling an end or side of the probe tip.

Abstract: A characterizer for determining the shape of a probe tip for an atomic force microscope and methods of fabricating and using the characterizer. The characterizer includes a micromachined crystalline structure with opposed edges separated by a width suitable for characterizing a dimension of the probe tip. At least one of the opposed edges overhangs an undercut region of the micromachined crystalline structure by an overhang distance that is greater than one third of the width. The probe tip is scanned across the edges of the characterizer for shape determination. The characterizer is formed by serially deep reactive ion etching and anisotropic etching (100) single crystal silicon. The opposed edges may be oxidation sharpened for use in profiling an end or side of the probe tip.

Abstract: A method and apparatus for manipulating the surface of a sample including a cantilever, a first tip mounted on the cantilever, and a second tip mounted on the cantilever, the first and the second tip being configured to combine to form an imaging probe and to separate to form a manipulation probe. The first and second tips are configured to form a first position characterized in that the tips combine to form an imaging tip and the first and the second tip are configured to form a second position characterized in that the tips separate to manipulate particles on a surface of a sample. The tips can be configured to form the first position when a voltage is applied across the tips, and preferable extend downwardly from the cantilever substantially perpendicular thereto.

Abstract: A probe assembly for an instrument and a method of manufacture includes a substrate and a cantilever having a length independent of typical alignment error during fabrication. In one embodiment, the probe assembly includes a buffer section interposed between the substrate and the cantilever. The cantilever extends from the buffer section and a portion of the buffer section extends beyond an edge of the substrate. The portion of the buffer section is more stiff than the cantilever. The corresponding method of producing the probe assembly facilitates batch fabrication without compromising probe performance.