Abstract: A resource-sharing system enables multiple work areas to share an energy resource on a real-time, asynchronous basis in order to perform manufacturing processes. A specific embodiment involves a communication and control structure for a distributed laser processing system wherein the work areas, in communication with a cell controller via a cell-level LAN, share high-power lasers through beam multiplexers and optical fibers. The cell controller, typically in communication with a factory information system computer over a factory-level network, receives information relating to processes to be performed in the workareas, and makes this information available to the workareas as a node in the cell-level LAN. With such an arrangement, tools requiring the laser energy within the work areas may be controlled in real time by their associated station controllers, as cell controller need only be responsible for coordinating more global activities.

Abstract: A node switch useful for resource sharing within a network environment incorporating computer control uses opto-electronic isolators and switching devices to route bidirectional communications between a common port and at least two I/O ports on an asynchronous basis. Separate power supplies are used for the ports and the internal circuitry, thus providing signal matching between disparate pieces of equipment. Multiple node switches may be cascaded or "daisy-chained" to provide for flexible switching, depending upon the application.

Abstract: A conductive interconnection (27) on a substrate (11) is made by applying a metal-organic compound (25) to the substrate, exposing the metal-organic compound to laser beam radiation (14) in which the power level has been ramped to some specific level and, thereafter, moving the substrate with respect to the laser beam. The movement of the substrate is at an applied rate of speed such that the temperature within the metal-organic compound impinged by the laser beam is properly ramped with respect to time. This leaves a dependable metal deposition (27) which may be monitored through a viewing system (21).

Abstract: This disclosure is directed to a method of forming an interlevel dielectric glass layer (16) on a semiconductor device, the layer having a plurality of feed-through apertures (17--17) therein. A CW laser beam (29) is continuously raster scanned over the surface of the glass layer (16) to reflow the layer to densify the material and form a smooth surface topography about the apertures (17--17).

Abstract: An energy beam, such as the coherent output of a laser, is applied to a thin film in a controlled manner, preferably as a pluse. The length of the pulse is regulated to form a tapered aperture in the film. The duration, energy and wavelength of the beam pulse with respect to the thickness, thermal properties and optical properties of the film are such that impingement of the beam pulse on a first surface of the film results in controlled removal of a small amount of the film. The pulse is terminated before the temperature gradient between the first film surface and a second film surface (the film's thickness being bounded by the surfaces) is zero. Plural pulses may be serially applied to form the tapered aperture to a desired depth.Typically, the thin films range in thickness from several hundred angstroms (.about.400A.) to about 10,000A. and may be dielectrics (SiO.sub.2, Si.sub.3 N.sub.4, Ta.sub.2 O.sub.5), metals (Au, Al, Ta, etc.) and silicon.