Abstract: A method includes receiving first spectrograph data corresponding to a first material type, receiving second spectrograph data correspond to a second material type different than the first material type The method further includes generating first ratio data by comparing respective values of the first and second spectrograph data, generating a first drift value using the first ratio data, and performing one or more corrective actions based on a determination that the first drift value exceeds a first threshold.

Abstract: A method includes loading a substrate on a chuck, determining one or more offset values representing an offset between a center of the chuck and a center of the substrate by performing a first alignment verification operation which includes capturing first image data corresponding to an edge of the substrate. The method further includes determining an orientation of a spatial arrangement of pattern features disposed on the substrate by performing, using the one or more offset values, a second alignment verification operation includes capturing second image data corresponding to a first plurality of alignment marks disposed on the substrate, and performing, using the one or more offset values and the orientation of the spatial arrangement of pattern features disposed on the substrate, a reflectometry operation to verify quality of one or more substrate characteristics.

Abstract: A device includes a calibration target attached to a chuck. The device also includes a camera fixed in a first position. The device also includes a reflectometer fixed in a second position. The device also includes one or more processing devices. The device also includes memory storing instructions that, when executed by the one or more processing devices, cause the device to move the chuck to a third position, capture an image using the camera, determine, using the image, a first actual position of the calibration target, determine a first offset value corresponding to a difference between a first expected position of the calibration target and the first actual position of the calibration target, and verify a calibration of the reflectometer using one or more of the first expected position of the calibration target or the first actual position of the calibration target.

Abstract: Full wafer in-situ metrology chambers and methods of use are described. The metrology chambers include a substrate support and a sensor bar that are rotatable relative to each other. The sensor bar includes a plurality of sensors at different radii from a central axis.

Abstract: Full wafer in-situ metrology chambers and methods of use are described. The metrology chambers include a substrate support and a sensor bar that are rotatable relative to each other. The sensor bar includes a plurality of sensors at different radii from a central axis.

Abstract: Substrate carrier apparatus having a hard mask are disclosed herein. In some embodiments, a substrate carrier apparatus includes a carrier body having a support surface to support a substrate; and a mask assembly disposed above the support surface. The mask assembly includes an annular frame disposed atop the support surface; and a hard mask coupled to and disposed within the annular frame above the support surface, wherein the hard mask includes one or more openings arranged in a predetermined pattern and disposed through the hard mask, and wherein the hard mask includes a plurality of spacer elements extending from a bottom surface of the hard mask.

Abstract: Substrate carrier apparatus having a hard mask are disclosed herein. In some embodiments, a substrate carrier apparatus includes a carrier body having a support surface to support a substrate; and a mask assembly disposed above the support surface. The mask assembly includes an annular frame disposed atop the support surface; and a hard mask coupled to and disposed within the annular frame above the support surface, wherein the hard mask includes one or more openings arranged in a predetermined pattern and disposed through the hard mask, and wherein the hard mask includes a plurality of spacer elements extending from a bottom surface of the hard mask.

Abstract: A method and apparatus for inspecting a reticle measures line widths using an inspection tool that images the reticle and compares the image with a design database to detect errors in real time. The differences between the line widths of patterns on the reticle and the design database are stored during the inspection procedure. The difference (or “bias”) information is then processed off-line to create a map of all the local line-width deviation values (i.e., bias) of every feature on the reticle. The resultant local bias map can be used as a feedback mechanism to improve the reticle manufacturing process, as a “go/no go” criteria for the validity of the reticle, and as a standard report shipped together with the mask to the wafer fabrication facility, where it can be used as a yield-enhancing tool.

Abstract: A method and apparatus for inspecting a reticle measures line widths using an inspection tool that images the reticle and compares the image with a design database to detect errors in real time. The differences between the line widths of patterns on the reticle and the design database are stored during the inspection procedure. The difference (or “bias”) information is then processed off-line to create a map of all the local line-width deviation values (i.e., bias) of every feature on the reticle. The resultant local bias map can be used as a feedback mechanism to improve the reticle manufacturing process, as a “go/no go” criteria for the validity of the reticle, and as a standard report shipped together with the mask to the wafer fabrication facility, where it can be used as a yield-enhancing tool.

Abstract: A method and apparatus for inspecting a reticle measures line widths using an inspection tool that images the reticle and compares the image with a design database to detect errors in real time. The differences between the line widths of patterns on the reticle and the design database are stored during the inspection procedure. The difference (or “bias”) information is then processed off-line to create a map of all the local line-width deviation values (i.e., bias) of every feature on the reticle. The resultant local bias map can be used as a feedback mechanism to improve the reticle manufacturing process, as a “go/no go” criteria for the validity of the reticle, and as a standard report shipped together with the mask to the wafer fabrication facility, where it can be used as a yield-enhancing tool.

Abstract: A method and apparatus for inspecting a reticle measures line widths using an inspection tool that images the reticle and compares the image with a design database to detect errors in real time. The differences between the line widths of patterns on the reticle and the design database are stored during the inspection procedure. The difference (or “bias”) information is then processed off-line to create a map of all the local line-width deviation values (i.e., bias) of every feature on the reticle. The resultant local bias map can be used as a feedback mechanism to improve the reticle manufacturing process, as a “go/no go” criteria for the validity of the reticle, and as a standard report shipped together with the mask to the wafer fabrication facility, where it can be used as a yield-enhancing tool.