Abstract: A method for sensing gas by a gas sensing device, the method may include generating, by a semiconductor temperature sensing element that is spaced apart from a gas reactive element and is thermally coupled to the gas reactive element, detection signals that are indicative of a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale; and processing, by a readout circuit of the gas sensing device, the detection signals to provide information about a gas that affected the temperature of the gas reactive element.

Abstract: There is provided a gas sensing device for sensing a certain gas that is associated with a certain spectral band, the gas sensing device may include a passive gas sensor that is configured to generate passive gas sensor detection signals that are responsive to the certain spectral band; a passive dummy sensor that is configured to generate passive dummy sensor detection signals that are indifferent to the certain spectral hand; and at least one circuit that is configured to detect a presence or absence of the certain gas within a certain volume that is located within the fields of view of the passive gas sensor and the passive dummy sensor based on a comparison between the passive gas sensor detection signals and the passive dummy sensor detection signals.

Abstract: A method for sensing gas by a gas sensing device, the method may include generating, by a semiconductor temperature sensing element that is spaced apart from a gas reactive element and is thermally coupled to the gas reactive element, detection signals that are indicative of a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale; and processing, by a readout circuit of the gas sensing device, the detection signals to provide information about a gas that affected the temperature of the gas reactive element.

Abstract: A method for manufacturing a thermal sensor, the method may include forming, using ion etching, one or more first holes that pass through (a) an initial layer, (a) a first oxide layer, (c) a first semiconductor substrate; filling the one or more first holes with oxide to form supporting elements; fabricating one or more thermal semiconductor sensing elements; forming one or more second holes in the one or more upper layers and the first oxide layer; applying an isotropic etching process to remove the first semiconductor substrate and expose the supporting elements to provide a suspended first oxide layer.

Abstract: There is provided a gas sensing device for sensing a certain gas that is associated with a certain spectral band, the gas sensing device may include a passive gas sensor that is configured to generate passive gas sensor detection signals that are responsive to the certain spectral band; a passive dummy sensor that is configured to generate passive dummy sensor detection signals that are indifferent to the certain spectral band; and at least one circuit that is configured to detect a presence or absence of the certain gas within a certain volume that is located within the fields of view of the passive gas sensor and the passive dummy sensor based on a comparison between the passive gas sensor detection signals and the passive dummy sensor detection signals.

Abstract: A gas sensing device that includes a (a) gas reactive element that has a gas dependent temperature parameter; and (b) a semiconductor temperature sensing element that is spaced apart from the gas reactive element and is configured to sense radiation emitted from the gas reactive element and generate detection signals that are responsive to a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale.

Abstract: A method for manufacturing a thermal sensor, the method may include forming, using ion etching, one or more first holes that pass through (a) an initial layer, (a) a first oxide layer, (c) a first semiconductor substrate; filling the one or more first holes with oxide to form supporting elements; fabricating one or more thermal semiconductor sensing elements; forming one or more second holes in the one or more upper layers and the first oxide layer; applying an isotropic etching process to remove the first semiconductor substrate and expose the supporting elements to provide a suspended first oxide layer.

Abstract: A gas sensing device that includes a (a) gas reactive element that has a gas dependent temperature parameter; and (b) a semiconductor temperature sensing element that is spaced apart from the gas reactive element and is configured to sense radiation emitted from the gas reactive element and generate detection signals that are responsive to a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale.

Abstract: A device that may include a narrowband filter that is arranged to pass radiation within a main signal waveband in which a muzzle flash is expected to include energy above a first energy threshold; a first single photon avalanche diode (SPAD) arranged to detect photons of the main signal waveband during different points in time and to output first digital detection signals representative of the photons of the main signal waveband; and a signal processor that is arranged to receive the first digital detection signals and to detect, in response to at least the first digital detection signals, the muzzle flash.

Abstract: A device that may include a narrowband filter that is arranged to pass radiation within a main signal waveband in which a muffle flash is expected to include energy above a first energy threshold; a first single photon avalanche diode (SPAD) arranged to detect photons of the main signal waveband during different points in time and to output first digital detection signals representative of the photons of the main signal waveband; and a signal processor that is arranged to receive the first digital detection signals and to detect, in response to at least the first digital detection signals, the muffle flash.