Abstract: A light emitting device having first, second and third dimensions that are orthogonal may include a light emitting semiconductor device configured to emit light via a first surface in a plane formed by the first and second dimensions. The light emitting device may further include a wavelength converting structure disposed on the first surface of the light emitting semiconductor device, the wavelength converting structure extending beyond the light emitting semiconductor device in the first dimension and the light emitting semiconductor device extending beyond the wavelength converting structure in the second dimension. The light emitting device may further include one or more optical extraction features in at least one gap formed by the wavelength converting structure extending beyond the light emitting semiconductor structure in the first dimension and/or formed by the light emitting semiconductor structure extending beyond the wavelength converting structure in the second dimension.

Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.

Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.

Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.

Abstract: A light emitting device having first, second and third dimensions that are orthogonal may include a light emitting semiconductor device configured to emit light via a first surface in a plane formed by the first and second dimensions. The light emitting device may further include a wavelength converting structure disposed on the first surface of the light emitting semiconductor device, the wavelength converting structure extending beyond the light emitting semiconductor device in the first dimension and the light emitting semiconductor device extending beyond the wavelength converting structure in the second dimension. The light emitting device may further include one or more optical extraction features in at least one gap formed by the wavelength converting structure extending beyond the light emitting semiconductor structure in the first dimension and/or formed by the light emitting semiconductor structure extending beyond the wavelength converting structure in the second dimension.

Abstract: A light emitting device having first, second and third dimensions that are orthogonal may include a light emitting semiconductor device configured to emit light via a first surface in a plane formed by the first and second dimensions. The light emitting device may further include a wavelength converting structure disposed on the first surface of the light emitting semiconductor device, the wavelength converting structure extending beyond the light emitting semiconductor device in the first dimension and the light emitting semiconductor device extending beyond the wavelength converting structure in the second dimension. The light emitting device may further include one or more optical extraction features in at least one gap formed by the wavelength converting structure extending beyond the light emitting semiconductor structure in the first dimension and/or formed by the light emitting semiconductor structure extending beyond the wavelength converting structure in the second dimension.

Abstract: A light emitting device having first, second and third dimensions that are orthogonal may include a light emitting semiconductor device configured to emit light via a first surface in a plane formed by the first and second dimensions. The light emitting device may further include a wavelength converting structure disposed on the first surface of the light emitting semiconductor device, the wavelength converting structure extending beyond the light emitting semiconductor device in the first dimension and the light emitting semiconductor device extending beyond the wavelength converting structure in the second dimension. The light emitting device may further include one or more optical extraction features in at least one gap formed by the wavelength converting structure extending beyond the light emitting semiconductor structure in the first dimension and/or formed by the light emitting semiconductor structure extending beyond the wavelength converting structure in the second dimension.

Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.