Abstract: A method to produce a light-emitting device package includes mounting junctions on pads of a metalized substrate, where the junctions are at least partially electrically insulated from each other, and forming wavelength converters, where each wavelength converter is located over a different junction and separated by a gap from neighboring wavelength converters.

Abstract: A method to produce a light-emitting device package includes mounting junctions on pads of a metalized substrate, where the junctions are at least partially electrically insulated from each other, and forming wavelength converters, where each wavelength converter is located over a different junction and separated by a gap from neighboring wavelength converters.

Abstract: A method to produce a light-emitting device package includes mounting junctions on pads of a metalized substrate, where the junctions are at least partially electrically insulated from each other, and forming wavelength converters, where each wavelength converter is located over a different junction and separated by a gap from neighboring wavelength converters.

Abstract: A method to produce a light-emitting device package includes mounting junctions on pads of a metalized substrate, where the junctions are at least partially electrically insulated from each other, and forming wavelength converters, where each wavelength converter is located over a different junction and separated by a gap from neighboring wavelength converters.

Abstract: Embodiments of the invention include a luminescent material. Particles of the luminescent material include a core of a first semiconductor material, a first shell of a second semiconductor material surrounding the core, a second shell of an insulating material disposed on a surface of the first shell, and a coating disposed on a surface of the second shell. The core shows quantum confinement and has a size in the nanometer range in at least one dimension.

Abstract: The present invention relates to a symmetric absorber-coupled far-infrared microwave kinetic inductance detector including: a membrane having an absorber disposed thereon in a symmetric cross bar pattern; and a microstrip including a plurality of conductor microstrip lines disposed along all edges of the membrane, and separated from a ground plane by the membrane. The conducting microstrip lines are made from niobium, and the pattern is made from a superconducting material with a transition temperature below niobium, including one of aluminum, titanium nitride, or molybdenum nitride. The pattern is disposed on both a top and a bottom of the membrane, and creates a parallel-plate coupled transmission line on the membrane that acts as a half-wavelength resonator at readout frequencies. The parallel-plate coupled transmission line and the conductor microstrip lines form a stepped impedance resonator. The pattern provides identical power absorption for both horizontal and vertical polarization signals.

Abstract: A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.