Patents by Inventor Amin Ezzeddine

Amin Ezzeddine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High efficiency, high frequency amplifiers
    Patent number: 8427241
    Abstract: The invention is an improvement in microwave and millimeter wave amplifiers. Capacitors are connected in parallel with the source and drain terminals of all of the amplifying elements in a series of such elements except the first, compensating for current leakage due to gate capacitance. This results in improved synchronism of the amplifying elements, and improved overall efficiency and circuit performance.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: April 23, 2013
    Assignee: AMCOM Communications, Inc.
    Inventors: Amin Ezzeddine, Ho C. Huang
  • High efficiency, high frequency amplifiers
    Publication number: 20120299658
    Abstract: The invention is an improvement in microwave and millimeter wave amplifiers. Capacitors are connected in parallel with the source and drain terminals of all of the amplifying elements in a series of such elements except the first, compensating for current leakage due to gate capacitance. This results in improved synchronism of the amplifying elements, and improved overall efficiency and circuit performance.
    Type: Application
    Filed: May 24, 2011
    Publication date: November 29, 2012
    Inventors: Amin Ezzeddine, Ho C. Huang
  • Method of assembling a monolithic gallium arsenide phased array using integrated gold post interconnects
    Patent number: 5416971
    Abstract: A monolithic gallium arsenide (GaAs) phased array using integrated gold (Au) posts for interconnecting multiple substrate layers. The phased array includes a GaAs substrate having transmit/receive modules fabricated on one side and radiating elements etched on the backside of the same substrate. The conductive gold posts are integrated on the same side with the transmit/receive modules and interconnect the transmit/receive modules with a distribution network which is printed on a second substrate. Gold posts are also used to interconnect DC bias and control lines of the two substrates.
    Type: Grant
    Filed: July 28, 1993
    Date of Patent: May 23, 1995
    Inventors: Gamal M. Hegazi, Krishna P. Pande, Amin Ezzeddine, Robert Sorbello, Bernard Geller
  • Monolithic gallium arsenide phased array using integrated gold post interconnects
    Patent number: 5262794
    Abstract: A monolithic gallium arsenide (GaAs) phased array using integrated gold (Au) posts for interconnecting multiple substrate layers. The phased array includes a GaAs substrate having transmit/receive modules fabricated on one side and radiating elements etched on the backside of the same substrate. The conductive gold posts are integrated on the same side with the transmit/receive modules and interconnect the transmit/receive modules with a distribution network which is printed on a second substrate. Gold posts are also used to interconnect DC bias and control lines of the two substrates.
    Type: Grant
    Filed: July 18, 1991
    Date of Patent: November 16, 1993
    Assignee: Communications Satellite Corporation
    Inventors: Gamal M. Hegazi, Krishna P. Pande, Amin Ezzeddine, Robert Sorbello, Bernard Geller