Abstract: A switchgear or control gear includes at least one first compartment; a plurality of removable modules; a plurality of main switchgear or control gear components; and a plurality of auxiliary switchgear or control gear components. The plurality of main switchgear or control gear components includes at least one main busbar system, at least one three position linear or rotational movement disconnector, at least one circuit breaker, and at least one cable connection. The plurality of auxiliary switchgear or control gear components includes at least one disconnector drive and at least one circuit breaker drive. The plurality of removable modules are configured to be mounted horizontally within the at least one first compartment at a plurality of horizontal locations. Movement of a removable module from its horizontal location, the movement including a vertical movement, is configured to move the one or more auxiliary components housed in or associated with that module.

Abstract: A switchgear or control gear includes at least one first compartment; a plurality of removable modules; a plurality of main switchgear or control gear components; and a plurality of auxiliary switchgear or control gear components. The plurality of main switchgear or control gear components includes at least one main busbar system, at least one three position linear or rotational movement disconnector, at least one circuit breaker, and at least one cable connection. The plurality of auxiliary switchgear or control gear components includes at least one disconnector drive and at least one circuit breaker drive. The plurality of removable modules are configured to be mounted horizontally within the at least one first compartment at a plurality of horizontal locations. Movement of a removable module from its horizontal location, the movement including a vertical movement, is configured to move the one or more auxiliary components housed in or associated with that module.

Abstract: A method for assembling a power semiconductor module with reduced partial discharge behavior is described. The method comprises the steps of bonding an insulating substrate (2) onto a bottom plate (11); disposing a first conductive layer (4) on a portion of said insulating substrate (2), so that at least one peripheral top region of said insulating substrate (2) remains uncovered by the first conductive layer (4); bonding a semiconductor chip (6) onto said first conductive layer (4); disposing a precursor (51) of a first insulating material (5) in a first corner (24) formed by said first conductive layer (4) and said peripheral region of said insulating substrate (2); polymerizing the precursor (51) of the first insulating material (5) to form the first insulating material (5): and covering said semiconductor chip (6), said substrate (2), said first conductive layer (4), and said first insulating material (5) at least partially with a second insulating material.

Abstract: A method for assembling a power semiconductor module with reduced partial discharge behavior is described. The method includes steps of bonding an insulating substrate onto a bottom plate; disposing a first conductive layer on a portion of said insulating substrate, so that at least one peripheral top region of said insulating substrate remains uncovered by the first conductive layer; bonding a semiconductor chip onto said first conductive layer; disposing a precursor of a first insulating material in a first corner formed by the first conductive layer and the peripheral region of the insulating substrate; polymerizing the precursor of the first insulating material to form the first insulating material; and covering the semiconductor chip, said substrate, the first conductive layer, and the first insulating material at least partially with a second insulating material. The precursor of the first insulating material can be a low viscosity monomer or oligomer, preferably a polyimide.

Abstract: The power module housing comprises two electrically insulating housing elements (1, 2) that are attached to each other. A first of said housing elements (2) comprises at least two openings (24) for electric power terminals (31, 32) and a slot-like recess (23). Between the openings (24) three insulating walls (11, 21, 22) are arranged on and perpendicular to a surface of the housing. One insulating wall (11) is part of a second of said housing elements (1) and is inserted into the recess (23) in said first housing element (2), while an at least one second of said insulating walls (21, 22) is part of the first housing element (2). The insulating walls between the openings for the power terminals allow a compact arrangement of the terminals.

Abstract: The power semiconductor submodule (1) has at least two semiconductor chips (21, 22), which have two main electrodes (3, 4), between two main connections (6, 7), with a contact force being exerted by a contact die (8) on the one main electrode (3), and the other main electrode (4) of the semiconductor chip (21, 22) thus being pressed against a base plate (5). The two semiconductor chips (21, 22) are electrically connected in series between the two main connections (6, 7) of the power semiconductor submodule.

Abstract: The power module housing comprises two electrically insulating housing elements (1, 2) that are attached to each other. A first of said housing elements (2) comprises at least two openings (24) for electric power terminals (31, 32) and a slot-like recess (23). Between the openings (24) three insulating walls (11, 21, 22) are arranged on and perpendicular to a surface of the housing. One insulating wall (11) is part of a second of said housing elements (1) and is inserted into the recess (23) in said first housing element (2), while an at least one second of said insulating walls (21, 22) is part of the first housing element (2).