Patents by Inventor Amir Abbas Haghighirad

Amir Abbas Haghighirad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11282973
    Abstract: The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising: (a) cesium; (b) palladium; and (c) one or more halide anions [X]. The invention also relates to a layer comprising the semiconducting material. The invention further relates to a process for producing a halometallate compound of formula (IV): [A]2[MIV][X]6, which process uses a H[X] and a compound comprising a sulfoxide group.
    Type: Grant
    Filed: April 20, 2018
    Date of Patent: March 22, 2022
    Assignee: OXFORD UNIVERSITY INNOVATION LIMITED
    Inventors: Nobuya Sakai, Amir Abbas Haghighirad, Henry James Snaith
  • Publication number: 20200044102
    Abstract: The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising: (a) cesium; (b) palladium; and (c) one or more halide anions [X]. The invention also relates to a layer comprising the semiconducting material. The invention further relates to a process for producing a halometallate compound of formula (IV): [A]2[MIV][X]6, which process uses a H[X] and a compound comprising a sulfoxide group.
    Type: Application
    Filed: April 20, 2018
    Publication date: February 6, 2020
    Inventors: Nobuya Sakai, Amir Abbas Haghighirad, Henry James Snaith