Abstract: The invention provides a method of managing bad block in a data storage device having an OTP memory die in order to present a continues address space toward the user, by using some of the OTP memory space for the management and maintaining address replacement table. Fast and efficient programming and reading algorithms are presented.

Abstract: A memory chip includes memory cells storing data to be read, at least one reference cell having a reference cell current level, at least one reference gate voltage memory cell storing a reference gate voltage value and a read circuit to read the memory cells with a fixed gate voltage with respect to at least one reference cell activated at a voltage having its associated stored reference gate voltage value.

Abstract: A memory chip includes memory cells storing data to be read; at least one reference cell having a reference cell current level and a reference gate voltage adjuster to adjust, for each reference cell, a reference gate voltage level to compensate for a shift of the reference cell current level from an original current level.

Abstract: Aspects of the disclosure provide a CAM module that can be used independent of a defective entry line. The CAM module can include at least a CAM array having at least X CAM entry lines, and an additional CAM entry line. Each CAM entry line may include a selection line for enabling the CAM entry line for writing and/or reading and an entry output for indicating matching to a search key. Further, the CAM module can include a decoder unit that can decode an address to enable one out of X word-lines, and an encoder unit that can encode X matching outputs to a matching address according to a predetermined priority sequence. Additionally, the CAM module can include a switching unit coupling the CAM array with the decoder unit and the encoder unit.

Abstract: A memory chip includes memory cells storing data to be read, at least one reference cell having a reference cell current level, at least one reference gate voltage memory cell storing a reference gate voltage value and a read circuit to read the memory cells with a fixed gate voltage with respect to at least one reference cell activated at a voltage having its associated stored reference gate voltage value.

Abstract: Aspects of the disclosure provide a CAM module that can be used independent of a defective entry line. The CAM module can include at least a CAM array having at least X CAM entry lines, and an additional CAM entry line. Each CAM entry line may include a selection line for enabling the CAM entry line for writing and/or reading and an entry output for indicating matching to a search key. Further, the CAM module can include a decoder unit that can decode an address to enable one out of X word-lines, and an encoder unit that can encode X matching outputs to a matching address according to a predetermined priority sequence. Additionally, the CAM module can include a switching unit coupling the CAM array with the decoder unit and the encoder unit.

Abstract: The invention provides a method of managing bad block in a data storage device having an OTP memory die in order to present a continues address space toward the user, by using some of the OTP memory space for the management and maintaining address replacement table. Fast and efficient programming and writing algorithms are presented.

Abstract: The invention provides a method of managing bad block in a data storage device having an OTP memory die in order to present a continues address space toward the user, by using some of the OTP memory space for the management and maintaining address replacement table. Fast and efficient programming and reading algorithms are presented.

Abstract: A method of delaying an input signal comprises serially receiving the input signal at a plurality of rows of delay elements; applying a row selection signal to a row of delay elements to select the row from the plurality of rows; supplying a column selection signal to a tap buffer associated with a delay element in the selected row to select an output of the delay element; coupling outputs of tap buffers associated with delay elements in each row to form an output of each row; coupling outputs of each of the plurality of rows to provide an incrementally-delayed input signal from the selected row; outputting the incrementally-delayed input signal from the selected delay element in the selected row; and changing row selection from the selected row to a contiguous row of the plurality of rows in the absence of a change in the selection of the corresponding tap buffers.

Abstract: A circuit having a corresponding method comprises one or more circuits each to produce one or more status signals, wherein each of the status signals represents a status of a respective one of the one or more circuits; a memory; a memory controller to store a plurality of samples of the one or more status signals in the memory; a plurality of input/output terminals; an interface in communication with one or more of the input/output terminals; and a debug circuit to transfer the one or more samples of the status signals from the memory to the interface.

Abstract: A diagonal matrix delay includes a plurality of rows of first buffers in serial communication with an input signal. The diagonal matrix delay includes a plurality of second buffers. Each second buffer is responsive to an output of an associated first buffer and to a column selection signal. The diagonal matrix delay includes a plurality of control lines. Each control line supplies column selection signals to the corresponding second buffers associated with each of the plurality of rows. Corresponding second buffers controlled by a control line are offset between contiguous rows by at least one column to form a substantially diagonal arrangement of columns of second buffers relative to the plurality of rows of first buffers.