Abstract: A non-volatile storage apparatus includes a set of non-volatile memory cells and one or more control circuits in communication with the set of non-volatile memory cells. The one or more control circuits are configured to group physical addresses of the set of non-volatile memory cells into groups of configurable sizes and to individually apply wear leveling schemes to non-volatile memory cells of a group.

Abstract: Apparatuses, systems, and methods are disclosed for wear leveling for non-volatile memory. An apparatus may include one or more non-volatile memory elements, and a controller. A controller may perform a wear-leveling process for one or more non-volatile memory elements, by periodically updating a logical-to-physical mapping and moving data based on the updated mapping. A controller may detect a wear-based attack for one or more non-volatile memory elements. A controller may change a wear-leveling process in response to detecting a wear-based attack.

Abstract: A non-volatile storage apparatus includes a set of non-volatile memory cells and one or more control circuits in communication with the set of non-volatile memory cells. The one or more control circuits are configured to map the set of non-volatile memory cells into a plurality of regions, apply a first wear leveling scheme in a first region of the plurality of regions, and apply a second wear leveling scheme between the plurality of regions.

Abstract: Apparatuses, systems, and methods are disclosed for wear leveling for non-volatile memory. An apparatus may include one or more non-volatile memory elements, and a controller. A controller may perform a wear-leveling process for one or more non-volatile memory elements, by periodically updating a logical-to-physical mapping and moving data based on the updated mapping. A controller may detect a wear-based attack for one or more non-volatile memory elements. A controller may change a wear-leveling process in response to detecting a wear-based attack.

Abstract: A non-volatile storage apparatus includes a set of non-volatile memory cells and one or more control circuits in communication with the set of non-volatile memory cells. The one or more control circuits are configured to remap logical addresses to physical addresses of the set of non-volatile memory cells according to a plurality of placement mappings and to select a new placement mapping from the plurality of placement mappings according to a cost function associated with the new placement mapping.

Abstract: A non-volatile storage apparatus includes a set of non-volatile memory cells and one or more control circuits in communication with the set of non-volatile memory cells. The one or more control circuits are configured to map the set of non-volatile memory cells into a plurality of regions, apply a first wear leveling scheme in a first region of the plurality of regions, and apply a second wear leveling scheme between the plurality of regions.

Abstract: A non-volatile storage apparatus includes a set of non-volatile memory cells and one or more control circuits in communication with the set of non-volatile memory cells. The one or more control circuits are configured to group physical addresses of the set of non-volatile memory cells into groups of configurable sizes and to individually apply wear leveling schemes to non-volatile memory cells of a group.

Abstract: A non-volatile storage apparatus includes a set of non-volatile memory cells and one or more control circuits in communication with the set of non-volatile memory cells. The one or more control circuits are configured to remap logical addresses to physical addresses of the set of non-volatile memory cells according to a plurality of placement mappings and to select a new placement mapping from the plurality of placement mappings according to a cost function associated with the new placement mapping.