Abstract: A showerhead for a process chamber is provided including: a first portion that includes a plurality of gas inlets and a first plurality of gas outlets; and a second portion over the first portion, the second portion including a second plurality of gas outlets, wherein the plurality of gas inlets of the first portion are fluidly coupled to the second plurality of gas outlets of the second portion, the first plurality of gas outlets of the first portion are fluidly coupled to the plurality of gas inlets of the first portion, the second portion is transparent to infrared radiation and ultraviolet radiation, and the first portion is transparent to infrared radiation and opaque to ultraviolet radiation.

Abstract: A window component, a chamber, and a method of processing substrates are described herein. In one example, a semiconductor process chamber window component comprises a transparent quartz body. The body comprises a top surface, a bottom surface, a central portion disposed near a center axis of the body, and one or more fluid channels formed within the body. The one or more fluid channels are configured to flow a fluid from a first side of the body towards a second side of the body and the first side is disposed opposite the second side.

Abstract: The present disclosure relates to heaters, and related chamber kits and processing chambers, for semiconductor manufacturing. In one or more embodiments, a chamber kit applicable for semiconductor manufacturing includes a heater and a liner. The heater includes an arcuate heater body including one or more first sections, one or more second sections, and one or more connector sections. The heater includes a first electrode coupled to the arcuate heater body, and a second electrode coupled to the arcuate heater body. The liner includes a ledge sized and shaped to support the arcuate heater body, a first opening sized and shaped to receive at least part of the heater therethrough, and a second opening sized and shaped to receive at least part of the heater therethrough.

Abstract: Exemplary methods of coating a metal-containing component are described. The methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. The methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. The coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (CTE) that is less than a metal substrate CTE and a bonding layer CTE. The coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate CTE to an environmental barrier layer CTE is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. The metal-containing components may be used in fabrication equipment for electronic devices.

Abstract: Exemplary methods of coating a metal-containing component are described. The methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. The methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. The coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (CTE) that is less than a metal substrate CTE and a bonding layer CTE. The coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate CTE to an environmental barrier layer CTE is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. The metal-containing components may be used in fabrication equipment for electronic devices.

Abstract: Substrate support assembly and methods of making such substrate support assemblies are provided. Substrate support assemblies include an electrostatic chuck body defining a substrate support surface, a support stem coupled with the electrostatic chuck body, and an electrode embedded within the electrostatic chuck body. Substrate support surfaces exhibit a resistivity of 1×108 ?-cm to 1×1011 ?-cm at a temperature of greater than 650° C. Substrate support surfaces can include a composite ceramic material having a base dielectric material and a second dielectric material having an electrical resistivity at least about two times higher than an electrical resistivity of the base dielectric material at a temperature of greater than 650° C.

Abstract: An epitaxial growth processing chamber with a component having a macrocell support structure configured with interconnecting physical supports that define fluidly-connected pores is described. A component configured for use in an epitaxial growth processing chamber having a macrocell support structure configured with interconnecting physical supports that define fluidly-connected pores is also described. The component is a baseplate, an exhaust cap, an injection ring, an injection cap, a lower reflector, an upper reflector, a lower heat shield, an upper heat shield, a cone reflector, or combinations thereof. In some instances, the component may further include an inlet flow port. In some other instances, the component may further include an inlet flow port, outlet flow port and a fluid flow wall, and optionally a fluid flow baffle, and optionally a reflective surface.

Abstract: Embodiments described herein generally relate to highly reflective metallic alloys for components (such as chamber components) of semiconductor processing equipment, and related methods and processing chambers. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body having an internal volume, and one or more heat sources configured to provide heat to the internal volume. The processing chamber includes an upper window and a lower window. The processing chamber includes one or more chamber components positioned to reflect energy emitted from the one or more heat sources through at least one of the upper window or the lower window and into the internal volume, the one or more chamber components comprising a metallic alloy and one or more reflective surfaces having a surface roughness (Ra) that is 5.0 nanometer or less.

Abstract: An epitaxial growth processing chamber has a component that has a macrocell support structure. The macrocell support structure has interconnecting physical supports that define fluidly-connected pores. A component configured for use in an epitaxial growth processing chamber has a macrocell support structure with interconnecting physical supports defining fluidly-connected pores. The component may be one or more of a lower liner, an upper liner, a baseplate, an exhaust cap, an injection ring, and an injection cap. The interconnecting physical supports may comprise a material such as a metal, a ceramic or glass material, a polymeric material, and combinations thereof. The component may have a free-standing configuration, a plate-supported configuration, a sandwich configuration, a surface sealed configuration, and a solid polymer-filled configuration.

Abstract: A reflector and processing chamber having the same are described herein. In one example, a reflector is provided that includes cylindrical body, a cooling channel, and a reflective coating. The cylindrical body has an upper surface and a lower surface. The lower surface has a plurality of concave reflector structures disposed around a centerline of the cylindrical body. The cooling channel disposed in or on the cylindrical body. The reflective coating is disposed on the plurality of concave reflector structures.

Abstract: A reflector and processing chamber having the same are described herein. In one example, a reflector is provided that includes cylindrical body, a cooling channel, and a reflective coating. The cylindrical body has an upper surface and a lower surface. The lower surface has a plurality of concave reflector structures disposed around a centerline of the cylindrical body. The cooling channel disposed in or on the cylindrical body. The reflective coating is disposed on the plurality of concave reflector structures.

Abstract: A coating on a processing chamber component includes a metallic bond layer deposited on a surface of the component. A thermal barrier layer is deposited on the bond layer. A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer. The sealing layer substantially conforms to irregularities of the surface of the thermal barrier layer. A chemistry of the sealing layer is selected for resistance to attack from halogen-containing chemicals.

Abstract: A coating on a processing chamber component includes a metallic bond layer deposited on a surface of the component. A thermal barrier layer is deposited on the bond layer. A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer. The sealing layer substantially conforms to irregularities of the surface of the thermal barrier layer. A chemistry of the sealing layer is selected for resistance to attack from halogen-containing chemicals.

Abstract: Exemplary methods of coating a metal-containing component are described. The methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. The methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. The coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (CTE) that is less than a metal substrate CTE and a bonding layer CTE. The coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate CTE to an environmental barrier layer CTE is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. The metal-containing components may be used in fabrication equipment for electronic devices.