Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

Abstract: A chamber arrangement has a chamber body with upper and lower walls. A substrate support is arranged within an interior of the chamber body and supported for rotation about a rotation axis. An upper heater element array is supported above the upper wall and a lower heater element array supported below the lower wall. A pyrometer is supported above the upper heater element array, is optically coupled to the interior of the chamber body, and is operably connected to the upper heater element array. A thermocouple is arranged within the interior of the chamber body, is in intimate mechanical contact with the substrate support, and is operably connected to the lower heater element array. Semiconductor processing systems and material layer deposition methods are also described.

Abstract: A method of depositing an epitaxial material layer using pyrometer-based control. The method includes cleaning a reaction chamber of a reactor system, and, after the cleaning, providing a substrate within the reaction chamber. The method includes stabilizing a temperature of the substrate relative to a target deposition temperature. During stabilization, the heater assembly is operated with control signals to operate heaters in the heater assembly that are generated based on a direct measurement of the temperature of the substrate, such as with one to three pyrometers. The method includes, after the stabilizing of the temperature of the substrate, depositing an epitaxial material layer on a surface of the substrate. Then, for an additional number of substrates, the method involves repeating the steps of providing a substrate within the reaction chamber, stabilizing the temperature of the substrate, and depositing an epitaxial material layer on the substrate followed by another chamber cleaning.

Abstract: A reactor system may comprise a first reaction chamber and a second reaction chamber. The first and second reaction chambers may each comprise a reaction space enclosed therein, a susceptor disposed within the reaction space, and a fluid distribution system in fluid communication with the reaction space. The susceptor in each reaction chamber may be configured to support a substrate. The reactor system may further comprise a first reactant source, wherein the first reaction chamber and the second reaction chamber are fluidly coupled to the first reactant source at least partially by a first reactant shared line. The reactor system may be configured to deliver a first reactant from the first reactant source to the first reaction chamber and a second reaction chamber through the first reactant shared line.

Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

Abstract: A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.

Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

Abstract: Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

Abstract: A method of depositing one or more epitaxial material layers, a device structure formed using the method and a system for performing the method are disclosed. Exemplary methods include coating a surface of a reaction chamber with a precoat material, processing a number of substrates, and then cleaning the reaction chamber.

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.