Abstract: The present disclosure relates to a cell extraction device comprising: a plurality of cell extraction modules arranged in a single layer array, the single layer array having a cell-receiving side wherein an opening of at least one of the plurality of cell extraction modules on the cell-receiving surface is configured to receive and retain a single target cell from a fluid sample, and a fluid-evacuating side wherein an opening of the or each of the plurality of cell extraction modules on the fluid-evacuating side is configured to allow fluid from the fluid sample to be evacuated from the cell extraction device, wherein at least one of the plurality of cell extraction modules comprises a micropore capillary configured at a first end that is open on the cell-receiving side to receive a target cell, and configured at a second end that is open on the fluid-evacuating side to allow fluid to pass through.

Abstract: The present application describes embodiments of a radio-frequency identification (RFID) sensor based on a combination of a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) conducting structure, and its use in hemodynamic wearable devices. The SAW RFID sensor chip contains a piezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises at least two layers, a buffer layer and a barrier layer, wherein the layers are grown from III-V single-crystalline or polycrystalline semi-conductor materials, such as Ga N/Al Ga N. Interdigitated transducers (IDTs) transducing SAWs are installed on top of the barrier layer. A 2DEG or 2DHG conducting channel is formed at the interface between the buffer and barrier layers and provides electron or hole current in the system between the non-ohmic (capacitively-coupled) source and drain contacts connected to the formed channel.

Abstract: In some embodiments, the PC-HEMT based microelectronic sensors are used in cardiovascular and pulmonary monitoring, detection and measurements of electrocardiography signals, detection of the primary heart activity signals and measurements of the central venous pressure and heart rate variability, measurements of the right and left atrium pressures, recording a phonocardiogram, detection of the S2-split phenomena, measurements of breath dynamics and lung activity diagnostics, monitoring the brain activity and measuring and monitoring electrical signals associated with an electroencephalogram, and eye pressure diagnostics.

Abstract: The present application describes embodiments of a radio-frequency identification (RFID) sensor based on a combinationof a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG)conducting structure, and its use in chemical detection and (bio)molecular diagnostics. The SAW RFID sensor chip contains apiezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises atleast two layers, a buffer layer and a barrier layer, wherein both layers are grown from III-V single-crystalline or polycrystallinesemiconductor materials, such as Ga N/Al Ga N. Interdigitated transducers (IDTs) transducing SAWs are installed on top of thebarrier layer. A 2DEG or 2DHG conducting channel is formed at the interface between the buffer and barrier layers and provideselectron or hole current in the system between the non-ohmic (capacitively-coupled) source and drain contacts connected to theformed channel.

Abstract: The present application describes embodiments of a zero-power radio-frequency identification (RFID) sensor chip based on a combination of a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional holegas (2DHG) conducting structure, and its use as an ultrasensitive microphone for material and structure sensing. The SAW RFID sensor contains a piezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises at least two layers, a buffer layer and a barrier layer, wherein both layers are grown from III-V single-crystalline or polycrystalline semiconductor materials, such as Ga N/Al Ga N. Interdigitated transducers (IDTs) transducing SAWs are installed on top of the barrier layer.

Abstract: An electrical circuit element, defined as “pixel”, can include at least one silicon nanowire open for contact with a medium for sensing; a metal electrode open for contact with said medium and used for feeding a high-frequency sinusoidal stimulation in impedance measurements and for sensing properties of said medium; implanted source and drain electrodes connected to said silicon nanowire and leaving the gate area and parts of said electrode open for contact with said medium; electrical metal contacts for connecting said pixel to an electrical circuit; and a reference electrode open for contact with said medium for creating a three-electrode-cell system and providing a constant gate potential in the circuit. Some embodiments provide a microelectronic sensor and wearable-patch sensor based on the array of these pixels. Also, some embodiments provide methods for performing DC readout, AC readout and a triple readout combining both DC and AC readouts and temperature sensing.

Abstract: In a method for identifying an explosive in a sample, an explosive fingerprint defined by a set of kinetic parameters is received. The kinetic parameters describe a plurality of interactions between the explosive and each of a respective plurality of functional moieties. A data processor is used for accessing a database of explosive fingerprints, and searching the database for a database fingerprint matching the received fingerprint.

Abstract: In some embodiments, the present application provides a swallowable capsule comprising pseudo conductive high-electron-mobility transistors (PC-HEMTs), and its use in an intestinal and gut diagnostics and gut motility monitoring.

Abstract: In some embodiments, the PC-HEMT based microelectronic sensors are used in recording physiological and non-physiological sounds as hypersensitive microphones. Recording the physiological sounds is associated with the S1/S2 heart split phenomena and phonocardiography.

Abstract: n some embodiments, an open-gate pseudo-conductive high-electron mobility transistor (PC-HEMT) includes a multilayer hetero-junction structure made of III-V single-crystalline or polycrystalline semiconductor materials. This structure includes at least one buffer layer and a barrier layer, and is deposited on a substrate layer. The PC-HEMT further includes a two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) conducting channel formed at the interface between the buffer layer and the barrier layer, source and drain contacts, either ohmic or non-ohmic, connected to the 2DEG or 2DHG conducting channel, electrical metallizations for connecting the PC-HEMT to an electric circuit, and an open gate area between the source and drain contacts.

Abstract: In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for air quality monitoring. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two-dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts are non-ohmic (capacitively-coupled) and connected to the formed 2DEG channel and to the electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system. The metal gate electrode is placed between the source and drain areas on or above the barrier layer, which may be recessed or grown to a specific thickness.

Abstract: In some embodiments, an electrical circuit element, defined as “optoelectronic pixel”, comprises at least one silicon nanowire decorated with optoelectronically active particles and open for contact with a medium for sensing; a metal electrode open for contact with said medium and used for feeding a high-frequency sinusoidal stimulation in impedance measurements and for sensing properties of said medium; implanted source and drain electrodes connected to said silicon nanowire and leaving the gate area and parts of said electrode open for contact with said medium; electrical metal contacts for connecting said pixel to an electrical circuit; and a reference electrode open for contact with said medium for creating a three-electrode-cell system and providing a constant gate potential in the circuit. In addition, some embodiments provide an optoelectronic sensor and wearable-patch sensor based on the array of the optoelectronic pixels, and the readout methods for these sensors.

Abstract: In some embodiments, an inverting amplifier includes four electrical circuit elements (or “pixels”), with two pixels used as sensing elements and two pixels used as adjustable resistors for adjusting amplification factor to operate all pixels at the same amplification factor and cancelling out variations from processing. The sensing pixels include a silicon nanowire exposed to liquid or gas medium for sensing, a metal electrode partially open for contact with the medium and used for feeding a high-frequency sinusoidal stimulation in impedance measurements and for sensing properties of the medium, implanted source and drain electrodes connected to the nanowire, and electrical metal contacts attached to the electrodes and connecting the pixel to an electrical circuit. The two compensation pixels include an n-type or p-type silicon nanowire, implanted source and drain electrodes connected to the nanowire, and electrical metal contacts attached to the electrodes and connecting the pixel to an electrical circuit.

Abstract: In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for biometric authentication of a user. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two-dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts, which maybe either ohmic or non-ohmic (capacitively-coupled), are connected to the formed 2DEG channel and to electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system.

Abstract: In some embodiments, an electrical circuit element, defined as “optoelectronic pixel”, comprises at least one silicon nanowire decorated with optoelectronically active particles and open for contact with a medium for sensing; a metal electrode open for contact with said medium and used for feeding a high-frequency sinusoidal stimulation in impedance measurements and for sensing properties of said medium; implanted source and drain electrodes connected to said silicon nanowire and leaving the gate area and parts of said electrode open for contact with said medium; electrical metal contacts for connecting said pixel to an electrical circuit; and a reference electrode open for contact with said medium for creating a three-electrode-cell system and providing a constant gate potential in the circuit. In addition, some embodiments provide an optoelectronic sensor and wearable-patch sensor based on the array of the optoelectronic pixels, and the readout methods for these sensors.

Abstract: An electrical circuit element, defined as “pixel”, can include at least one silicon nanowire open for contact with a medium for sensing; a metal electrode open for contact with said medium and used for feeding a high-frequency sinusoidal stimulation in impedance measurements and for sensing properties of said medium; implanted source and drain electrodes connected to said silicon nanowire and leaving the gate area and parts of said electrode open for contact with said medium; electrical metal contacts for connecting said pixel to an electrical circuit; and a reference electrode open for contact with said medium for creating a three-electrode-cell system and providing a constant gate potential in the circuit. Some embodiments provide a microelectronic sensor and wearable-patch sensor based on the array of these pixels. Also, some embodiments provide methods for performing DC readout, AC readout and a triple readout combining both DC and AC readouts and temperature sensing.

Abstract: A method and a system for identifying an explosive in a sample are disclosed. The method comprises receiving an explosive fingerprint defined by a set of kinetic parameters, describing a plurality of interactions between the explosive and each of a respective plurality of functional moieties. The method further comprises using a data processor for accessing a database of explosive fingerprints, and searching the database for a database fingerprint matching the received fingerprint. The system comprises a plurality of sensing devices, each comprising semiconductor nanostructures (e.g. Si nanowires) having attached thereto a functional moiety selected to interact with a nitro-containing and/or peroxide-containing explosive sample.

Abstract: A detector and modulator of electromagnetic radiation is 3-dimensional structure made of substantially 2 dimensional high impedance metamaterial surfaces stacked one above the other with a dielectric layer in between and located above a conducting ground plane. Each 2 dimension surface may be formed by an open continuous conductive trace, such as metallic wire or a printed circuit line, which is cast or plated on or into a 2-D periodic arrangement of an element that belongs to the Hilbert space filling curves.

Abstract: A detector and modulator of electromagnetic radiation is 3-dimensional structure made of substantially 2 dimensional high impedance metamaterial surfaces stacked one above the other with a dielectric layer in between and located above a conducting ground plane. Each 2 dimension surface may be formed by an open continuous conductive trace, such as metallic wire or a printed circuit line, which is cast or plated on or into a 2-D periodic arrangement of an element that belongs to the Hilbert space filling curves.

Abstract: A device which converts mechanical deformation in electrical current, these mechanical deformations are generated as a result of liquid pressure over a part of the device. This device is integrated within an implantable lead and inserted into the cardiovascular system of a patient. The purpose of the device is to charge a battery which stores energy for various uses of other implantable devices.