Abstract: Disclosed is an imaging apparatus comprising: a segmented scintillator structure; and a photocathode structure optically coupled to the segmented scintillator structure, for conversion of high-energy particles with an arbitrary spatial distribution to a corresponding distribution of photoelectrons, emitted with a spread in energy ranging from 100 meV to 1 meV. Also disclosed is an imaging apparatus comprising: a segmented scintillator structure, and a photocathode structure optically coupled to the segmented scintillator structure, for conversion of high-energy particles with an arbitrary spatial distribution to a corresponding distribution of photoelectrons, emitted with an angular spread ranging from 10 degrees to 0.1 degrees. Also disclosed is a pressureless filling of capillary tubes and nano-molds using electroosmosis effect.

Abstract: A high-resolution imaging apparatus that includes a multi-purpose high-energy particle sensor array to initially stop high-energy particles and then transfer the down-converted photons into near zero energy photoelectrons is described, as well as the method to produce the same. The imaging apparatus is a segmented scintillator structure optically coupled to a closely placed photocathode structure for high-efficiency conversion of high-energy particles with an arbitrary spatial distribution to the corresponding distribution of photoelectrons, emitted with a very low spread in energy and momentum.

Abstract: A high-resolution imaging apparatus that includes a multi-purpose high-energy particle sensor array to initially stop high-energy particles and then transfer the down-converted photons into near zero energy photoelectrons is described, as well as the method to produce the same. The imaging apparatus is a segmented scintillator structure optically coupled to a closely placed photocathode structure for high-efficiency conversion of high-energy particles with an arbitrary spatial distribution to the corresponding distribution of photoelectrons, emitted with a very low spread in energy and momentum.

Abstract: A heterostructure semiconductor device capable of emitting electromagnetic radiation and having a junction with opposite conductivity type materials on either side thereof supported on a substrate with an active layer therebetween comprising zinc oxide and having a band gap energy that is less than that of either of the opposite conductivity type materials.

Abstract: An energy-enhanced, low-temperature growth technique is used for direct deposition of periodic table column III nitrides-based negative electron affinity (NEA) photocathodes on standard glass microchannel plates (MCPs.) As working examples, low-temperature RF plasma-assisted molecular beam epitaxy growth (MBE) of p-type GaN layers on sapphire, quartz, and glass and alumina MCPs and their photoemission characterization is disclosed.