Abstract: Systems and methods disclosed herein include a device with a bulk acoustic wave resonator and one or more trenches that are configured to impede the flow of acoustic energy to the bulk acoustic wave resonator.

Abstract: A sensing device includes a resonant member that is movable in a first mode and a second mode, and an electrode. The resonant member has a capacitive surface portion that faces and is capacitively coupled to a capacitive surface portion of the electrode. Displacement for each point along the capacitive surface portion of the resonant member in the first mode is substantially tangent to the point.

Abstract: A sensing device includes a resonant member that is movable in a first mode and a second mode, and an electrode. The resonant member has a capacitive surface portion that faces and is capacitively coupled to a capacitive surface portion of the electrode. Displacement for each point along the capacitive surface portion of the resonant member in the first mode is substantially tangent to the point.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor layer having a first-type region and a second-type region that are stacked and interface with each other to form a p-n junction, the first-type region defining a first side of the semiconductor layer and the second-type region defining a second side of the semiconductor layer. The method further includes providing an insulating layer on the second side of the semiconductor layer and etching the semiconductor layer from the first side of the semiconductor layer toward the second side of the semiconductor layer to form a trench. The first-type region corresponds to one of a n-type region and a p-type region, and the second-type region corresponds to the other of the n-type region and the p-type region.

Abstract: A sensing device includes a resonant member that is movable in a first mode and a second mode, and an electrode. The resonant member has a capacitive surface portion that faces and is capacitively coupled to a capacitive surface portion of the electrode. Displacement for each point along the capacitive surface portion of the resonant member in the first mode is substantially tangent to the point.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor layer having a first-type region and a second-type region that are stacked and interface with each other to form a p-n junction, the first-type region defining a first side of the semiconductor layer and the second-type region defining a second side of the semiconductor layer. The method further includes providing an insulating layer on the second side of the semiconductor layer and etching the semiconductor layer from the first side of the semiconductor layer toward the second side of the semiconductor layer to form a trench. The first-type region corresponds to one of a n-type region and a p-type region, and the second-type region corresponds to the other of the n-type region and the p-type region.

Abstract: A MEMS BAW vibratory planar gyroscope having an in-plane electrode configuration for mode-alignment by utilizing alignment electrodes that have a height less than a full height of the gyroscope resonant body. Such alignment electrodes apply a force component that affects modes with both in-plane and out-of-plane movements. The gyroscope includes a resonant body having a height and a perimeter surface and electrodes disposed adjacent the exterior perimeter surface of the resonant body. At least one of the electrodes is an alignment electrode and has a height less than the height of the resonant body.

Abstract: Embodiments of the invention include micromechanical resonators. These resonators can be fabricated from thin silicon layers. Both rotational and translational resonators are disclosed. Translational resonators can include two plates coupled by two resonate beams. A stable DC bias current can be applied across the two beams that causes the plates to resonate. In other embodiments, disk resonators can be used in a rotational mode. Other embodiments of the invention include using resonators as timing references, frequency sources, particle mass sensors, etc.

Abstract: A MEMS BAW vibratory planar gyroscope having an in-plane electrode configuration for mode-alignment by utilizing alignment electrodes that have a height less than a full height of the gyroscope resonant body. Such alignment electrodes apply a force component that affects modes with both in-plane and out-of-plane movements. The gyroscope includes a resonant body having a height and a perimeter surface and electrodes disposed adjacent the exterior perimeter surface of the resonant body. At least one of the electrodes is an alignment electrode and has a height less than the height of the resonant body.

Abstract: A resonant gyroscope apparatus has a decoupling mechanism implemented with spring-like flexure members to effectively isolate an axis-symmetric bulk-acoustic wave (BAW) vibratory gyroscope from its substrate, thereby minimizing the effect that external sources of error have on offset and scale-factor. The spring-like structure enables degeneracy of in-plane resonance modes of the annulus and aids in decoupling the in-plane and out-of-plane resonance modes of the resonant annulus, thereby enabling the mode-matched and/or near mode-matched operation of the structure as a vibratory gyroscope in the pitch, roll and yaw-modes.

Abstract: Embodiments of the invention include micromechanical resonators. These resonators can be fabricated from thin silicon layers. Both rotational and translational resonators are disclosed. Translational resonators can include two plates coupled by two resonate beams. A stable DC bias current can be applied across the two beams that causes the plates to resonate. In other embodiments, disk resonators can be used in a rotational mode. Other embodiments of the invention include using resonators as timing references, frequency sources, particle mass sensors, etc.