Abstract: A plasma lamp for use in a laser-sustained plasma (LSP) light source is disclosed. The plasma lamp includes a gas containment structure for containing a gas, a gas seal positioned at a base of the gas containment structure, a gas inlet, and a gas outlet. The plasma lamp includes a gas swirler including a set of nozzles configured to generate a vortex gas flow and a swirler shaft including an inlet channel for delivering the gas from the gas inlet to the nozzles and an outlet channel for delivering the gas from the gas containment structure to the gas outlet. The plasma lamp includes a distributor including one or more plenums to distribute the gas from the gas inlet into the swirler. The plasma lamp may also include a deflector fluidically coupled to the swirler shaft and extending above the set of nozzles and configured to direct gas flow around the swirler.

Abstract: A plasma lamp for use in a laser-sustained plasma (LSP) light source is disclosed. The plasma lamp includes a gas containment structure for containing a gas, a gas seal positioned at a base of the gas containment structure, a gas inlet, and a gas outlet. The plasma lamp includes a gas swirler including a set of nozzles configured to generate a vortex gas flow and a swirler shaft including an inlet channel for delivering the gas from the gas inlet to the nozzles and an outlet channel for delivering the gas from the gas containment structure to the gas outlet. The plasma lamp includes a distributor including one or more plenums to distribute the gas from the gas inlet into the swirler. The plasma lamp may also include a deflector fluidically coupled to the swirler shaft and extending above the set of nozzles and configured to direct gas flow around the swirler.

Abstract: A novel apparatus for bonding of two polished substrates includes a plasma source in a ultra-high vacuum (UHV) chamber and a wafer-guiding element to control and guide wafers in the UHV chamber, where after a plasma activation process the wafers are guided and pressed against each other to form a covalent bond between wafer surfaces. The plasma activation process involves deposition of mono-layer or sub-monolayer metallic atom on the surface of substrates. After deposition of metallic layers, a high-force actuation presses the wafers and forms a covalent bond between the wafers. Then, the bonded wafer pair is ion-sliced or thinned to form single crystalline optical thin film. An annealing process oxidizes the deposited metallic layers and produces optically-transparent single crystalline thin film. An optical waveguide may be fabricated by this thin film while utilizing an electro-optic effect to produce optical modulators and other photonic devices.

Abstract: A novel apparatus for bonding of two polished substrates includes a plasma source in a ultra-high vacuum (UHV) chamber and a wafer-guiding element to control and guide wafers in the UHV chamber, where after a plasma activation process the wafers are guided and pressed against each other to form a covalent bond between wafer surfaces. The plasma activation process involves deposition of mono-layer or sub-monolayer metallic atom on the surface of substrates. After deposition of metallic layers, a high-force actuation presses the wafers and forms a covalent bond between the wafers. Then, the bonded wafer pair is ion-sliced or thinned to form single crystalline optical thin film. An annealing process oxidizes the deposited metallic layers and produces optically-transparent single crystalline thin film. An optical waveguide may be fabricated by this thin film while utilizing an electro-optic effect to produce optical modulators and other photonic devices.

Abstract: A novel apparatus for bonding of two polished substrates includes a plasma source in a ultra-high vacuum (UHV) chamber and a wafer-guiding element to control and guide wafers in the UHV chamber, where after a plasma activation process the wafers are guided and pressed against each other to form a covalent bond between wafer surfaces. The plasma activation process involves deposition of mono-layer or sub-monolayer metallic atom on the surface of substrates. After deposition of metallic layers, a high-force actuation presses the wafers and forms a covalent bond between the wafers. Then, the bonded wafer pair is ion-sliced or thinned to form single crystalline optical thin film. An annealing process oxidizes the deposited metallic layers and produces optically-transparent single crystalline thin film. An optical waveguide may be fabricated by this thin film while utilizing an electro-optic effect to produce optical modulators and other photonic devices.

Abstract: A plasma cell for forming light-sustained plasma includes a transmission element configured to contain a volume of gas, a first terminal flange disposed at or near an opening of the transmission element, a second terminal flange disposed at or near another opening of the transmission element, a floating flange disposed between the first or second terminal flange and the transmission element. The floating flange is movable to compensate for thermal expansion of the transmission element. Further, the floating flange is configured to enclose the internal volume of the transmission element to contain a volume of gas within the transmission element. The transmission element is configured to receive illumination from an illumination source in order to generate plasma within the volume of gas. The transmission element is transparent to a portion of the illumination from the illumination source and a portion of broadband radiation emitted by the plasma.

Abstract: The present disclosure provides methods and systems for bonding multiple wafers. An example system may include a sealable chamber with a first and second substantially vertical post positioned inside of the sealable chamber. The system may also include a first latch connected to the first post via a first pin, wherein the first pin allows the first latch to rotate about the first pin. The system may also include a second latch similarly configured to the first latch. The system may also include a base plate positioned between the first and second posts. The base plate is arranged such that when a first wafer rests on the base plate and a second wafer rests on the first and second latches, moving the base plate from a first position to a second position causes a top surface of the first wafer to contact a bottom surface of the second wafer.

Abstract: A plasma cell for forming light-sustained plasma includes a transmission element configured to contain a volume of gas, a first terminal flange disposed at or near an opening of the transmission element, a second terminal flange disposed at or near another opening of the transmission element, a floating flange disposed between the first or second terminal flange and the transmission element. The floating flange is movable to compensate for thermal expansion of the transmission element. Further, the floating flange is configured to enclose the internal volume of the transmission element to contain a volume of gas within the transmission element. The transmission element is configured to receive illumination from an illumination source in order to generate plasma within the volume of gas. The transmission element is transparent to a portion of the illumination from the illumination source and a portion of broadband radiation emitted by the plasma.

Abstract: A testing apparatus or test jig is configured to accept a electrical device for testing prior to final assembly. In one example, a pair of conductive conveying belts compliantly engage a partially assembled photovoltaic (PV) module by its sides, and electrodes engage orthogonal sides of the module. The test apparatus or jig can be use for a variety of electrical tests, and may, for example be connected to a high potential (HiPot) tester.

Abstract: A testing apparatus or test jig is configured to accept a electrical device for testing prior to final assembly. In one example, a pair of conductive conveying belts compliantly engage a partially assembled photovoltaic (PV) module by its sides, and electrodes engage orthogonal sides of the module. The test apparatus or jig can be use for a variety of electrical tests, and may, for example be connected to a high potential (HiPot) tester.

Abstract: A high flow rate bubbler system and method are provided for producing a stable, easily controllable source of chemical vapors to a downstream process. The bubbler system is equipped with a vaporizer unit connected to its gas outlet tube. This vaporizer unit slows the gas velocity to enhance settling of entrained droplets and contacts the exiting gas with a high thermal mass, heated surfaces to promote heat transfer and evaporation of the entrained droplets.

Abstract: A high flow rate bubbler system and method are provided for producing a stable, easily controllable source of chemical vapors to a downstream process. The bubbler system is equipped with a vaporizer unit connected to its gas outlet tube. This vaporizer unit slows the gas velocity to enhance settling of entrained droplets and contacts the exiting gas with a high thermal mass, heated surfaces to promote heat transfer and evaporation of the entrained droplets.