Patents by Inventor Amir Waxman

Amir Waxman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase locked sideband beams by bias modulation of an external cavity laser diode having a grating
    Patent number: 8743918
    Abstract: A device and a method enabling the enhancing of the modulation efficiency of lasers by matching the modulation frequency and the FSR of the laser. This is optionally achieved by eliminating the internal cavity of a laser diode (103) placed in an external cavity and matching the FSR of the external cavity to the modulation frequency. The modulation index is enhanced to and beyond the point of complete carrier suppression even at high modulation frequency and high beam intensities. The external cavity comprises a grating (107), the cavity length being adjusted with a PZT (108) and a translation stage (109). The laser diode (103) is driven by a bias current (110) from a driver (115) and a modulation current (111) from a modulation driver (116).
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: June 3, 2014
    Assignee: Ben Gurion University of the Negev, Research and Development Authority
    Inventors: Menachem Givon, Amir Waxman
  • PHASE LOCKED SIDEBAND BEAMS BY BIAS MODULATION OF AN EXTERNAL CAVITY LASER DIODE HAVING A GRATING
    Publication number: 20110168913
    Abstract: A device and a method enabling the enhancing of the modulation efficiency of lasers by matching the modulation frequency and the FSR of the laser. This is optionally achieved by eliminating the internal cavity of a laser diode (103) placed in an external cavity and matching the FSR of the external cavity to the modulation frequency. The modulation index is enhanced to and beyond the point of complete carrier suppression even at high modulation frequency and high beam intensities. The external cavity comprises a grating (107), the cavity length being adjusted with a PZT (108) and a translation stage (109). The laser diode (103) is driven by a bias current (110) from a driver (115) and a modulation current (111) from a modulation driver (116).
    Type: Application
    Filed: September 24, 2009
    Publication date: July 14, 2011
    Applicant: BEN GURION UNIVERSITY OF THE NEGEV, RESEARCH AND DEVELOPMENT AUTHORITY
    Inventors: Menachem Givon, Amir Waxman