Abstract: A sensing probe may be formed of a diamond material comprising one or more spin defects that are configured to emit fluorescent light and are located no more than 50 nm from a sensing surface of the sensing probe. The sensing probe may include an optical outcoupling structure formed by the diamond material and configured to optically guide the fluorescent light toward an output end of the optical outcoupling structure. An optical detector may detect the fluorescent light that is emitted from the spin defects and that exits through the output end of the optical outcoupling structure after being optically guided therethrough. A mounting system may hold the sensing probe and control a distance between the sensing surface of the sensing probe and a surface of a sample while permitting relative motion between the sensing surface and the sample surface.

Abstract: A sensing probe may be formed of a diamond material comprising one or more spin defects that are configured to emit fluorescent light and are located no more than 50 nm from a sensing surface of the sensing probe. The sensing probe may include an optical outcoupling structure formed by the diamond material and configured to optically guide the fluorescent light toward an output end of the optical outcoupling structure. An optical detector may detect the fluorescent light that is emitted from the spin defects and that exits through the output end of the optical outcoupling structure after being optically guided therethrough. A mounting system may hold the sensing probe and control a distance between the sensing surface of the sensing probe and a surface of a sample while permitting relative motion between the sensing surface and the sample surface.

Abstract: A sensing probe may be formed of a diamond material comprising one or more spin defects that are configured to emit fluorescent light and are located no more than 50 nm from a sensing surface of the sensing probe. The sensing probe may include an optical outcoupling structure formed by the diamond material and configured to optically guide the fluorescent light toward an output end of the optical outcoupling structure. An optical detector may detect the fluorescent light that is emitted from the spin defects and that exits through the output end of the optical outcoupling structure after being optically guided therethrough. A mounting system may hold the sensing probe and control a distance between the sensing surface of the sensing probe and a surface of a sample while permitting relative motion between the sensing surface and the sample surface.

Abstract: A method of manufacturing, characterizing, mounting, and a system of a probe may include a pillar having a taper angle and at least one engineered defect. The taper angle may be formed using crystallographic- or etching-based techniques. The probe may be mounted to an AFM chip. Furthermore, an RF waveguide may be connected to the AFM chip for providing RF excitation.

Abstract: A sensing probe may be formed of a diamond material comprising one or more spin defects that are configured to emit fluorescent light and are located no more than 50 nm from a sensing surface of the sensing probe. The sensing probe may include an optical outcoupling structure formed by the diamond material and configured to optically guide the fluorescent light toward an output end of the optical outcoupling structure. An optical detector may detect the fluorescent light that is emitted from the spin defects and that exits through the output end of the optical outcoupling structure after being optically guided therethrough. A mounting system may hold the sensing probe and control a distance between the sensing surface of the sensing probe and a surface of a sample while permitting relative motion between the sensing surface and the sample surface.

Abstract: A method of manufacturing, characterizing, mounting, and a system of a probe may include a pillar having a taper angle and at least one engineered defect. The taper angle may be formed using crystallographic- or etching-based techniques. The probe may be mounted to an AFM chip. Furthermore, an RF waveguide may be connected to the AFM chip for providing RF excitation.

Abstract: A sensing probe may be formed of a diamond material comprising one or more spin defects that are configured to emit fluorescent light and are located no more than 50 nm from a sensing surface of the sensing probe. The sensing probe may include an optical outcoupling structure formed by the diamond material and configured to optically guide the fluorescent light toward an output end of the optical outcoupling structure. An optical detector may detect the fluorescent light that is emitted from the spin defects and that exits through the output end of the optical outcoupling structure after being optically guided therethrough. A mounting system may hold the sensing probe and control a distance between the sensing surface of the sensing probe and a surface of a sample while permitting relative motion between the sensing surface and the sample surface.

Abstract: A sensing probe may be formed of a diamond material comprising one or more spin defects that are configured to emit fluorescent light and are located no more than 50 nm from a sensing surface of the sensing probe. The sensing probe may include an optical outcoupling structure formed by the diamond material and configured to optically guide the fluorescent light toward an output end of the optical outcoupling structure. An optical detector may detect the fluorescent light that is emitted from the spin defects and that exits through the output end of the optical outcoupling structure after being optically guided therethrough. A mounting system may hold the sensing probe and control a distance between the sensing surface of the sensing probe and a surface of a sample while permitting relative motion between the sensing surface and the sample surface.

Abstract: A method for performing sub-nanometer three-dimensional magnetic resonance imaging of a sample under ambient conditions using a diamond having at least one shallowly planted nitrogen-vacancy (NV) center. A driving radio-frequency (RF) signal and a microwave signal are applied to provide independent control of the NV spin and the target dark spins. A magnetic-field gradient is applied to the sample with a scanning magnetic tip to provide a narrow spatial volume in which the target dark electronic spins are on resonance with the driving RF field. The sample is controllably scanned by moving the magnetic tip to systematically bring non-resonant target dark spins into resonance with RF signal. The dark spins are measured and mapped by detecting magnetic resonance of said nitrogen-vacancy center at each of said different magnetic tip positions. The dark-spin point-spread-function for imaging the dark spins is directly measured by the NV center.

Abstract: A synthetic diamond material comprising one or more spin defects having a full width half maximum intrinsic inhomogeneous zero phonon line width of no more than 100 MHz. The method for obtain such a material involves a multi-stage annealing process.

Abstract: A synthetic diamond material comprising one or more spin defects having a full width half maximum intrinsic inhomogeneous zero phonon line width of no more than 100 MHz. The method for obtain such a material involves a multi-stage annealing process.

Abstract: A sensing probe may be formed of a diamond material comprising one or more spin defects that are configured to emit fluorescent light and are located no more than 50 nm from a sensing surface of the sensing probe. The sensing probe may include an optical outcoupling structure formed by the diamond material and configured to optically guide the fluorescent light toward an output end of the optical outcoupling structure. An optical detector may detect the fluorescent light that is emitted from the spin defects and that exits through the output end of the optical outcoupling structure after being optically guided therethrough. A mounting system may hold the sensing probe and control a distance between the sensing surface of the sensing probe and a surface of a sample while permitting relative motion between the sensing surface and the sample surface.

Abstract: The present invention discloses a novel magnetic sensor device performing direct magnetic field imaging, comprising a probe having a conical tip portion which is configured as a sensor having two superconductors separated by a thin non-superconducting layer (such as a Josephson junction based sensor), where the non-superconducting layer is located at the apex portion of said conical tip, thereby defining electron tunneling region(s) at said apex portion. The technique of the present invention enables the sensor device to be very small and to be brought very close to the sample surface.

Abstract: A method is disclosed for increasing the sensitivity of a solid state electronic spin based magnetometer that makes use of individual electronic spins or ensembles of electronic spins in a solid-state lattice, for example NV centers in a diamond lattice. The electronic spins may be configured to undergo a Zeeman shift in energy level when photons of light are applied to the electronic spins followed by pulses of an RF field that is substantially transverse to the magnetic field being detected. The method may include coherently controlling the electronic spins by applying to the electronic spins a sequence of RF pulses that dynamically decouple the electronic spins from mutual spin-spin interactions and from interactions with the lattice. The sequence of RF pulses may be a Hahn spin-echo sequence, a Can Purcell Meiboom Gill sequence, or a MREV8 pulse sequence, by way of example.

Abstract: A method is disclosed for increasing the sensitivity of a solid state electronic spin based magnetometer that makes use of individual electronic spins or ensembles of electronic spins in a solid-state lattice, for example NV centers in a diamond lattice. The electronic spins may be configured to undergo a Zeeman shift in energy level when photons of light are applied to the electronic spins followed by pulses of an RF field that is substantially transverse to the magnetic field being detected. The method may include coherently controlling the electronic spins by applying to the electronic spins a sequence of RF pulses that dynamically decouple the electronic spins from mutual spin-spin interactions and from interactions with the lattice. The sequence of RF pulses may be a Hahn spin-echo sequence, a Can Purcell Meiboom Gill sequence, or a MREV8 pulse sequence, by way of example.

Abstract: The present invention discloses a novel magnetic sensor device performing direct magnetic field imaging, comprising a probe having a conical tip portion which is configured as a sensor having two superconductors separated by a thin non-superconducting layer (such as a Josephson junction based sensor), where the non-superconducting layer is located at the apex portion of said conical tip, thereby defining electron tunneling region(s) at said apex portion. The technique of the present invention enables the sensor device to be very small and to be brought very close to the sample surface.