Abstract: A true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, wherein a logical behavior is determined by the third and fourth input signals. A method for operating a true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising operating at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, determining a logical behavior by the third and fourth input signals.

Abstract: A true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, wherein a logical behavior is determined by the third and fourth input signals. A method for operating a true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising operating at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, determining a logical behavior by the third and fourth input signals.

Abstract: Techniques for generating a layout of a multi-port memory cell are provided. A specification describing at least on port within a memory cell is defined. A base memory cell including at least one extension point is modeled. A port that interfaces with the base memory cell is identified from the specification. An electrical interface between the identified port and an extension point of the base memory cell is modeled. In some embodiments, a design bucket is selected from among a predefined set of design buckets based on a count of ports within the memory cell, as described by the specification. Each design bucket corresponding to a respective layout template including the base memory cell and a respective maximum count of ports. Each electrical interface including a port described in the specification of the memory cell is modeled based on the selected design bucket and the respective layout template.

Abstract: Techniques for generating a layout of a multi-port memory cell are provided. A specification describing at least on port within a memory cell is defined. A base memory cell including at least one extension point is modeled. A port that interfaces with the base memory cell is identified from the specification. An electrical interface between the identified port and an extension point of the base memory cell is modeled. In some embodiments, a design bucket is selected from among a predefined set of design buckets based on a count of ports within the memory cell, as described by the specification. Each design bucket corresponding to a respective layout template including the base memory cell and a respective maximum count of ports. Each electrical interface including a port described in the specification of the memory cell is modeled based on the selected design bucket and the respective layout template.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: Disclosed aspects include a content addressable memory device comprising at least two memory banks connectable to a global search line. Each memory bank comprises at least two content addressable memory cells. Each content addressable memory cell can store one bit. Each content addressable memory cell is coupled to a respective local search line. Aspects include a bank connection circuitry configured for coupling the global search line to the local search lines in dependence of a bank prediction signal line. The bank connection circuitry of the content addressable memory device may comprise bank hold circuitry for storing a search value transmitted by the global search line.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A method of increasing a drain to source voltage measured at an access pass-gate to a SRAM circuit in a SRAM memory array, including increasing a low voltage from a low voltage source powering said SRAM circuit, and increasing a high voltage from a high voltage source powering the SRAM circuit.

Abstract: A method of increasing a drain to source voltage measured at an access pass-gate to a SRAM circuit in a SRAM memory array, including increasing a low voltage from a low voltage source powering said SRAM circuit, and increasing a high voltage from a high voltage source powering the SRAM circuit.

Abstract: A novel and useful mechanism for reducing current leakage in a static random access memory array which significantly reduces the power requirements of the memory array. The method enables the steady state of all local and global bit lines in an SRAM array to be discharged during both active and inactive modes. The memory array includes memory cells having an N channel field effect transistor read stack. A mechanism is provided to evaluate data from memory cells where the steady state of local and global read bit lines is discharged.

Abstract: A method and apparatus implementing domino static random access memory (SRAM) leakage current reduction include a local evaluation circuit coupled to true and complement bit lines of a pair of local SRAM cell groups, receives precharge signals and provides an output connected to a global dot line. A sleep input is applied to SRAM sleep logic and a write driver including sleep control. Data true and data complement outputs of the write driver are forced to a respective selected level to discharge the bit lines and global dot lines when the sleep input transitions high. Discharging the bit lines and global dot lines is implemented through gating in the write driver without requiring any additional devices in the local evaluation circuit.

Abstract: A novel and useful mechanism for reducing current leakage in a static random access memory array which significantly reduces the power requirements of the memory array. The method enables the steady state of all local and global bit lines in an SRAM array to be discharged during both active and inactive modes. The memory array consists of memory cells having an N channel field effect transistor read stack. A mechanism is provided to evaluate data from memory cells where the steady state of local and global read bit lines is discharged.

Abstract: A method and apparatus implementing domino static random access memory (SRAM) leakage current reduction include a local evaluation circuit coupled to true and complement bit lines of a pair of local SRAM cell groups, receives precharge signals and provides an output connected to a global dot line. A sleep input is applied to SRAM sleep logic and a write driver including sleep control. Data true and data complement outputs of the write driver are forced to a respective selected level to discharge the bit lines and global dot lines when the sleep input transitions high. Discharging the bit lines and global dot lines is implemented through gating in the write driver without requiring any additional devices in the local evaluation circuit.