Patents by Inventor Amit A. Dikshit

Amit A. Dikshit has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of predicting unity gain frequency with direct current and/or low frequency parameters
    Patent number: 10090209
    Abstract: Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: October 2, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Amit A. Dikshit, Tamilmani Ethirajan, Shrinivas J. Pandharpure, Vaidyanathan T. Subramanian, Josef S. Watts
  • METHODS OF PREDICTING UNITY GAIN FREQUENCY WITH DIRECT CURRENT AND/OR LOW FREQUENCY PARAMETERS
    Publication number: 20170271213
    Abstract: Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).
    Type: Application
    Filed: June 6, 2017
    Publication date: September 21, 2017
    Inventors: Amit A. Dikshit, Tamilmani Ethirajan, Shrinivas J. Pandharpure, Vaidyanathan T. Subramanian, Josef S. Watts
  • Methods of predicting unity gain frequency with direct current and/or low frequency parameters
    Patent number: 9704763
    Abstract: Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).
    Type: Grant
    Filed: January 2, 2014
    Date of Patent: July 11, 2017
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Amit A. Dikshit, Tamilmani Ethirajan, Shrinivas J. Pandharpure, Vaidyanathan T. Subramanian, Josef S. Watts
  • METHODS OF PREDICTING UNITY GAIN FREQUENCY WITH DIRECT CURRENT AND/OR LOW FREQUENCY PARAMETERS
    Publication number: 20150187665
    Abstract: Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).
    Type: Application
    Filed: January 2, 2014
    Publication date: July 2, 2015
    Applicant: International Business Machines Corporation
    Inventors: Amit A. Dikshit, Tamilmani Ethirajan, Shrinivas J. Pandharpure, Vaidyanathan T. Subramanian, Josef S. Watts