Patents by Inventor Amit Berman

Amit Berman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942965
    Abstract: A soft-decision decoding computes a first syndrome polynomial in accordance with a received word, computes a second syndrome polynomial by multiplying the first syndrome polynomial by a locator polynomial based on locations of erasures within the received word, finds a basis and private solution to an affine space of polynomials that solve key equations based on the second syndrome polynomial, determines a weak set of a locations of symbols in the received word with confidence below a certain confidence level, computes a matrix from the basis, the private solution and the weak set, determines sub-matrices in the matrix whose rank is equal to a rank of the matrix, determines error locator polynomial (ELP) candidates from the sub-matrices, the basis, and the private solution, and corrects the received word using a selected one of the ELP candidates.
    Type: Grant
    Filed: October 11, 2022
    Date of Patent: March 26, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Avner Dor, Yaron Shany, Ariel Doubchak, Amit Berman
  • Patent number: 11915766
    Abstract: A method, apparatus, non-transitory computer readable medium, and system for selecting program voltages for a memory device are described. Embodiments of the method, apparatus, non-transitory computer readable medium, and system may map a set of information bits to voltage levels of one or more memory cells based on a plurality of embedding parameters, program the set of information bits into the one or more memory cells based on the mapping, detect the voltage levels of the one or more memory cells to generate one or more detected voltage levels, and identify a set of predicted information bits based on the one or more detected voltage levels using a neural network comprising a plurality of network parameters, wherein the network parameters are trained together with the embedding parameters.
    Type: Grant
    Filed: January 9, 2023
    Date of Patent: February 27, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Amit Berman, Evgeny Blaichman
  • Publication number: 20240045958
    Abstract: A storage system, including a host device; and a storage device including a nonvolatile memory and at least one processor configured to implement a storage internal protection (SIP) module, wherein the SIP module is configured to: obtain, from the host device, a plurality of storage commands corresponding to the nonvolatile memory, filter the plurality of storage commands to obtain a filtered plurality of storage commands, apply information about the filtered plurality of storage commands to a machine-learning cryptocurrency mining (CM) detection algorithm, and based on the machine-learning CM detection algorithm indicating that a CM operation is detected, provide a notification to the host device.
    Type: Application
    Filed: August 2, 2022
    Publication date: February 8, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexander BUNIN, Evgeny BLAICHMAN, Amit BERMAN
  • Publication number: 20240037233
    Abstract: A storage system, including a host device; and a storage device including a memory and at least one processor configured to implement a storage internal protection (SIP) module, wherein the SIP module is configured to: obtain, from the host device, a plurality of storage commands corresponding to the memory, filter the plurality of storage commands to obtain a filtered plurality of storage commands, apply information about the filtered plurality of storage commands to a machine-learning ransomware detection algorithm, and based on the machine-learning ransomware detection algorithm indicating that a ransomware operation is detected, provide a notification to the host device.
    Type: Application
    Filed: July 29, 2022
    Publication date: February 1, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ariel DOUBCHAK, Noam LIVNE, Amit BERMAN
  • Publication number: 20230421176
    Abstract: A machine-learning (ML) error-correcting code (ECC) controller may include a hard-decision (HD) ECC decoder optimized for high-speed data throughput, a soft-decision (SD) ECC decoder optimized for high-correctability data throughput, and a machine-learning equalizer (MLE) configured to variably select one of the HD ECC decoder or the SD ECC decoder for data throughput. An embodiment of the ML ECC controller may provide speed-optimized HD throughput based on a linear ECC. The linear ECC may be a soft Hamming permutation code (SHPC).
    Type: Application
    Filed: July 31, 2023
    Publication date: December 28, 2023
    Inventors: Ariel DOUBCHAK, Dikla SHAPIRO, Evgeny BLAICHMAN, Lital COHEN, Amit BERMAN
  • Patent number: 11855658
    Abstract: A processing circuit is configured to: construct a first locator polynomial for a Reed-Solomon codeword to identify locations of erasures in the Reed-Solomon codeword; determine a first syndrome of the Reed-Solomon codeword; calculate a first error evaluator polynomial from the first syndrome and the first locator polynomial; and perform error detection based on the first error evaluator polynomial to determine presence of errors in the Reed-Solomon codeword. When presence of errors in the Reed-Solomon codeword is not detected in the error detection, the processing circuit bypasses updating the first locator polynomial and proceeds to completing decoding of the Reed-Solomon codeword, but when presence of errors in the Reed-Solomon codeword is detected in the error detection, the system first updates the first locator polynomial to a second locator polynomial in a process with reduced complexity compared to the common one, before completing decoding of the Reed-Solomon codeword.
    Type: Grant
    Filed: August 5, 2022
    Date of Patent: December 26, 2023
    Inventors: Amit Berman, Avner Dor, Yaron Shany, Ilya Shapir, Ariel Doubchak
  • Patent number: 11855772
    Abstract: A storage system, including a storage device configured to store a plurality of encoded values, wherein each value of the plurality of encoded values has a predetermined value length and is within a predetermined range, and wherein the predetermined range is not a power of 2; and at least one processor configured to: group the plurality of encoded values into a codeword; obtain a plurality of bit chunks, wherein each bit chunk of the plurality of bit chunks represents a corresponding encoded value of the plurality of encoded values, and wherein a length of the each bit chunk is selected from among one or more predetermined bit chunk lengths which are determined based on the predetermined range; select a variable-length prefix from among a plurality of variable-length prefixes, wherein the variable-length prefix indicates bit chunk lengths of the plurality of bit chunks; obtain a compressed codeword including the variable-length prefix and the plurality of bit chunks; and decode the plurality of encoded values
    Type: Grant
    Filed: December 15, 2021
    Date of Patent: December 26, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Amit Berman
  • Publication number: 20230412197
    Abstract: A method of simplified successive cancellation list (SSCL) error decoding of S-polar codes includes representing an S-polar code as a perfect binary tree; providing a node v a vector ?v(l) of soft information from a parent node; computing a vector ?vl(l) of soft information for a left child of node v; providing node v with a vector ?vl(l) of hard decisions from the left child and using it with ?v(l) to create a soft information vector ?vr(l) and passing it to a right child of node v; providing node v with a vector ?vr(l) of hard decisions from its right child and using it with ?vl(l) to create a hard decision vector, ?v of hard decisions, and passing it to its parent node; updating, when v is a ith leaf of the perfect tree, two path metrics, and selecting paths obtained by expanding current paths with a lowest path metric.
    Type: Application
    Filed: June 16, 2022
    Publication date: December 21, 2023
    Inventors: Amit Berman, Sarit Buzaglo, Ariel Doubchak
  • Patent number: 11848687
    Abstract: A method of simplified successive cancellation list (SSCL) error decoding of S-polar codes includes representing an S-polar code as a perfect binary tree; providing a node v a vector ?v(l) of soft information from a parent node; computing a vector ?vl(l) of soft information for a left child of node v; providing node v with a vector ?vl(l) of hard decisions from the left child and using it with ?v(l) to create a soft information vector ?vr(l) and passing it to a right child of node v; providing node v with a vector ?vr(l) of hard decisions from its right child and using it with ?vl(l) to create a hard decision vector, ?v of hard decisions, and passing it to its parent node; updating, when v is a ith leaf of the perfect tree, two path metrics, and selecting paths obtained by expanding current paths with a lowest path metric.
    Type: Grant
    Filed: June 16, 2022
    Date of Patent: December 19, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Amit Berman, Sarit Buzaglo, Ariel Doubchak
  • Publication number: 20230370090
    Abstract: A method of correcting data stored in a memory device includes: applying an iterative decoder to the data; determining a total number of rows in first data the decoder attempted to correct; estimating first visible error rows among the total number that continue to have an error after the attempt; estimating residual error rows among the total number that no longer have an error after the attempt; determining second visible error rows in second data of the decoder that continue to have an error by permuting indices of the residual error rows according to a permutation; and correcting the first data using the first visible error rows.
    Type: Application
    Filed: July 25, 2023
    Publication date: November 16, 2023
    Inventors: Ariel DOUBCHAK, Avner DOR, Yaron SHANY, Tal PHILOSOF, Yoav SHERESHEVSKI, Amit BERMAN
  • Publication number: 20230336188
    Abstract: A memory system includes a plurality of memory cells each storing multiple bits and a memory controller having a processor. The memory controller is configured to read outputs from the memory cells in response to a read command from a host to generate first raw data of a first page and second raw data of a second page adjacent to the first page. The memory controller is further configured to perform a hard decision (HD) decoding on the first raw data to generate first decoded data. The processor is configured to apply the first decoded data and the second raw data as input features to a machine learning algorithm to generate reliability information. The memory controller is further configured to perform a HD decoding on the second raw data using the reliability information to generate second decoded data.
    Type: Application
    Filed: April 14, 2022
    Publication date: October 19, 2023
    Inventor: Amit BERMAN
  • Patent number: 11791840
    Abstract: A memory system includes a plurality of memory cells each storing multiple bits and a memory controller having a processor. The memory controller is configured to read outputs from the memory cells in response to a read command from a host to generate first raw data of a first page and second raw data of a second page adjacent to the first page. The memory controller is further configured to perform a hard decision (HD) decoding on the first raw data to generate first decoded data. The processor is configured to apply the first decoded data and the second raw data as input features to a machine learning algorithm to generate reliability information. The memory controller is further configured to perform a HD decoding on the second raw data using the reliability information to generate second decoded data.
    Type: Grant
    Filed: April 14, 2022
    Date of Patent: October 17, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Amit Berman
  • Publication number: 20230308208
    Abstract: A storage system, including a storage device configured to store a plurality of encoded values, wherein each value of the plurality of encoded values has a predetermined value length and is within a predetermined range, and wherein the predetermined range is not a power of 2; and at least one processor configured to: group the plurality of encoded values into a codeword; obtain a plurality of bit chunks, wherein each bit chunk of the plurality of bit chunks represents a corresponding encoded value of the plurality of encoded values, and wherein a length of the each bit chunk is selected from among one or more predetermined bit chunk lengths which are determined based on the predetermined range; select a variable-length prefix from among a plurality of variable-length prefixes, wherein the variable-length prefix indicates bit chunk lengths of the plurality of bit chunks; obtain a compressed codeword including the variable-length prefix and the plurality of bit chunks; and decode the plurality of encoded values
    Type: Application
    Filed: December 15, 2021
    Publication date: September 28, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Amit BERMAN
  • Publication number: 20230308115
    Abstract: A method of correcting data stored in a memory device includes: applying an iterative decoder to the data; determining a total number of rows in first data the decoder attempted to correct; estimating first visible error rows among the total number that continue to have an error after the attempt; estimating residual error rows among the total number that no longer have an error after the attempt; determining second visible error rows in second data of the decoder that continue to have an error by permuting indices of the residual error rows according to a permutation; and correcting the first data using the first visible error rows.
    Type: Application
    Filed: March 28, 2022
    Publication date: September 28, 2023
    Inventors: Ariel DOUBCHAK, Avner Dor, Yaron Shany, Tal Philosof, Yoav Shereshevski, Amit Berman
  • Publication number: 20230298674
    Abstract: An storage device is provided. The storage device includes: a nonvolatile memory; and at least one processor configured to: obtain an input symbol to be stored in a target memory cell among a plurality of memory cells of the nonvolatile memory; obtain cell features of the plurality of memory cells; determine a target voltage for the target memory cell based on the input symbol and the cell features of the plurality of memory cells; and provide the target voltage to the target memory cell.
    Type: Application
    Filed: March 17, 2022
    Publication date: September 21, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Amit Berman, Gari Fuks, Evgeny Blaichman
  • Patent number: 11750221
    Abstract: A method of correcting data stored in a memory device includes: applying an iterative decoder to the data; determining a total number of rows in first data the decoder attempted to correct; estimating first visible error rows among the total number that continue to have an error after the attempt; estimating residual error rows among the total number that no longer have an error after the attempt; determining second visible error rows in second data of the decoder that continue to have an error by permuting indices of the residual error rows according to a permutation; and correcting the first data using the first visible error rows.
    Type: Grant
    Filed: March 28, 2022
    Date of Patent: September 5, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ariel Doubchak, Avner Dor, Yaron Shany, Tal Philosof, Yoav Shereshevski, Amit Berman
  • Patent number: 11742879
    Abstract: A machine-learning (ML) error-correcting code (ECC) controller may include a hard-decision (HD) ECC decoder optimized for high-speed data throughput, a soft-decision (SD) ECC decoder optimized for high-correctability data throughput, and a machine-learning equalizer (MLE) configured to variably select one of the HD ECC decoder or the SD ECC decoder for data throughput. An embodiment of the ML ECC controller may provide speed-optimized HD throughput based on a linear ECC. The linear ECC may be a soft Hamming permutation code (SHPC).
    Type: Grant
    Filed: October 6, 2021
    Date of Patent: August 29, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ariel Doubchak, Dikla Shapiro, Evgeny Blaichman, Lital Cohen, Amit Berman
  • Publication number: 20230238074
    Abstract: A memory system includes a memory device and a memory controller. The memory device includes a plurality of memory cells. The memory controller includes an error correction code (ECC) circuit. The ECC circuit is configured to determine data rows of first write data that are not all zeros and store the determined data rows in buffer rows of a buffer along with corresponding row indexes. The memory controller is configured to write second data based on the buffer to the memory device.
    Type: Application
    Filed: April 3, 2023
    Publication date: July 27, 2023
    Inventor: AMIT BERMAN
  • Patent number: 11711099
    Abstract: Systems, devices, and methods for encoding information bits for storage, including encoding information bits and balance bits to obtain a first bit chunk of a first arrangement; permuting the first bit chunk to obtain a second bit chunk of a second arrangement; encoding the second bit chunk to obtain a third bit chunk of the second arrangement; permuting a first portion of the third bit chunk to obtain a fourth bit chunk of the first arrangement, and encoding the fourth bit chunk to obtain a fifth bit chunk of the first arrangement; permuting a second portion of the third bit chunk, and adjusting the balance bits based on the fifth bit chunk and the permutated second portion of the third bit chunk; adjusting the first arrangement based on the adjusted balance bits, and obtaining a codeword based on the adjusted first arrangement; and transmitting the codeword to a storage device.
    Type: Grant
    Filed: March 23, 2022
    Date of Patent: July 25, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Lior Kissos, Yaron Shany, Amit Berman, Ariel Doubchak
  • Publication number: 20230223958
    Abstract: A method for Bose-Chaudhuri-Hocquenghem (BCH) soft error decoding includes receiving a codeword x, wherein the received codeword x has ?=t+r errors for some r?1; computing a minimal monotone basis {?i(x)}1?i?r+1?F[x] of an affine space V={?(x)?F[x]:?(x)·S(x)=??(x) (mod x2t), ?(0)=1, deg(?(x)?t+r}, wherein ?(x) is an error locator polynomial and S(x) is a syndrome; computing a matrix A?(?j(?i))i?[w],j?[r+1], wherein W={?1, . . . , ?w} is a set of weak bits in x; constructing a submatrix of r+1 rows from sub matrices of r+1 rows of the subsets of A such that the last column is a linear combination of the other columns; forming a candidate error locating polynomial using coefficients of the minimal monotone basis that result from the constructed submatrix; performing a fast Chien search to verify the candidate error locating polynomial; and flipping channel hard decision at error locations found in the candidate error locating polynomial.
    Type: Application
    Filed: January 7, 2022
    Publication date: July 13, 2023
    Inventors: Avner Dor, Yaron Shany, Ariel Doubchak, Amit Berman