Abstract: The present disclosure relates to a composite of sintered mullite reinforced corundum granules and a method for its preparation. The composite comprises mullite and corundum in an interlocking microstructure. The process for preparing the composite involves the steps of admixing the raw materials followed by sintering to obtain the composite comprising sintered mullite reinforced corundum granules.

Abstract: The present disclosure relates to a composite of sintered mullite reinforced corundum granules and a method for its preparation. The composite comprises mullite and corundum in an interlocking microstructure. The process for preparing the composite involves the steps of admixing the raw materials followed by sintering to obtain the composite comprising sintered mullite reinforced corundum granules.

Abstract: The present disclosure relates to a composite of sintered mullite reinforced corundum granules and a method for its preparation. The composite comprises mullite and corundum in an interlocking microstructure. The process for preparing the composite involves the steps of admixing the raw materials followed by sintering to obtain the composite comprising sintered mullite reinforced corundum granules.

Abstract: Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

Abstract: Methods of depositing thin, low dielectric constant layers that are effective diffusion barriers on metal interconnects of semiconductor circuits are described. A self-assembled monolayer (SAM) of molecules each having a head moiety and a tail moiety are deposited on the metal. The SAM molecules self-align, wherein the head moiety is formulated to selectively bond to the metal layer leaving the tail moiety disposed at a distal end of the molecule. A dielectric layer is subsequently deposited on the SAM, chemically bonding to the tail moiety of the SAM molecules.

Abstract: Embodiments of the present invention generally relate to methods for forming a flowable carbon-containing film on a substrate. In one embodiment, an oxygen-containing gas is flowed into a remote plasma region to produce oxygen-containing plasma effluents, and a carbon-containing gas is combined with the oxygen-containing plasma effluents in a substrate processing region which contains the substrate. A carbon-containing film is formed in trenches which are formed on the substrate and a low K dielectric material is deposited on the carbon-containing film in the trenches. The carbon-containing film is decomposed by an UV treatment and airgaps are formed in the trenches under the low K dielectric material.

Abstract: Methods of depositing thin, low dielectric constant layers that are effective diffusion barriers on metal interconnects of semiconductor circuits are described. A self-assembled monolayer (SAM) of molecules each having a head moiety and a tail moiety are deposited on the metal. The SAM molecules self-align, wherein the head moiety is formulated to selectively bond to the metal layer leaving the tail moiety disposed at a distal end of the molecule. A dielectric layer is subsequently deposited on the SAM, chemically bonding to the tail moiety of the SAM molecules.

Abstract: Methods for depositing metal-polymer composite materials atop a substrate are provided herein. In some embodiments, a method of depositing a metal-polymer composite material atop a substrate disposed in a hot wire chemical vapor deposition (HWCVD) chamber may include flowing a current through a plurality of filaments disposed in the HWCVD chamber, the filaments comprising a metal to be deposited atop a substrate; providing a process gas comprising an initiator and a monomer to the HWCVD chamber; and depositing a metal-polymer composite material on the substrate using species decomposed from the process gas and metal atoms ejected from the plurality of filaments.

Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

Abstract: Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.

Abstract: The invention relates to a method of making a composite sheet. A plurality of layers is first assembled, each layer being comprised of an untreated, unidirectional array of strands. The assembled layers are then placed adjacent one another to form an assembled sheet, with adjacent layers being in a non-parallel orientation, and without any of the layers having been treated with a matrix or binding component. The assembled sheet is then impregnated with a matrix component, which comprises a binding component and may also comprise a radiation-absorbing component.

Abstract: Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.

Abstract: A centralized emission and energy management system is implemented via a server that is accessible to a client organization. In response to a request to recommend best practices for an organizational unit to reduce environmental impact or energy usage, the system selects relevant best practices based on reduction goals and the organizational unit's particular industry. Based on attribute values for the relevant best practices and the organizational unit, the system filters/ranks the relevant best practices to form recommended best practices. The system may transmit a forecast of energy savings, cost impacts, and environmental impacts over an implementation time period for a draft procedure created from a recommended best practice. The system may generate a request for proposal (RFP) including an approved procedure to a vendor. The system may maintain ratings and feedbacks on the approved procedure and the vendor.

Abstract: The invention relates to a method of making a composite sheet. A plurality of layers is first assembled, each layer being comprised of an untreated, unidirectional array of strands. The assembled layers are then placed adjacent one another to form an assembled sheet, with adjacent layers being in a non-parallel orientation, and without any of the layers having been treated with a matrix or binding component. The assembled sheet is then impregnated with a matrix component, which comprises a binding component and may also comprise a radiation-absorbing component.

Abstract: Procedures for agnostically redirecting WAN link communications for WAN link throughput optimization are described. In an example, a WAN communication, targeted to a remote resource, is redirected to a local port proxy. The local port proxy may enforce WAN link policy on the communication to optimize communication flows occurring over the physical WAN link thereby increasing the relative efficiency of the physical WAN link. A remote port proxy may be included for forwarding the communication to the target remote resource via a separate communication connection.

Abstract: Methods, systems, and computer program products for monitoring tunneled Internet protocol (IP) traffic on a high bandwidth IP network are disclosed. According to one method, a copy of a tunneled IP packet traversing an IP communications network is generated. The packet may include a payload having tunneled protocol address information. The tunneled protocol address information and the payload portion of the copied IP packet is read. The packet is distributed, using the tunneled protocol address information, to a function for providing at least one of packet classification and network monitoring service for the packet.

Abstract: Displaying images having pixels thereof that are meant to be transparent is disclosed. In one embodiment, a method includes a first stage and a second stage. The first stage is performed once, to transform the image and generate a mask thereof. The second stage is performed each time the image is to be displayed, to copy the transformed image and the mask onto the display. In one embodiment, the transparent image is shrunk and/or stretched when displayed. The cases of animated images and dithering for alpha blending are also disclosed and covered by the invention.

Abstract: This invention relates to a high temperature melting composition and a method of using the composition for brazing high temperature niobium-based substrates, such as niobium-based refractory metal-intermetallic compositions (RMIC), including but not restricted to niobium-silicide composite alloys. The high temperature melting composition can include one or more alloys. The alloys include a base element selected from titanium, tantalum, niobium, hafnium, silicon, and germanium. The alloys also include at least one secondary element that is different from the base element. The secondary element can be selected from chromium, aluminum, niobium, boron, silicon, germanium and mixtures thereof. When two or more alloys are included in the composition, it is preferable, but not required, to select at least one lower melting alloy and at least one higher melting alloy. The composition is preferably a homogeneous mixture of the two or more alloys combined in powder form.

Abstract: Operating system enhancements that enable an application program to create and perform graphics operations on device-independent bitmaps (DIBs) efficiently. The enhancements are in the form of functions that return to the application program a handle to the DIB and a pointer to the location of the DIB in memory. With the handle, the application program can use the capabilities of the operating system to perform graphics operations on the DIB. With the pointer, the application program can use its own drawing capabilities and address the DIB directly. The operating system enhancements also streamline the design and content of graphics drivers such as display drivers by placing basic graphics functions in a graphics engine that communicates with the graphics driver. Simple graphics operations are passed from the graphics driver to the graphics engine, allowing the driver to be limited to more complex operations that utilize special characteristics of graphics hardware associated with the driver.