Patents by Inventor Amit Kumar BANSAL

Amit Kumar BANSAL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12183553
    Abstract: The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl includes a first surface having a first equalizer hole. A passage couples the processing volume to the purge volume via the first equalizer hole and an inlet. The passage is positioned above the first equalizer hole. The chamber base has a purge port coupleable to a purge gas line for supplying a purge gas to the purge volume. A baffle is disposed in the purge volume at a height above the purge port, and is configured to deflect a trajectory of the purge gas.
    Type: Grant
    Filed: June 3, 2020
    Date of Patent: December 31, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Nitin Pathak, Kartik Shah, Amit Kumar Bansal, Tuan Anh Nguyen, Juan Carlos Rocha, David Blahnik
  • Publication number: 20240368756
    Abstract: The present disclosure relates to cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a method includes positioning a pedestal disposed in a substrate processing chamber in a first vertical position for a first time period, directing cleaning fluid into the internal volume of the substrate processing chamber located above the faceplate, diverting a portion of the cleaning fluid to the distribution ring and into the internal volume located below the faceplate by opening up the isolation valve, and positioning the pedestal in one or more additional vertical positions while the isolation valve is opened, the one or more additional vertical positions being different than the first vertical position.
    Type: Application
    Filed: June 14, 2024
    Publication date: November 7, 2024
    Inventors: Yuxing ZHANG, Tuan Anh (Mike) NGUYEN, Amit Kumar BANSAL, Nitin PATHAK, Saket RATHI, Thomas RUBIO, Udit Suryakant KOTAGI, Badri N. RAMAMURTHI, Dharma Ratnam SRICHURNAM
  • Patent number: 12110590
    Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.
    Type: Grant
    Filed: October 18, 2023
    Date of Patent: October 8, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shailendra Srivastava, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Daemian Raj Benjamin Raj, Amit Kumar Bansal, Juan Carlos Rocha-Alvarez, Gregory Eugene Chichkanoff, Xinhai Han, Masaki Ogata, Kristopher Enslow, Wenjiao Wang
  • Patent number: 12087555
    Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.
    Type: Grant
    Filed: December 16, 2022
    Date of Patent: September 10, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Kalyanjit Ghosh, Shailendra Srivastava, Tejas Ulavi, Yusheng Zhou, Amit Kumar Bansal, Sanjeev Baluja
  • Patent number: 12012653
    Abstract: The present disclosure relates to a cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a cleaning assembly for a substrate processing chamber includes a distribution ring. The distribution ring comprises a body with an inlet and an outlet. The outlet is fluidly coupled to an internal volume of the substrate processing chamber via a sidewall of the substrate processing chamber. The cleaning assembly includes a cleaning conduit configured to fluidly couple a gas manifold to the distribution ring for diverting a first portion of cleaning fluid from the gas manifold to the distribution ring.
    Type: Grant
    Filed: March 23, 2021
    Date of Patent: June 18, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Yuxing Zhang, Tuan Anh Nguyen, Amit Kumar Bansal, Nitin Pathak, Saket Rathi, Thomas Rubio, Udit S. Kotagi, Badri N. Ramamurthi, Dharma Ratnam Srichurnam
  • Patent number: 11908662
    Abstract: Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: February 20, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Xiaopu Li, Kallol Bera, Edward P. Hammond, IV, Jonghoon Baek, Amit Kumar Bansal, Jun Ma, Satoru Kobayashi
  • Patent number: 11898249
    Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
    Type: Grant
    Filed: February 13, 2023
    Date of Patent: February 13, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward W. Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian
  • Publication number: 20240044000
    Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.
    Type: Application
    Filed: October 18, 2023
    Publication date: February 8, 2024
    Inventors: Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Daemian Raj BENJAMIN RAJ, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ, Gregory Eugene CHICHKANOFF, Xinhai HAN, Masaki OGATA, Kristopher ENSLOW, Wenjiao WANG
  • Patent number: 11851759
    Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.
    Type: Grant
    Filed: December 16, 2022
    Date of Patent: December 26, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shailendra Srivastava, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Daemian Raj Benjamin Raj, Amit Kumar Bansal, Juan Carlos Rocha-Alvarez, Gregory Eugene Chichkanoff, Xinhai Han, Masaki Ogata, Kristopher Enslow, Wenjiao Wang
  • Patent number: 11827980
    Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.
    Type: Grant
    Filed: October 26, 2022
    Date of Patent: November 28, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Nitin Pathak, Amit Kumar Bansal, Tuan Anh Nguyen, Thomas Rubio, Badri N. Ramamurthi, Juan Carlos Rocha-Alvarez
  • Publication number: 20230360955
    Abstract: Embodiments described herein generally relate to process chambers with coaxial lift devices. In some embodiments, the device comprises both a bottom bowl lift and a pedestal lift. The bottom bowl lift supports a bottom bowl and is configured to move the bottom bowl into a position that reduces the process volume. The bottom bowl lift is co-axial with the pedestal lift and the bottom bowl lift and the pedestal lift are attached for vacuum operation. The pedestal lift includes multiple actuators to create a dynamic lift mechanism. Both systems complete a nested system such that the bottom bowl lift is adjustable and can close the bottom bowl creating a symmetric and small process volume. The pedestal lift can move independently to its process position and tilt in a desired direction without interference with the bottom bowl lift, increasing film uniformity on a processed substrate.
    Type: Application
    Filed: July 21, 2023
    Publication date: November 9, 2023
    Inventors: Jason M. SCHALLER, Jeffrey Charles BLAHNIK, Amit Kumar BANSAL
  • Publication number: 20230360956
    Abstract: Embodiments described herein generally relate to process chambers with coaxial lift devices. In some embodiments, the device comprises both a bottom bowl lift and a pedestal lift. The bottom bowl lift supports a bottom bowl and is configured to move the bottom bowl into a position that reduces the process volume. The bottom bowl lift is co-axial with the pedestal lift and the bottom bowl lift and the pedestal lift are attached for vacuum operation. The pedestal lift includes multiple actuators to create a dynamic lift mechanism. Both systems complete a nested system such that the bottom bowl lift is adjustable and can close the bottom bowl creating a symmetric and small process volume. The pedestal lift can move independently to its process position and tilt in a desired direction without interference with the bottom bowl lift, increasing film uniformity on a processed substrate.
    Type: Application
    Filed: July 21, 2023
    Publication date: November 9, 2023
    Inventors: Jason M. SCHALLER, Jeffrey Charles BLAHNIK, Amit Kumar BANSAL
  • Publication number: 20230289587
    Abstract: Methods and systems are presented for configuring and training a machine learning model using transfer learning techniques that can transfer knowledge among multiple domains that do not share an identical feature set. Instead of using any feature set associated with a domain, a feature arrangement that combines all of the feature sets associated with the multiple domains in a particular organization for configuring and training the machine learning model. The feature arrangement includes a domain independent section and multiple domain-specific sections corresponding to the multiple domains. The domain independent section includes common features that are common across the multiple domains. Each of the domain-specific sections includes a feature set associated with the corresponding domain. The machine learning model that is configured in this manner can be trained to learn knowledge across the multiple domains and subsequently perform tasks for the multiple domains.
    Type: Application
    Filed: March 8, 2022
    Publication date: September 14, 2023
    Inventors: Zhida Shen, Suraj Jayakumar, Amit Kumar Bansal, Chao Cheng
  • Patent number: 11742235
    Abstract: Embodiments described herein generally relate to process chambers with coaxial lift devices. In some embodiments, the device comprises both a bottom bowl lift and a pedestal lift. The bottom bowl lift supports a bottom bowl and is configured to move the bottom bowl into a position that reduces the process volume. The bottom bowl lift is co-axial with the pedestal lift and the bottom bowl lift and the pedestal lift are attached for vacuum operation. The pedestal lift includes multiple actuators to create a dynamic lift mechanism. Both systems complete a nested system such that the bottom bowl lift is adjustable and can close the bottom bowl creating a symmetric and small process volume. The pedestal lift can move independently to its process position and tilt in a desired direction without interference with the bottom bowl lift, increasing film uniformity on a processed substrate.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: August 29, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Jason M. Schaller, Jeffrey Charles Blahnik, Amit Kumar Bansal
  • Patent number: 11697877
    Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.
    Type: Grant
    Filed: December 28, 2021
    Date of Patent: July 11, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Amit Kumar Bansal, Saket Rathi, Tuan Anh Nguyen
  • Publication number: 20230193466
    Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
    Type: Application
    Filed: February 13, 2023
    Publication date: June 22, 2023
    Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Michael Wenyoung TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward W. BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN
  • Publication number: 20230128297
    Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.
    Type: Application
    Filed: December 16, 2022
    Publication date: April 27, 2023
    Inventors: Kalyanjit GHOSH, Shailendra SRIVASTAVA, Tejas ULAVI, Yusheng ZHOU, Amit Kumar BANSAL, Sanjeev BALUJA
  • Publication number: 20230123089
    Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.
    Type: Application
    Filed: December 16, 2022
    Publication date: April 20, 2023
    Inventors: Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Daemian Raj Benjamin RAJ, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ, Gregory Eugene CHICHKANOFF, Xinhai HAN, Masaki OGATA, Kristopher ENSLOW, Wenjiao WANG
  • Patent number: 11613812
    Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
    Type: Grant
    Filed: September 3, 2020
    Date of Patent: March 28, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian
  • Publication number: 20230047451
    Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.
    Type: Application
    Filed: October 26, 2022
    Publication date: February 16, 2023
    Inventors: Nitin PATHAK, Amit Kumar BANSAL, Tuan Anh NGUYEN, Thomas RUBIO, Badri N. RAMAMURTHI, Juan Carlos ROCHA-ALVAREZ