Patents by Inventor Amit Kumar BANSAL

Amit Kumar BANSAL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220403520
    Abstract: Embodiments described herein relate to ground path systems providing a shorter and symmetrical path for radio frequency (RF) energy to propagate to a ground to reduce generation of the parasitic plasma. The ground path system bifurcates the processing volume of the chamber to form an inner volume that isolates an outer volume of the processing volume.
    Type: Application
    Filed: August 22, 2022
    Publication date: December 22, 2022
    Inventors: Tuan Anh NGUYEN, Jason M. SCHALLER, Edward P. HAMMOND, IV, David BLAHNIK, Tejas ULAVI, Amit Kumar BANSAL, Sanjeev BALUJA, Jun MA, Juan Carlos ROCHA-ALVAREZ
  • Patent number: 11530482
    Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.
    Type: Grant
    Filed: June 5, 2020
    Date of Patent: December 20, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shailendra Srivastava, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Daemian Raj Benjamin Raj, Amit Kumar Bansal, Juan Carlos Rocha-Alvarez, Gregory Eugene Chichkanoff, Xinhai Han, Masaki Ogata, Kristopher Enslow, Wenjiao Wang
  • Patent number: 11532462
    Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.
    Type: Grant
    Filed: April 22, 2020
    Date of Patent: December 20, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Kalyanjit Ghosh, Shailendra Srivastava, Tejas Ulavi, Yusheng Zhou, Amit Kumar Bansal, Sanjeev Baluja
  • Patent number: 11492705
    Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: November 8, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Nitin Pathak, Amit Kumar Bansal, Tuan Anh Nguyen, Thomas Rubio, Badri N. Ramamurthi, Juan Carlos Rocha-Alvarez
  • Publication number: 20220307129
    Abstract: The present disclosure relates to a cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a cleaning assembly for a substrate processing chamber includes a distribution ring. The distribution ring comprises a body with an inlet and an outlet. The outlet is fluidly coupled to an internal volume of the substrate processing chamber via a sidewall of the substrate processing chamber. The cleaning assembly includes a cleaning conduit configured to fluidly couple a gas manifold to the distribution ring for diverting a first portion of cleaning fluid from the gas manifold to the distribution ring.
    Type: Application
    Filed: March 23, 2021
    Publication date: September 29, 2022
    Inventors: Yuxing Zhang, Tuan Anh Nguyen, Amit Kumar Bansal, Nitin Pathak, Saket Rathi, Thomas Rubio, Udit S. Kotagi, Badri N. Ramamurthi, Dharma Ratnam Srichurnam
  • Patent number: 11443921
    Abstract: The present disclosure provides an apparatus including a chamber body and a lid defining a volume therein. The apparatus includes a substrate support disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem, and a ground plate disposed between the support body and the stem. A top flange is coupled to a lower peripheral surface the ground plate and a bottom flange is coupled to a bottom of the chamber body. The bottom flange and the top flange is coupled to one another with a plurality of straps, each of the straps having a first end coupled to the bottom flange and a second end coupled to the top flange.
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: September 13, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Gaosheng Fu, Tuan Anh Nguyen, Amit Kumar Bansal
  • Patent number: 11434569
    Abstract: Embodiments described herein relate to ground path systems providing a shorter and symmetrical path for radio frequency (RF) energy to propagate to a ground to reduce generation of the parasitic plasma. The ground path system bifurcates the processing volume of the chamber to form an inner volume that isolates an outer volume of the processing volume.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: September 6, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Tuan Anh Nguyen, Jason M. Schaller, Edward P. Hammond, IV, David Blahnik, Tejas Ulavi, Amit Kumar Bansal, Sanjeev Baluja, Jun Ma, Juan Carlos Rocha
  • Publication number: 20220181120
    Abstract: In some embodiments, the semiconductor process apparatus comprises a conductive support comprising mesh, a conductive shaft comprising a conductive rod, and a plurality of connection elements. The plurality of connection elements are coupled to the mesh in parallel and are connected to the rod at a single junction. The plurality of connection elements help spread RF current, reducing localized heating in the substrate, resulting in a more uniform film deposition. Additionally, using connection elements that are merged and coupled to a single RF rod allow for the rod to be made of materials that can conduct RF current at lower temperatures.
    Type: Application
    Filed: February 22, 2022
    Publication date: June 9, 2022
    Inventors: Jun MA, Jian LI, David H. QUACH, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ
  • Publication number: 20220119950
    Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.
    Type: Application
    Filed: December 28, 2021
    Publication date: April 21, 2022
    Inventors: Amit Kumar BANSAL, Saket RATHI, Tuan Anh NGUYEN
  • Patent number: 11299805
    Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft having an outer wall. The substrate support has a heater. The heater has a body having a top surface, a side surface and a bottom surface extending from the outer wall of the shaft. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius. A sleeve circumscribing the shaft, the sleeve and the outer wall of the shaft forming a space therebetween, the space adapted to flow a purge gas therethrough in a direction toward the body.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: April 12, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Ren-Guan Duan, Amit Kumar Bansal, Jianhua Zhou, Juan Carlos Rocha-Alvarez
  • Patent number: 11293099
    Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.
    Type: Grant
    Filed: May 5, 2020
    Date of Patent: April 5, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Amit Kumar Bansal, Juan Carlos Rocha-Alvarez, Sanjeev Baluja, Sam H. Kim, Tuan Anh Nguyen
  • Publication number: 20220098729
    Abstract: The present disclosure relates to a method for cleaning one or more chamber components having contaminants. The method includes introducing a gas mixture to a remote plasma source, the gas mixture includes argon, an oxygen-containing gas and a nitrogen-containing gas. The argon to oxygen gas ratio in the gas mixture is about 0.2:1 to about 1:1 by volume. A plasma is formed from the gas mixture in the remote plasma source. The plasma includes oxygen radicals, argon radicals, and nitrogen radicals. The plasma is introduced to a process volume of the process chamber and exposes surfaces of one or more chamber components. The process volume of the process chamber has a pressure of about 10 mTorr to about 6 Torr and a temperature above 300° C.
    Type: Application
    Filed: September 28, 2020
    Publication date: March 31, 2022
    Inventors: Fei WU, Abdul Aziz KHAJA, Amit Kumar BANSAL, Tuan Anh (Mike) NGUYEN, Qian SUI
  • Patent number: 11276569
    Abstract: Embodiments described herein relate to manufacturing layer stacks of oxide/nitride (ON) layers with minimized in-plane distortion (IPD) and lithographic overlay errors. A method of forming a layer stack ON layers includes flowing a first silicon-containing gas, an oxygen-containing gas, and a first dilution gas. A RF power is symmetrically applied to form a first material layer of SiO2. A second silicon-containing gas, a nitrogen-containing gas, and a second dilution gas are flowed. A second RF power is symmetrically applied to form a second material layer of Si3N4. The flowing the first silicon-containing gas, the oxygen-containing gas, and the first dilution gas, the symmetrically applying the first RF power, the flowing the second silicon-containing gas, the nitrogen-containing gas, and the second dilution gas, and the symmetrically applying the second RF power is repeated until a desired number of first material layers and second material layers make up a layer stack.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: March 15, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Yongjing Lin, Tza-Jing Gung, Masaki Ogata, Yusheng Zhou, Xinhai Han, Deenesh Padhi, Juan Carlos Rocha, Amit Kumar Bansal, Mukund Srinivasan
  • Publication number: 20220067510
    Abstract: Methods and systems are presented for tagging an account associated with a user based on a predicted likelihood of an event associated with the user. A set of features is determined for data associated with the user. Values from the data are aggregated over time intervals for each feature to create time series data. The time series data is used as input to a neural network configured to accept input with the determined features. A predictive value indicating the likelihood of an event associated with the user is received from the neural network and used to determine whether to tag a user account. Determinations regarding the user are made based on the existence of absence of a tag on the user's account.
    Type: Application
    Filed: September 3, 2020
    Publication date: March 3, 2022
    Inventors: Suraj Jayakumar, Amit Kumar Bansal, Chao Cheng
  • Patent number: 11242600
    Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed in the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.
    Type: Grant
    Filed: June 17, 2020
    Date of Patent: February 8, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Amit Kumar Bansal, Saket Rathi, Tuan Anh Nguyen
  • Publication number: 20210395881
    Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed in the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.
    Type: Application
    Filed: June 17, 2020
    Publication date: December 23, 2021
    Inventors: Amit Kumar BANSAL, Saket RATHI, Tuan Anh NGUYEN
  • Publication number: 20210391147
    Abstract: The present disclosure provides an apparatus including a chamber body and a lid defining a volume therein. The apparatus includes a substrate support disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem, and a ground plate disposed between the support body and the stem. A top flange is coupled to a lower peripheral surface the ground plate and a bottom flange is coupled to a bottom of the chamber body. The bottom flange and the top flange is coupled to one another with a plurality of straps, each of the straps having a first end coupled to the bottom flange and a second end coupled to the top flange.
    Type: Application
    Filed: June 11, 2020
    Publication date: December 16, 2021
    Inventors: Gaosheng FU, Tuan Anh NGUYEN, Amit Kumar BANSAL
  • Patent number: 11136665
    Abstract: Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: October 5, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Dale Du Bois, Mohamad A. Ayoub, Robert Kim, Amit Kumar Bansal, Mark Fodor, Binh Nguyen, Siu F. Cheng, Hang Yu, Chiu Chan, Ganesh Balasubramanian, Deenesh Padhi, Juan Carlos Rocha
  • Patent number: 11107704
    Abstract: A substrate processing system includes a processing chamber that includes a substrate support positioned therein. The substrate processing system includes a valve system fluidly coupled to the processing chamber and configured to control flow of gas into the processing chamber. The valve system includes a primary flow line and a first gas source flow line fluidly coupled to the primary flow line through a first gas source valve. The valve system includes a second gas source flow line fluidly coupled to the primary flow line through a second gas source valve. The first gas source valve and the second gas source valve are positioned in series within the primary flow line.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: August 31, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tejas Ulavi, Thuy Britcher, Amit Kumar Bansal
  • Patent number: 11078568
    Abstract: The present disclosure relates to pumping devices, components thereof, and methods associated therewith for substrate processing chambers. In one example, a pumping ring for substrate processing chambers includes a body. The body includes an upper wall, a lower wall, an inner radial wall, and an outer radial wall. The pumping ring also includes an annulus defined by the upper wall, the lower wall, the inner radial wall, and the outer radial wall. The pumping ring also includes a first exhaust port in the body that is fluidly coupled to the annulus, and a second exhaust port in the body that is fluidly coupled to the annulus. The pumping ring also includes a first baffle disposed in the annulus adjacent to the first exhaust port, and a second baffle disposed in the annulus adjacent to the second exhaust port.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: August 3, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Kalyanjit Ghosh, David Blahnik, Amit Kumar Bansal, Tuan Anh Nguyen