Patents by Inventor Amit Kumar BANSAL
Amit Kumar BANSAL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170101712Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and a underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.Type: ApplicationFiled: December 10, 2015Publication date: April 13, 2017Inventors: Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ, Sanjeev BALUJA, Sam H. KIM, Tuan Anh NGUYEN
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Patent number: 9593419Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.Type: GrantFiled: February 26, 2015Date of Patent: March 14, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Ramprakash Sankarakrishnan, Robert Kim, Dale R. Du Bois, Kirby Hane Floyd, Amit Kumar Bansal, Tuan Anh Nguyen
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Publication number: 20170069464Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.Type: ApplicationFiled: July 19, 2016Publication date: March 9, 2017Inventors: Zheng John YE, Abdul Aziz KHAJA, Amit Kumar BANSAL, Kwangduk Douglas LEE, Xing LIN, Jianhua ZHOU, Addepalli Sai SUSMITA, Juan Carlos ROCHA-ALVAREZ
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Publication number: 20170062218Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.Type: ApplicationFiled: July 6, 2016Publication date: March 2, 2017Inventors: Ziqing DUAN, Kwangduk Douglas LEE, Abdul Aziz KHAJA, Amit Kumar BANSAL, Bok Hoen KIM, Prashant Kumar KULSHRESHTHA
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Publication number: 20170016118Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: September 28, 2016Publication date: January 19, 2017Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Michael Wenyoung TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN
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Publication number: 20160358804Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.Type: ApplicationFiled: May 27, 2016Publication date: December 8, 2016Inventors: Prashant Kumar KULSHRESHTHA, Ziqing DUAN, Abdul Aziz KHAJA, Zheng John YE, Amit Kumar BANSAL
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Publication number: 20160322200Abstract: A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.Type: ApplicationFiled: April 29, 2016Publication date: November 3, 2016Inventors: Kaushik ALAYAVALLI, Xinhai HAN, Praket P. JHA, Masaki OGATA, Zhijun JIANG, Allen KO, Ndanka O. MUKUTI, Thuy BRITCHER, Amit Kumar BANSAL, Ganesh BALASUBRAMANIAN, Juan Carlos ROCHA-ALVAREZ, Bok Hoen KIM
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Publication number: 20160315000Abstract: A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.Type: ApplicationFiled: April 5, 2016Publication date: October 27, 2016Inventors: Tuan Anh NGUYEN, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ
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Patent number: 9458537Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: September 29, 2015Date of Patent: October 4, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian
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Publication number: 20160222507Abstract: A processing chamber is described having a gas evacuation flow path from the center to the edge of the chamber. Purge gas is introduced at an opening around a support shaft that supports a heater plate. A shaft wall around the opening directs the purge gas along the support shaft to an evacuation plenum. Gas flows from the evacuation plenum through an opening in a second plate near the shaft wall and along the chamber bottom to an opening coupled to a vacuum source. Purge gas is also directed to the slit valve.Type: ApplicationFiled: February 5, 2016Publication date: August 4, 2016Inventors: Juan Carlos ROCHA-ALVAREZ, Amit Kumar BANSAL, Ganesh BALASUBRAMANIAN, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN
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Publication number: 20160145742Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.Type: ApplicationFiled: November 24, 2014Publication date: May 26, 2016Applicant: Applied Materials, Inc.Inventors: Karthik Janakiraman, Thomas NOWAK, Juan Carlos ROCHA-ALVAREZ, Mark FODOR, Dale R. DU BOIS, Amit Kumar BANSAL, Mohamad A. AYOUB, Eller Y. JUCO, Visweswaren SIVARAMAKRISHNAN, Hichem M'SAAD
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Publication number: 20160017497Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: September 29, 2015Publication date: January 21, 2016Inventors: NAGARAJAN RAJAGOPALAN, Xinhai HAN, Michael TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN
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Publication number: 20150376780Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft and a heater. The heater has a body. The body has a top surface, a side surface and a bottom surface. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius.Type: ApplicationFiled: August 20, 2014Publication date: December 31, 2015Inventors: Abdul Aziz KHAJA, Ren-Guan DUAN, Amit Kumar BANSAL, Jianhua ZHOU, Juan Carlos ROCHA-ALVAREZ
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Publication number: 20150380217Abstract: Embodiments described herein provide an apparatus for improving deposition uniformity by improving plasma profile using a tri-cut chamber liner. The apparatus also includes a lid assembly having a split process stack for reducing downtime and a bottom heater support for more efficient heating of chamber walls.Type: ApplicationFiled: March 6, 2014Publication date: December 31, 2015Inventors: Juan Carlos ROCHA-ALVAREZ, Dale R. DU BOIS, Amit Kumar BANSAL
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Publication number: 20150371881Abstract: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.Type: ApplicationFiled: February 7, 2014Publication date: December 24, 2015Inventors: Dale R. DU BOIS, Bozhi YANG, Jianhua ZHOU, Sanjeev BALUJA, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ
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Patent number: 9157730Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: October 17, 2013Date of Patent: October 13, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Ganesh Balasubramanian, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik
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Publication number: 20150262859Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.Type: ApplicationFiled: February 26, 2015Publication date: September 17, 2015Inventors: Ganesh BALASUBRAMANIAN, Juan Carlos ROCHA-ALVAREZ, Ramprakash SANKARAKRISHNAN, Robert KIM, Dale R. DU BOIS, Kirby Hane FLOYD, Amit Kumar BANSAL, Tuan Anh NGUYEN
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Publication number: 20150226540Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: October 23, 2013Publication date: August 13, 2015Applicant: Applied Materials, Inc.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Ganesh Balasubramanian, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik
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Publication number: 20140264059Abstract: Embodiments of a semiconductor processing chamber described herein include a substrate support, a source of radiant energy opposite the substrate support, a window between the source of radiant energy and the substrate support, a detector sensitive to the radiant energy positioned to detect the radiant energy transmitted by the window, and a detector sensitive to radiation emitted by the substrate positioned to detect radiation emitted by the substrate. The chamber may also include a showerhead. The substrate support may be between the detectors and the window. A second radiant energy source may be included to project energy through the window to a detector. The second radiant energy source may also be located proximate the first radiant energy source and the detectors.Type: ApplicationFiled: February 6, 2014Publication date: September 18, 2014Inventors: Sanjeev BALUJA, Tuan Anh NGUYEN, Abhijit KANGUDE, Bozhi YANG, Amit Kumar BANSAL, Inna TUREVSKY, Scott A. HENDRICKSON, Juan Carlos ROCHA- ALVAREZ, Thomas NOWAK
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Publication number: 20140263275Abstract: Embodiments of the present disclosure provide apparatus and methods for improving process uniformity. Particularly, embodiments of the present disclosure provide a rotatable temperature controlled substrate support for a semiconductor processing chamber. The rotatable temperature controlled substrate support includes one or more heating elements, one or more temperature sensors and cooling channels for circulating a cooling/heating fluid in the rotatable temperature controlled substrate support. One embodiment of the present disclosure includes a thermocouple extension assembly for extending cold junctions of the thermocouple in the substrate support away from the substrate support. The thermocouple extension assembly includes extension cords formed from materials matching with the materials of thermocouple.Type: ApplicationFiled: February 14, 2014Publication date: September 18, 2014Applicant: Applied Materials, Inc.Inventors: Tuan Anh NGUYEN, Sanjeev BALUJA, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ