Patents by Inventor Amit Rastogi
Amit Rastogi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11875980Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.Type: GrantFiled: December 31, 2020Date of Patent: January 16, 2024Inventors: Stephen R Burgess, Rhonda Hyndman, Amit Rastogi, Eduardo Paulo Lima, Clive L Widdicks, Paul Rich, Scott Haymore, Daniel Cook
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Patent number: 11718908Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.Type: GrantFiled: April 27, 2021Date of Patent: August 8, 2023Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Scott Haymore, Amit Rastogi, Rhonda Hyndman, Steve Burgess, Ian Moncrieff
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Publication number: 20210246545Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.Type: ApplicationFiled: April 27, 2021Publication date: August 12, 2021Inventors: SCOTT HAYMORE, AMIT RASTOGI, RHONDA HYNDMAN, STEVE BURGESS, IAN MONCRIEFF
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Patent number: 11008651Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.Type: GrantFiled: April 4, 2017Date of Patent: May 18, 2021Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Scott Haymore, Amit Rastogi, Rhonda Hyndman, Steve Burgess, Ian Moncrieff, Chris Kendal
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Publication number: 20210123130Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.Type: ApplicationFiled: December 31, 2020Publication date: April 29, 2021Inventors: Stephen R Burgess, Rhonda Hyndman, Amit Rastogi, Eduardo Paulo Lima, Clive L Widdicks, Paul Rich, Scott Haymore, Daniel Cook
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Patent number: 10900114Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.Type: GrantFiled: March 30, 2016Date of Patent: January 26, 2021Inventors: Stephen R Burgess, Rhonda Hyndman, Amit Rastogi, Eduardo Paulo Lima, Clive L Widdicks, Paul Rich, Scott Haymore, Daniel Cook
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Publication number: 20200365794Abstract: In a method for sputter depositing an additive-containing aluminium nitride film containing an additive element like Sc or Y, a first layer of the additive-containing aluminium nitride film is deposited onto a substrate disposed within a chamber by pulsed DC reactive sputtering. A second layer of the additive-containing aluminium nitride film is deposited onto the first layer by pulsed DC reactive sputtering. The second layer has the same composition as the first layer. A gas or gaseous mixture is introduced into the chamber when depositing the first layer. A gaseous mixture comprising nitrogen gas and an inert gas is introduced into the chamber when depositing the second layer. The percentage of nitrogen gas in the flow rate (in sccm) when depositing the first layer is greater than that when depositing the second layer.Type: ApplicationFiled: May 1, 2020Publication date: November 19, 2020Inventors: Adrian Thomas, Steve Burgess, Amit Rastogi, Tony Wilby, Scott Haymore
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Patent number: 10601388Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.Type: GrantFiled: October 5, 2016Date of Patent: March 24, 2020Inventors: Stephen R Burgess, Rhonda Hyndman, Amit Rastogi, Scott Haymore, Constanine Fragos
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Publication number: 20170294294Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.Type: ApplicationFiled: April 4, 2017Publication date: October 12, 2017Inventors: SCOTT HAYMORE, AMIT RASTOGI, RHONDA HYNDMAN, STEVE BURGESS, IAN MONCRIEFF, CHRIS KENDAL
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Publication number: 20170104465Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.Type: ApplicationFiled: October 5, 2016Publication date: April 13, 2017Inventors: STEPHEN R. BURGESS, RHONDA HYNDMAN, AMIT RASTOGI, SCOTT HAYMORE, CONSTANINE FRAGOS
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Publication number: 20160289815Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.Type: ApplicationFiled: March 30, 2016Publication date: October 6, 2016Inventors: STEPHEN R. BURGESS, RHONDA HYNDMAN, AMIT RASTOGI, EDUARDO PAULO LIMA, CLIVE L. WIDDICKS, PAUL RICH, SCOTT HAYMORE, DANIEL COOK
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Patent number: 8337675Abstract: A method induces plasma vapor deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilizing a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.Type: GrantFiled: January 26, 2010Date of Patent: December 25, 2012Assignee: SPTS Technologies LimitedInventors: Mark Ian Carruthers, Stephen Burgess, Anthony Wilby, Amit Rastogi, Paul Rich, Nicholas Rimmer
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Publication number: 20100187097Abstract: A method induces plasma vapour deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilising a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.Type: ApplicationFiled: January 26, 2010Publication date: July 29, 2010Applicant: SPP PROCESS TECHNOLOGY SYSTEMS UK LIMITEDInventors: Mark Ian Carruthers, Stephen Burgess, Anthony Wilby, Amit Rastogi, Paul Rich, Nicholas Rimmer
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Patent number: 5658526Abstract: A method is provided to produce a blown film of a vinyl aromatic/conjugated block copolymer, the method including the steps of:providing an elastomeric composition, the composition comprising a block copolymer of vinyl aromatic and a conjugated block copolymer;melting the composition in an extruder;passing the melted composition from the extruder through a die, the die being a circular die comprising a circular outlet and a tapered channel leading to the circular outlet, the circular outlet having an opening width of about 10.sup.-2 inches, the taper being a linear taper of at least a one inch length, the center of the linear taper being angled away from the center of the circular outlet at an angle of at least 10.degree. from a line normal to the circular outlet, and the die having a source of gas pressure inside of the circular outlet; andcooling the extruded composition that has been passed through the die with a cooling gas stream.Type: GrantFiled: November 1, 1995Date of Patent: August 19, 1997Assignee: Shell Oil CompanyInventors: Amit Rastogi, Bing Yang