Abstract: Provided is an actuator simultaneously having better deformation response characteristics and larger generative force. The actuator includes a pair of opposing electrodes and an intermediate layer disposed therebetween. The intermediate layer contains at least an electrolyte and includes at least a polymer fiber layer. The polymer fiber layer includes a plurality of polymer fibers crossing each other and intertwined three-dimensionally. The polymer fiber layer has fused portions at intersections of the polymer fibers.

Abstract: The present invention relates to an actuator including a supporting portion including a first electrode, a second electrode disposed opposite the first electrode, and a part of a planar electrolyte member disposed therebetween, and having terminals configured to apply a voltage between the first and second electrodes; a displacement portion; and an intermediate portion disposed between the supporting portion and the displacement portion and including a third electrode on the electrolyte member and a conductive connecting member. The third electrode includes linear members and a conductive material. The linear members have major axes thereof extending in a direction crossing a direction from the supporting portion toward the displacement portion. The third electrode has conduction paths through which a current flows in the crossing direction. The conductive connecting member is electrically connected to one of the first and second electrodes and electrically connects the conduction paths together.

Abstract: A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.

Abstract: Provided is an actuator simultaneously having better deformation response characteristics and larger generative force. The actuator includes a pair of opposing electrodes and an intermediate layer disposed therebetween. The intermediate layer contains at least an electrolyte and includes at least a polymer fiber layer. The polymer fiber layer includes a plurality of polymer fibers crossing each other and intertwined three-dimensionally. The polymer fiber layer has fused portions at intersections of the polymer fibers.

Abstract: An expansion and contraction actuator has a first long actuator portion and a second long actuator portion that face each other and connection members that connect the long sides of each of the first long actuator portion and the second long actuator portion to each other, in which a part of the first long actuator portion and a part of the second long actuator portion are apart from each other to thereby form a hollow structure, the first long actuator portion and the second long actuator portion each have a pair of long electrodes and a long electrolyte layer having an electrolyte, long internal electrodes thereof are the same cathode or anode electrodes, long external electrodes thereof are counter electrodes thereto, and the actuator expands and contracts in the direction of the screw axis by voltage application.

Abstract: The present invention relates to an actuator including a supporting portion including a first electrode, a second electrode disposed opposite the first electrode, and a part of a planar electrolyte member disposed therebetween, and having terminals configured to apply a voltage between the first and second electrodes; a displacement portion; and an intermediate portion disposed between the supporting portion and the displacement portion and including a third electrode on the electrolyte member and a conductive connecting member. The third electrode includes linear members and a conductive material. The linear members have major axes thereof extending in a direction crossing a direction from the supporting portion toward the displacement portion. The third electrode has conduction paths through which a current flows in the crossing direction. The conductive connecting member is electrically connected to one of the first and second electrodes and electrically connects the conduction paths together.

Abstract: A field-effect transistor includes at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate. The channel layer is made of an amorphous oxide material that contains at least In and B, and the amorphous oxide material has an element ratio B/(In+B) of 0.05 or higher and 0.29 or lower.

Abstract: An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.

Abstract: An expansion and contraction actuator has a first long actuator portion and a second long actuator portion that face each other and connection members that connect the long sides of each of the first long actuator portion and the second long actuator portion to each other, in which a part of the first long actuator portion and a part of the second long actuator portion are apart from each other to thereby form a hollow structure, the first long actuator portion and the second long actuator portion each have a pair of long electrodes and a long electrolyte layer having an electrolyte, long internal electrodes thereof are the same cathode or anode electrodes, long external electrodes thereof are counter electrodes thereto, and the actuator expands and contracts in the direction of the screw axis by voltage application.

Abstract: A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.

Abstract: An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.

Abstract: A field-effect transistor includes at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate. The channel layer is made of an amorphous oxide material that contains at least In and B, and the amorphous oxide material has an element ratio B/(In+B) of 0.05 or higher and 0.29 or lower.

Abstract: A field-effect transistor provided with at least a semiconductor layer and a gate electrode disposed over the above-described semiconductor layer with a gate insulating film therebetween, wherein the above-described semiconductor layer includes a first amorphous oxide semiconductor layer having at least one element selected from the group of Zn and In, and a second amorphous oxide semiconductor layer having at least one element selected from the group of Ge and Si and at least one element selected from the group of Zn and In. The composition of the above-described first amorphous oxide semiconductor layer is different from the composition of the above-described second amorphous oxide semiconductor layer.