Patents by Inventor Amitesh Srivastava

Amitesh Srivastava has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
    Patent number: 9842898
    Abstract: A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 ?s and about 9.9 ?s.
    Type: Grant
    Filed: October 3, 2013
    Date of Patent: December 12, 2017
    Assignee: University of South Carolina
    Inventors: Tangali S. Sudarshan, Amitesh Srivastava
  • Methods of Growing a Silicon Carbide Epitaxial Layer on a Substrate to Increase and Control Carrier Lifetime
    Publication number: 20140231826
    Abstract: A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 ?s and about 9.9 ?s.
    Type: Application
    Filed: October 3, 2013
    Publication date: August 21, 2014
    Inventors: Tangali S. Sudarshan, Amitesh Srivastava
  • Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
    Patent number: 8574528
    Abstract: A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 ?s and about 9.9 ?s.
    Type: Grant
    Filed: September 7, 2010
    Date of Patent: November 5, 2013
    Assignee: University of South Carolina
    Inventors: Tangali S. Sudarshan, Amitesh Srivastava
  • METHODS OF GROWING A SILICON CARBIDE EPITAXIAL LAYER ON A SUBSTRATE TO INCREASE AND CONTROL CARRIER LIFETIME
    Publication number: 20110059003
    Abstract: A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 ?s and about 9.9 ?s.
    Type: Application
    Filed: September 7, 2010
    Publication date: March 10, 2011
    Applicant: UNIVERSITY OF SOUTH CAROLINA
    Inventors: Tangali S. Sudarshan, Amitesh Srivastava