Patents by Inventor Amith Kumar Murali

Amith Kumar Murali has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Closed-space annealing process for production of CIGS thin-films
    Patent number: 9238861
    Abstract: In one embodiment, a method includes depositing a CIGS precursor layer onto a substrate, introducing a source-material layer into proximity with the precursor layer, where the source-material layer includes one or more of Cu, In, or Ga, and one or more of S or Se, and annealing the precursor layer in proximity with of the source-material layer, where the annealing is performed in a constrained volume, and where the presence of the source-material layer reduces decomposition of volatile species from the precursor layer during annealing.
    Type: Grant
    Filed: May 9, 2012
    Date of Patent: January 19, 2016
    Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIES
    Inventors: Mariana Rodica Munteanu, Amith Kumar Murali, Brian Josef Bartholomeusz, Vardaan Chawla
  • REVERSE STACK STRUCTURES FOR THIN-FILM PHOTOVOLTAIC CELLS
    Publication number: 20150340515
    Abstract: In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.
    Type: Application
    Filed: March 30, 2015
    Publication date: November 26, 2015
    Inventors: Mariana Rodica MUNTEANU, Amith Kumar MURALI, Kirk HAYES, Brian Josef BARTHOLOMEUSZ
  • Closed-space annealing of chalcogenide thin-films with volatile species
    Patent number: 9157153
    Abstract: In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.
    Type: Grant
    Filed: May 9, 2012
    Date of Patent: October 13, 2015
    Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIES
    Inventors: Mariana Rodica Munteanu, Amith Kumar Murali, Brian Josef Bartholomeusz, Vardaan Chawla
  • Reverse stack structures for thin-film photovoltaic cells
    Patent number: 8993370
    Abstract: In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: March 31, 2015
    Assignee: Zetta Research and Development LLC—AQT Series
    Inventors: Mariana Rodica Munteanu, Amith Kumar Murali, Kirk Hayes, Brian Josef Bartholomeusz
  • Reverse Stack Structures for Thin-Film Photovoltaic Cells
    Publication number: 20130276888
    Abstract: In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.
    Type: Application
    Filed: April 20, 2012
    Publication date: October 24, 2013
    Applicant: AQT SOLAR, INC.
    Inventors: Mariana Rodica Munteanu, Amith Kumar Murali, Kirk Hayes, Brian Josef Bartholomeusz
  • Closed-Space Annealing Process for Production of CIGS Thin-Films
    Publication number: 20130217214
    Abstract: In one embodiment, a method includes depositing a CIGS precursor layer onto a substrate, introducing a source-material layer into proximity with the precursor layer, where the source-material layer includes one or more of Cu, In, or Ga, and one or more of S or Se, and annealing the precursor layer in proximity with of the source-material layer, where the annealing is performed in a constrained volume, and where the presence of the source-material layer reduces decomposition of volatile species from the precursor layer during annealing.
    Type: Application
    Filed: May 9, 2012
    Publication date: August 22, 2013
    Applicant: AQT SOLAR, INC.
    Inventors: Mariana Rodica Munteanu, Amith Kumar Murali, Brian Josef Bartholomeusz, Vardaan Chawla
  • Closed-Space Annealing of Chalcogenide Thin-Films with Volatile Species
    Publication number: 20130217176
    Abstract: In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.
    Type: Application
    Filed: May 9, 2012
    Publication date: August 22, 2013
    Applicant: AQT SOLAR, INC.
    Inventors: Mariana Rodica Munteanu, Amith Kumar Murali, Brian Josef Bartholomeusz, Vardaan Chawla