Patents by Inventor Amjad Obeidat

Amjad Obeidat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230334929
    Abstract: Systems and methods are provided to generate an access code specific to a user of an online marketplace to use to enter a first accommodation during a first reservation time frame and a second accommodation during a second reservation time frame and to send the access code specific to the user to a computing device at the first accommodation and a computing device at the second accommodation to use to enter the first accommodation during the first reservation time period and the second accommodation during the second reservation time period. The access code is automatically removed from the computing device at the first accommodation and the computing device at the second accommodation at the end of the first reservation time period and at the end of the second reservation time period, respectively.
    Type: Application
    Filed: April 14, 2023
    Publication date: October 19, 2023
    Inventors: James Nicholas Pazzi, David Harry Garcia, Kyle Wulff, Jason F. Harrison, Amjad Obeidat, Andrey Yazev, William Anthony Burrus, Yat Choi, Guilherme Moreira Talarico, Taha Kowsari, Yipeng Cao, Matt Lee, Tyler Sax, Fuxin Yu, Roshan Umesh Goli, Xi Yang, Matthew Siyu Mang, Karina Sirqueira Silva
  • Patent number: 6242348
    Abstract: Process for forming a boron-doped silicon gate layer underlying a cobalt silicide layer that reduces the risk of grooving and agglomeration of cobalt silicide layer, as well as boron penetration into a gate oxide layer. The process includes providing a PMOS transistor structure that includes an N-well on a P-type silicon substrate, a gate oxide layer and a silicon gate layer. Next, a cobalt layer is deposited on the PMOS transistor structure, which is then subjected to a first thermal treatment to form a bilayer CoSi/silicon stack structure. After removing unreacted cobalt, boron dopant (BF2+ or B+) and nitrogen ions (N2+) are implanted into the bilayer CoSi/silicon stack structure. The bilayer CoSi/silicon stack structure, implanted boron and implanted nitrogen are then subjected to second thermal treatment to form a CoSi2 layer on the silicon gate layer and to thermally activate the implanted boron.
    Type: Grant
    Filed: October 4, 1999
    Date of Patent: June 5, 2001
    Assignee: National Semiconductor Corp.
    Inventors: Abu-Hena Mostafa Kamal, Amjad Obeidat