Abstract: A memory device includes at least one bitcell coupled to a local bitline. The at least one bitcell includes first, second, and third sets of a plurality of transistor devices. The first set is configured to form at least one write port. The at least one write port receives digital data. The second set of the plurality of transistor devices is configured as an inverter pair that stores the digital data. The third set of the plurality of transistor devices is configured to form at least one read port. The at least one read port is used to access the digital data from the inverter pair and output the digital data on the local bitline. The plurality of transistor devices consists of an equal number of P-channel transistor devices and N-channel transistor devices.

Abstract: Embodiments herein relate to Static Random-Access Memory (SRAM) where a write assist technique is facilitated using power supply lines (Vcc) which extend in a word line direction. The SRAM can be implemented using complementary field-effect transistor (CFET) technology, where n-type and p-type transistors are arranged in a stacked configuration on top and bottom levels, respectively of a stack. In one aspect, a power supply line is shared by a row of adjacent memory cells. In another aspect, a power supply line is shared by a row of memory cells in alternate columns. The configurations avoid disturb of unselected cells due to a Vcc collapse during writing. In another aspect, an eight-transistor SRAM memory cell includes transistor gates to reduce Vmin, the minimum supply voltage at which a memory array can operate without failure.

Abstract: Embodiments herein relate to a Static Random-Access Memory (SRAM) cell having a four-level complementary-field effect transistor (CFET) structure. In an example implementation, a first, bottom level includes one or more n-channel metal-oxide-semiconductor field-effect transistors (nMOSs), a second level includes one or more pMOS transistors, a third level includes one or more pMOS transistors and a fourth, top level includes one or more nMOS transistors. The transistors can be connected using conductive paths which extend in bottom metal layers, top metal layers and intermediate metal layers between the two pMOS levels. In an example implementation, a six-transistor memory cell is provided.

Abstract: Embodiments herein relate to Static Random-Access Memory (SRAM) where a column of cells includes first and second sets of bit lines. First and second pre-charge circuits are also provided to allow independent pre-charging of the sets of bit lines such as for write or read operations. For a read operation, a sense circuit for the column is coupled to one of the sets of bit lines by a multiplexer. The SRAM can be implemented using complementary field-effect transistor (CFET) technology, where n-type and p-type transistors are arranged in a stacked configuration on top and bottom levels, respectively of a stack. Additionally, the first and second sets of bit lines can be provided in top and bottom metal layers, respectively, of the stack. In another option, a third set of bit lines is provided using an intermediate metal layer.

Abstract: Embodiments herein relate to a balanced eight-transistor (8T) static random-access memory (SRAM) cell having four n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) and four p-type MOSFETS. An nMOS write port and two pMOS read ports are optimized with a complementary field-effect transistor (CFET) process to achieve a high density. The cell is reconfigurable for various port configurations including 1R1W (1-read 1-write), 2R1W (2-read 1-write), 3R1W (3-read 1-write), 4R1W (4-read 1-write) and single/dual-ported SRAM with appropriate Vt (voltage threshold) targeting.

Abstract: Embodiments herein relate to a memory cell having n-type metal-oxide-semiconductor field-effect transistor (nMOSFETs) in one layer in the cell and pMOSFET transistors in another, lower layer of the cell, and one or more intermediate metal (IM) layers between the nMOS and pMOS transistors. The IM layers can provide routing between the nMOS and pMOS transistors, to one or more top metal layers, above the nMOS transistors, and to one or more bottom metal layers, below the pMOS transistors. An example six-transistor cell can include four nMOS transistors and two pMOS transistors, and an example eight-transistor cell can include four nMOS transistors and four pMOS transistors.

Abstract: Various embodiments provide apparatuses, systems, and methods for a memory bitcells with a balanced distribution of (e.g., equal numbers of) p-type transistors (e.g., p-type metal-oxide-semiconductor (PMOS)) and n-type transistors (e.g., n-type metal-oxide-semiconductor (NMOS)). For example, the memory bitcell may include an NMOS passgate transistor and a PMOS passgate transistor coupled to the bit node. The memory bitcell may further include another NMOS passgate transistor and another PMOS passgate transistor coupled to the bit bar node. Other embodiments may be described and claimed.

Abstract: Some embodiments relate generally to memory arrays having complementary bitlines. With some implementations, charge sharing to facilitate midrail read operations may be incorporated therein.

Abstract: An apparatus includes a first write bit line (WBL), a first P-channel metal oxide semiconductor (PMOS) transistor including a source coupled to the WBL, a first inverter including an input coupled to a drain of the first PMOS transistor, and a second PMOS transistor including a source coupled to an output of the first inverter. The first PMOS transistor and the second PMOS transistor are disposed in at least one PMOS layer configured between a first metal layer and a second metal layer. The register file circuit further includes a first via connecting a gate of the first PMOS transistor and a gate of the second PMOS transistor in the at least one PMOS layer to the first metal layer.

Abstract: Various embodiments provide apparatuses, systems, and methods for a register file array with a plurality of sets of memory cells, wherein individual sets of memory cells of the plurality of sets of memory cells are coupled to a respective local bit line (LBL). A merge circuitry may include a multiplexer with inputs coupled to the respective LBLs, wherein the multiplexer is to couple a selected one of the LBLs to a LBL merge node. Read circuitry may be coupled to the LBL merge node to read data from a first memory cell via the selected LBL. In some embodiments, the LBL may be precharged to a supply voltage (e.g., Vcc) minus a threshold voltage, Vt, of the multiplexer transistor, as opposed to being precharged to Vcc as in prior techniques. Other embodiments may be described and claimed.

Abstract: A memory device includes at least one bitcell coupled to a local bitline. The at least one bitcell includes multiple sets of a plurality of transistor devices. The first set of the plurality of transistor devices is configured to form a single write (1W) port for receiving digital data. The second set of the plurality of transistor devices is configured as an inverter pair. The inverter pair stores the digital data. The third set of the plurality of transistor devices is configured to form a single read (1R) port. The 1R port can be used to access the digital data stored at the inverter pair and output the digital data on the local bitline. The plurality of transistor devices includes an equal number of P-channel transistor devices and N-channel transistor devices.

Abstract: A memory device includes at least one bitcell coupled to a local bitline. The at least one bitcell includes first, second, and third sets of a plurality of transistor devices. The first set is configured to form at least one write port. The at least one write port receives digital data. The second set of the plurality of transistor devices is configured as an inverter pair that stores the digital data. The third set of the plurality of transistor devices is configured to form at least one read port. The at least one read port is used to access the digital data from the inverter pair and output the digital data on the local bitline. The plurality of transistor devices consists of an equal number of P-channel transistor devices and N-channel transistor devices.

Abstract: A memory system includes a column circuit to generate a logic state of data stored in one of the memory bit cell circuits in a column in a read operation. The column circuit includes a read control circuit to cause a float control circuit to couple a read bit line to a charged evaluation output line in a read operation and cause the float control circuit to decouple the read bit line from the evaluation output line in an idle stage. Decoupling the read bit line from the charged evaluation output line reduces power lost between read operations by current leaking through read port circuits in the memory bit cell circuits to which the read bit line is coupled. The memory system may include at least one read bit line, each coupled to a respective float control circuit and a respective plurality of memory bit cell circuits in a column.

Abstract: A memory system includes a column circuit to generate a logic state of data stored in one of the memory bit cell circuits in a column in a read operation. The column circuit includes a read control circuit to cause a float control circuit to couple a read bit line to a charged evaluation output line in a read operation and cause the float control circuit to decouple the read bit line from the evaluation output line in an idle stage. Decoupling the read bit line from the charged evaluation output line reduces power lost between read operations by current leaking through read port circuits in the memory bit cell circuits to which the read bit line is coupled. The memory system may include at least one read bit line, each coupled to a respective float control circuit and a respective plurality of memory bit cell circuits in a column.

Abstract: Memory bit cells including write control circuits for coupling control of voltage sources to avoid or reduce write contention. The memory bit cells may be static random-access memory (SRAM) bit cells that include a true storage circuit and a complement storage circuit cross-coupled to generate complementary logical data states. Writing data into a memory bit cell circuit includes pulling up one of the true and complement storage circuits based on a pull-up voltage on a pull-up voltage rail while pulling down the opposite true or complementary output node based on a pull-down voltage on a pull-down voltage rail (i.e., to a logic ‘0’). The write control circuit can be controlled to decouple one of the true or complement storage circuits from a pull-up voltage rail or a pull-down voltage rail in response to a write operation to reduce or avoid a write contention.

Abstract: A stress-based aging monitor circuit includes a reference ring oscillator circuit and a stressed ring oscillator circuit that each include transistors like the transistors in a circuit to be monitored. Transistors in the stressed ring oscillator circuit receive a negative gate to source voltage bias while the reference ring oscillator is protected from stress. To measure performance degradation due to stress-based aging, the switching frequencies of the reference ring oscillator circuit and the stressed ring oscillator circuit are compared. The reference ring oscillator and the stressed ring oscillator include stress-enhanced inverter circuits configured to amplify stress-based aging effects to increase sensitivity to the performance degradation caused by stress-based aging. Increased sensitivity increases the precision (e.g.

Abstract: Write assist circuitry facilitates increased voltage applied to a memory device such as a memory cell or bitcell in changing a logical state of the memory device during a write operation. The write assist circuitry includes a second capacitive line or “metal cap” in addition to a first capacitive line coupled to one of a pair of bitlines to which voltage may be selectively applied. The capacitive lines provide increased write assistance to the memory device. The second capacitive line structurally lies in a second orientation and is formed in an integrated circuit second metal layer relative to the first capacitive line in some embodiments. The additional capacitive line provides negative bitline assistance by selectively driving its corresponding bitlines to be negative during a write operation.

Abstract: Write assist circuitry facilitates increased voltage applied to a memory device such as a memory cell or bitcell in changing a logical state of the memory device during a write operation. The write assist circuitry includes a second capacitive line or “metal cap” in addition to a first capacitive line coupled to one of a pair of bitlines to which voltage may be selectively applied. The capacitive lines provide increased write assistance to the memory device. The second capacitive line structurally lies in a second orientation and is formed in an integrated circuit second metal layer relative to the first capacitive line in some embodiments. The additional capacitive line provides negative bitline assistance by selectively driving its corresponding bitlines to be negative during a write operation.

Abstract: A circuit with headroom monitoring includes a memory array having memory cells, a replica array, and a built-in self test circuit. The replica array has a plurality of word lines, a plurality of bit line pairs, and memory cells located at intersections of the plurality of word lines and the plurality of bit line pairs. The memory cells are of a same type as memory cells in the memory array. The built-in self test circuit is coupled to the replica array for adding a capacitance to at least one bit line of the plurality of bit line pairs, for sensing a read time of memory cells of the replica array with the capacitance so added, and for providing a headroom signal in response to the read time.

Abstract: A test circuit for a static random access memory (SRAM) array includes a plurality of stages coupled in a ring. Each stage includes a plurality of bit cells to store information, a bit line and a complementary bit line coupled to the plurality of bit cells, and a plurality of word lines coupled to the plurality of bit cells. Subsets of the plurality of word lines of each of the plurality of stages are selectively enabled based on signals asserted on the complementary bit line of another one of the plurality of stages. The test circuit also includes inversion logic deployed between two of the plurality of stages.