Patents by Inventor Amlan Majumdat

Amlan Majumdat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure including gate electrode having laterally variable work function
    Patent number: 7989900
    Abstract: A semiconductor structure, such as a CMOS structure, includes a gate electrode that has a laterally variable work function. The gate electrode that has the laterally variable work function may be formed using an angled ion implantation method or a sequential layering method. The gate electrode that has the laterally variable work function provides enhanced electrical performance within an undoped channel field effect transistor device.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: August 2, 2011
    Assignee: International Business Machines Corporation
    Inventors: Wilfried Haensch, Steven Koester, Amlan Majumdat