Patents by Inventor Amol R. Joshi

Amol R. Joshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD AND APPARATUS TO MITIGATE HOT ELECTRON READ DISTURBS IN 3D NAND DEVICES
    Publication number: 20220284968
    Abstract: An apparatus, a method, and a system. The method includes implementing an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck; applying a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock; and implementing, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.
    Type: Application
    Filed: May 26, 2022
    Publication date: September 8, 2022
    Applicant: Intel Corporation
    Inventors: Wei Cao, Richard M. Fastow, Xuehong Yu, Xin Sun, Hyungseok Kim, Narayanan Ramanan, Amol R. Joshi, Krishna Parat
  • Method and apparatus to mitigate hot electron read disturbs in 3D NAND devices
    Patent number: 11355199
    Abstract: An apparatus, a method, and a system. The method includes implementing an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck; applying a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock; and implementing, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: June 7, 2022
    Assignee: Intel Corporation
    Inventors: Wei Cao, Richard M. Fastow, Xuehong Yu, Xin Sun, Hyungseok Kim, Narayanan Ramanan, Amol R. Joshi, Krishna Parat
  • METHOD AND APPARATUS TO MITIGATE HOT ELECTRON READ DISTURBS IN 3D NAND DEVICES
    Publication number: 20220028459
    Abstract: An apparatus, a method, and a system. The method includes implementing an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck; applying a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock; and implementing, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.
    Type: Application
    Filed: July 23, 2020
    Publication date: January 27, 2022
    Inventors: Wei Cao, Richard M. Fastow, Xuehong Yu, Xin Sun, Hyungseok Kim, Narayanan Ramanan, Amol R. Joshi, Krishna Parat