Patents by Inventor Amr Mohamed Mohsen

Amr Mohamed Mohsen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Charge injection input network for semiconductor charge transfer device
    Patent number: 4010484
    Abstract: A semiconductor charge transfer device (CTD) has an input network which includes an added gate region held at constant voltage, the added gate region being located between an input semiconductor charge injection region (input diode) and a signal gate region. In this way the amount of signal charge transferred into the CTD is less sensitive to unavoidable noise in the clock voltages which are applied to electrodes associated with the bulk of the CTD for the purpose of shifting the signal charge therethrough; and the linearity of the ratio of injected charge to signal voltage is also improved.
    Type: Grant
    Filed: August 16, 1974
    Date of Patent: March 1, 1977
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Amr Mohamed Mohsen
  • Balanced regenerative charge detection circuit for semiconductor charge transfer devices
    Patent number: 4007381
    Abstract: In order to use a flip-flop amplifier for regenerative sensing of the binary output stream of a many-stage main semiconductor charge transfer device section, an auxiliary semiconductor charge transfer device section of but a few or a single transfer stage is fabricated in close proximity of the output diode of the main semiconductor charge transfer device section. This auxiliary charge transfer device section is arranged to provide an output stream of unilevel charge packets which are midway between the binary charge levels of the output stream in the main semiconductor charge transfer device section.
    Type: Grant
    Filed: April 18, 1975
    Date of Patent: February 8, 1977
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Amr Mohamed Mohsen
  • Electrically pulsed charge regenerator for semiconductor charge coupled devices
    Patent number: 3986059
    Abstract: A charge regenerator for a semiconductor charge transfer device is disclosed in which the regenerator contains an input diode which is subjected to a pulsed voltage. The signal to be regenerated is applied to a control gate electrode which controls the surface potential of the underlying semiconductor surface region located between the input diode and an auxiliary transfer cell feeding an array of output charge transfer cells. After termination of the diode pulse, charges flow back from the auxiliary transfer cell to the input diode through the control gate region such that the charge remaining in the auxiliary transfer cell is independent of the signal level on the control gate so long as this signal level is above a threshold for the injection of charges from the input diode to the auxiliary transfer cell and is zero otherwise.
    Type: Grant
    Filed: April 18, 1975
    Date of Patent: October 12, 1976
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Amr Mohamed Mohsen