Abstract: A method of forming a semiconductor memory device includes simultaneously filling a top portion of a first high aspect ratio (HAR) structure and a top portion a second HAR structure with a silicon-containing sacrificial layer by a cycle of a deposition process and an etch process, wherein the first HAR structure has a critical dimension (CD) of between 150 nm and 250 nm, and the second HAR structure has a CD of between 250 nm and 400 nm.

Abstract: Device structures for a FinFET and fabrication methods for making a device structure for a FinFET. A first layer containing a first dopant is formed on a first region of a substrate. A second layer containing a second dopant is formed on a second region of the substrate. A first plurality of fins are formed and are each located in a respective trench extending from the substrate through the first layer. A second plurality of fins are formed and are each located in a respective trench extending from the substrate through the second layer. The first dopant is transferred from the first layer to a first section in each of the first plurality of fins and the second dopant is transferred from the second layer to a first section in each of the second plurality of fins.

Abstract: Device structures for a FinFET and fabrication methods for making a device structure for a FinFET. A first layer containing a first dopant is formed on a first region of a substrate. A second layer containing a second dopant is formed on a second region of the substrate. A first plurality of fins are formed and are each located in a respective trench extending from the substrate through the first layer. A second plurality of fins are formed and are each located in a respective trench extending from the substrate through the second layer. The first dopant is transferred from the first layer to a first section in each of the first plurality of fins and the second dopant is transferred from the second layer to a first section in each of the second plurality of fins.