Abstract: A semiconductor structure with a backside protective layer and backside probes and a method for constructing the structure. Consistent with one embodiment of the invention, the semiconductor structure comprises a substrate having a first surface, on which a circuit interconnect layer is formed, and a second surface. A protective layer is formed on the second surface of the substrate, wherein the protective layer is non-reactive with gas used to etch the substrate. An electrically conductive probe extends from the protective layer through the substrate to an active region which is disposed in the substrate.