Abstract: The present disclosure relates to variant lipolytic enzymes, more particularly variant lipolytic enzymes that have improved stability and/or improved hydrolytic activity on a polyester. Such variant lipolytic enzymes find use in the degradation of polyesters, such as polyethylene terephthalate. Also provided are compositions and methods related to such variant lipolytic enzymes.

Abstract: An absorbent article is described that includes leg elastics that form the outermost edges of the product. The leg elastics can include an increased number of elastomeric strands and can extend outboard of the chassis. In this manner, the leg elastics can form a proper seal with the legs of the wearer without interference and can be visually inspected by a caregiver. Placing the leg elastics outboard of the chassis also provides for an efficient manner of producing the garment by attaching multiple elastic components to the garment along a vertical bonding seam.

Abstract: Semiconductor devices having a buried layer and methods for forming the same are disclosed. In an exemplary method, a hard mask layer can be provided on a semiconductor substrate. The hard mask layer can have a plurality of through-openings. A plurality of deep trenches can be formed in the semiconductor substrate using the hard mask layer as a mask. A bottom of each of the plurality of deep trenches in the semiconductor substrate can be doped to form a plurality of heavily-doped regions. One or more of the plurality of heavily-doped regions can be connected to form the buried layer in the semiconductor substrate. There is thus no need to use an epitaxial process to form active regions. In addition, lateral isolation structures can be simultaneously formed in the semiconductor substrate.

Abstract: Semiconductor devices having a buried layer and methods for forming the same are disclosed. In an exemplary method, a hard mask layer can be provided on a semiconductor substrate. The hard mask layer can have a plurality of through-openings. A plurality of deep trenches can be formed in the semiconductor substrate using the hard mask layer as a mask. A bottom of each of the plurality of deep trenches in the semiconductor substrate can be doped to form a plurality of heavily-doped regions. One or more of the plurality of heavily-doped regions can be connected to form the buried layer in the semiconductor substrate. There is thus no need to use an epitaxial process to form active regions. In addition, lateral isolation structures can be simultaneously formed in the semiconductor substrate.