Abstract: New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

Abstract: A photoresist composition, including a polymer having a C6-30 hydroxyaromatic group, a solvent, and a sulfonium salt having Formula (I): wherein, in Formula (I), R, R1 to R8, X, n, and Rf are the same as described in the specification.

Abstract: New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a polymer comprising a surface attachment group for forming a bond with a surface of the patterned feature and a solvent, and wherein the pattern treatment composition is free of crosslinkers; (c) removing residual pattern treatment composition from the substrate with a first rinse agent, leaving a coating of the polymer over and bonded to the surface of the patterned feature; and (d) rinsing the polymer-coated patterned feature with a second rinse agent that is different from the first rinse agent, wherein the polymer has a solubility that is greater in the first rinse agent than in the second rinse agent. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a polymer comprising a surface attachment group for forming a bond with a surface of the patterned feature and a solvent, and wherein the pattern treatment composition is free of crosslinkers; (c) removing residual pattern treatment composition from the substrate with a first rinse agent, leaving a coating of the polymer over and bonded to the surface of the patterned feature; and (d) rinsing the polymer-coated patterned feature with a second rinse agent that is different from the first rinse agent, wherein the polymer has a solubility that is greater in the first rinse agent than in the second rinse agent. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

Abstract: A polymer includes repeat units, most of which are photoacid-generating repeat units. Each of the photoacid-generating repeat units includes photoacid-generating functionality and base-solubility-enhancing functionality. Each of the photoacid-generating repeat units comprises an anion and a photoacid-generating cation that collectively have structure (I) wherein q, r, R1, m, X, and Z? are defined herein. The polymer is useful as a component of a photoresist composition that further includes a second polymer that exhibits a change in solubility in an alkali developer under action of acid.

Abstract: A photoresist composition includes a first polymer in which at least half of the repeat units are photoacid-generating repeat units, and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid. In the first polymer, each of the photoacid-generating repeat units comprises photoacid-generating functionality and base-solubility-enhancing functionality.

Abstract: A photoresist composition includes a first polymer in which at least half of the repeat units are photoacid-generating repeat units, and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid. In the first polymer, each of the photoacid-generating repeat units comprises photoacid-generating functionality and base-solubility-enhancing functionality.

Abstract: A polymer includes repeat units, at least half of which are photoacid-generating repeat units. Each of the photoacid-generating repeat units includes photoacid-generating functionality and base-solubility-enhancing functionality. The polymer is useful as a component of a photoresist composition that further includes a second polymer that exhibits a change in solubility in an alkali developer under action of acid.

Abstract: A photoresist composition includes a first polymer in which at least half of the repeat units are photoacid-generating repeat units, and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid. In the first polymer, each of the photoacid-generating repeat units comprises photoacid-generating functionality and base-solubility-enhancing functionality.

Abstract: A polymer includes repeat units, at least half of which are photoacid-generating repeat units. Each of the photoacid-generating repeat units includes photoacid-generating functionality and base-solubility-enhancing functionality. The polymer is useful as a component of a photoresist composition that further includes a second polymer that exhibits a change in solubility in an alkali developer under action of acid.

Abstract: A polymer includes repeat units, most of which are photoacid-generating repeat units. Each of the photoacid-generating repeat units includes photoacid-generating functionality and base-solubility-enhancing functionality. Each of the photoacid-generating repeat units comprises an anion and a photoacid-generating cation that collectively have structure (I) wherein q, r, R1, m, X, and Z? are defined herein. The polymer is useful as a component of a photoresist composition that further includes a second polymer that exhibits a change in solubility in an alkali developer under action of acid.

Abstract: A polymer includes repeat units, at least half of which are photoacid-generating repeat units. Each of the photoacid-generating repeat units includes photoacid-generating functionality and base-solubility-enhancing functionality. The polymer is useful as a component of a photoresist composition that further includes a second polymer that exhibits a change in solubility in an alkali developer under action of acid.

Abstract: A photoresist composition includes a first polymer in which at least half of the repeat units are photoacid-generating repeat units, and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid. In the first polymer, each of the photoacid-generating repeat units comprises photoacid-generating functionality and base-solubility-enhancing functionality.

Abstract: A photoresist composition includes a first polymer in which at least half of the repeat units are photoacid-generating repeat units, and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid. In the first polymer, each of the photoacid-generating repeat units comprises photoacid-generating functionality and base-solubility-enhancing functionality.

Abstract: The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.

Abstract: The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.

Abstract: The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.