Abstract: Bonding interfaces between a die and a carrier wafer are described herein. Using a bonding layer between wafers that includes metal, a doped dielectric material, and/or a semiconductor material may reduce damage from processes such as dicing. In one example, dopants are introduced into a dielectric material before bonding. In another example, the bonding layer includes a semiconductor material. In one example, a conductive material including a metal is used as a bonding interface between wafers. In some examples, the metallic bonding material may be patterned. In some examples, a conductive material including metal may replace a dielectric material as a bonding material. In other examples, the bonding interface may include a layer of conductive material and a layer of a dielectric material or a semiconductor material.