Patents by Inventor Amyn Poonawala
Amyn Poonawala has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230375916Abstract: Techniques relating to synthesizing masks for use in manufacturing a semiconductor device are disclosed. These techniques include providing, by a processor, a design pattern for a semiconductor device as input to a trained machine learning (ML) model. The techniques further include performing, using the ML Model, a plurality of dilated convolutions relating to the design pattern, and inferring, using the ML model, one or more masks for use in manufacturing the semiconductor device, based on the plurality of dilated convolutions.Type: ApplicationFiled: July 31, 2023Publication date: November 23, 2023Inventors: Amyn A. POONAWALA, Jason Jiale SHU, Thomas Chrisptopher CECIL
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Patent number: 11762283Abstract: Techniques relating to synthesizing masks for use in manufacturing a semiconductor device are disclosed. A plurality of training masks, for a machine learning (ML) model, are generated by synthesizing one or more polygons, relating to a design pattern for the semiconductor device, using Inverse Lithography Technology (ILT) (106). The ML model is trained using both the plurality of training masks generated using ILT, and the design pattern for the semiconductor device, as inputs (108). The trained ML model is configured to synthesize one or more masks, for use in manufacturing the semiconductor device, based on the design pattern (110).Type: GrantFiled: November 23, 2020Date of Patent: September 19, 2023Assignee: Synopsys, Inc.Inventors: Amyn A. Poonawala, Jason Jiale Shu, Thomas Christopher Cecil
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Publication number: 20210181620Abstract: Techniques relating to synthesizing masks for use in manufacturing a semiconductor device are disclosed. A plurality of training masks, for a machine learning (ML) model, are generated by synthesizing one or more polygons, relating to a design pattern for the semiconductor device, using Inverse Lithography Technology (ILT) (106). The ML model is trained using both the plurality of training masks generated using ILT, and the design pattern for the semiconductor device, as inputs (108). The trained ML model is configured to synthesize one or more masks, for use in manufacturing the semiconductor device, based on the design pattern (110).Type: ApplicationFiled: November 23, 2020Publication date: June 17, 2021Inventors: Amyn A. POONAWALA, Jason Jiale SHU, Thomas Christopher CECIL
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Patent number: 8296688Abstract: One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout. Finally, the system generates assist features for the post-OPC mask layout based on the CCF field.Type: GrantFiled: April 26, 2011Date of Patent: October 23, 2012Assignee: Synopsys, Inc.Inventors: Levi D. Barnes, Benjamin D. Painter, Qiliang Yan, Yongfa Fan, Jianliang Li, Amyn Poonawala
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Patent number: 8010913Abstract: Some embodiments provide techniques and systems to identify locations in a target mask layout for placing assist features. During operation, an embodiment can determine a spatial sampling frequency to sample the target mask layout, wherein sampling the target mask layout at the spatial sampling frequency prevents spatial aliasing in a gradient of a cost function which is used for computing an inverse mask field. Next, the system can generate a grayscale image by sampling the target mask layout at the spatial sampling frequency. The system can then compute the inverse mask field by iteratively modifying the grayscale image. The system can use the gradient of the cost function to guide the iterative modification process. Next, the system can filter the inverse mask field using a morphological operator, and use the filtered inverse mask field to identify assist feature locations in the target mask layout.Type: GrantFiled: April 14, 2009Date of Patent: August 30, 2011Assignee: Synopsys, Inc.Inventors: Amyn A. Poonawala, Benjamin D. Painter, Levi D. Barnes
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Publication number: 20110202891Abstract: One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Note that the contours of the target patterns substantially coincide with the edges of set of the polygons. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout.Type: ApplicationFiled: April 26, 2011Publication date: August 18, 2011Applicant: SYNOPSYS, INC.Inventors: Levi D. Barnes, Benjamin D. Painter, Qiliang Yan, Yongfa Fan, Jianliang Li, Amyn Poonawala
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Patent number: 7954071Abstract: One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Note that the contours of the target patterns substantially coincide with the edges of set of the polygons. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout.Type: GrantFiled: October 31, 2008Date of Patent: May 31, 2011Assignee: Synopsys, Inc.Inventors: Levi D. Barnes, Benjamin D. Painter, Qiliang Yan, Yongfa Fan, Jianliang Li, Amyn Poonawala
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Publication number: 20100262946Abstract: Some embodiments provide techniques and systems to identify locations in a target mask layout for placing assist features. During operation, an embodiment can determine a spatial sampling frequency to sample the target mask layout, wherein sampling the target mask layout at the spatial sampling frequency prevents spatial aliasing in a gradient of a cost function which is used for computing an inverse mask field. Next, the system can generate a grayscale image by sampling the target mask layout at the spatial sampling frequency. The system can then compute the inverse mask field by iteratively modifying the grayscale image. The system can use the gradient of the cost function to guide the iterative modification process. Next, the system can filter the inverse mask field using a morphological operator, and use the filtered inverse mask field to identify assist feature locations in the target mask layout.Type: ApplicationFiled: April 14, 2009Publication date: October 14, 2010Applicant: SYNOPSYS, INC.Inventors: Amyn A. Poonawala, Benjaman D. Painter, Levi D. Barnes
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Publication number: 20100115486Abstract: One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Note that the contours of the target patterns substantially coincide with the edges of set of the polygons. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout.Type: ApplicationFiled: October 31, 2008Publication date: May 6, 2010Applicant: SYNOPSYS, INC.Inventors: Levi D. Barnes, Benjamin D. Painter, Qiliang Yang, Yongfa Fan, Jianliang Li, Amyn Poonawala